RGP10A-RGP10M
RGP10A - RGP10M
Features
•
•
•
•
•
1.0 ampere operation at T
A
= 55°C
with no thermal runaway.
High temperature metallurgically
bonded construction.
Glass passivated cavity-free junction.
Typical I
R
less than 1µA.
Fast switching for high efficiency.
DO-41
COLOR BAND DENOTES CATHODE
Fast Rectifiers (Glass Passivated)
Absolute Maximum Ratings*
Symbol
V
RRM
I
F(AV)
I
FSM
T
stg
T
J
T
A
= 25°C unless otherwise noted
Parameter
10A
Maximum Repetitive Reverse Voltage
Average Rectified Forward Current,
.375 " lead length @ T
L
= 55°C
Non-repetitive Peak Forward Surge Current
8.3 ms Single Half-Sine-Wave
Storage Temperature Range
Operating Junction Temperature
50
10B
100
10D
200
Value
10G
400
1.0
30
-65 to +175
-65 to +175
10J
600
10K
800
10M
1000
Units
V
A
A
°C
°C
*
These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
Thermal Characteristics
Symbol
P
D
R
θJA
Parameter
Power Dissipation
Thermal Resistance, Junction to Ambient
Value
3.0
50
Units
W
°C/W
Electrical Characteristics
Symbol
V
F
t
rr
I
R
C
T
T
A
= 25°C unless otherwise noted
Parameter
10A
Forward Voltage @ 1.0 A
Reverse Recovery Time
I
F
= 0.5 A, I
R
= 1.0 A, I
rr
= 0.25 A
Reverse Current @ rated V
R
T
A
= 25°C
T
A
= 150°C
Total Capacitance
V
R
= 4.0 V, f = 1.0 MHz
150
10B
10D
Device
10G
1.3
250
5.0
200
15
500
10J
10K
10M
Units
V
ns
µA
µA
pF
2001
Fairchild Semiconductor Corporation
RPG10A - RPG10M, Rev. C
RGP10A-RGP10M
Typical Characteristics
Average Rectified Forward Current, I
F
[A]
Peak Forward Surge Current, I
FSM
[A]
1
30
25
20
15
10
5
0
0.75
0.5
SINGLE PHASE
HALF WAVE
60HZ
RESISTIVE OR
INDUCTIVE LOAD
.375" (9.0mm) LEAD
LENGTHS
0.25
0
25
50
75
100
125
Lead Temperature [ºC]
150
175
1
2
5
10
20
Number of Cycles at 60Hz
50
100
Figure 1. Forward Current Derating Curve
10
Figure 2. Non-Repetitive Surge Current
10
T
A
= 125
º
C
Forward Current, I
F
[A]
1
Reverse Current, I
R
[mA]
1
T
A
= 75
º
C
0.1
T
A
= 25
º
C
Pulse Width = 300µs
µ
2% Duty Cycle
0.1
T
A
= 25
º
C
0.01
0.4
0.6
0.8
1
1.2
Forward Voltage, V
F
[V]
1.4
1.6
0.01
0
20
40
60
80
100
120
140
Percent of Rated Peak Reverse Voltage [%]
Figure 3. Forward Voltage Characteristics
100
Total Capacitance, C
T
[pF]
50
Figure 4. Reverse Current vs Reverse Voltage
20
10
5
2
1
1
2
5
10
20
Reverse Voltage, V
R
[V]
50
100
Figure 5. Total Capacitance
50Ω
NONINDUCTIVE
50Ω
NONINDUCTIVE
+0.5A
(-)
trr
DUT
50V
(approx)
50Ω
NONINDUCTIVE
Pulse
Generator
(Note 2)
(+)
OSCILLOSCOPE
(Note 1)
0
-0.25A
-1.0A
1.0cm
SET TIME BASE FOR
5/ 10 ns/ cm
Reverse Recovery Time Characterstic and Test Circuit Diagram
2001
Fairchild Semiconductor Corporation
RPG10A - RPG10M, Rev. C
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E
2
CMOS
TM
EnSigna
TM
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®
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®
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®
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with instructions for use provided in the labeling, can be
effectiveness.
reasonably expected to result in significant injury to the
user.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Advance Information
Product Status
Formative or
In Design
Definition
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
Preliminary
First Production
No Identification Needed
Full Production
Obsolete
Not In Production
This datasheet contains specifications on a product
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The datasheet is printed for reference information only.
Rev. H4
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