2SA1955
TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process)
2SA1955
General Purpose Amplifier Applications
Switching and Muting Switch Application
·
·
Low saturation voltage: V
CE (sat)
(1) =
−15
mV (typ.)
@I
C
=
−10
mA/I
B
=
−0.5
mA
Large collector current: I
C
=
−400
mA (max)
Unit: mm
Maximum Ratings
(Ta
=
25°C)
Characteristics
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Base current
Collector power dissipation
Junction temperature
Storage temperature range
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
B
P
C
T
j
T
stg
Rating
-15
-12
-5
-400
-50
100
125
-55~125
Unit
V
V
V
mA
mA
mW
°C
°C
JEDEC
JEITA
TOSHIBA
―
―
2-2H1A
Marking
Weight: 2.4 mg (typ.)
1
2003-03-27
2SA1955
Electrical Characteristics
(Ta
=
25°C)
Characteristics
Collector cut-off current
Emitter cut-off current
DC current gain
Symbol
I
CBO
I
EBO
h
FE
(Note)
V
CE (sat) (1)
V
CE (sat) (2)
V
BE (sat)
f
T
C
ob
R
on
t
on
Test Condition
V
CB
= -15
V, I
E
=
0
V
EB
= -5
V, I
C
=
0
V
CE
= -2
V, I
C
= -10
mA
I
C
= -10
mA, I
B
= -0.5
mA
I
C
= -200
mA, I
B
= -10
mA
I
C
= -200
mA, I
B
= -10
mA
V
CE
= -2
V, I
C
= -10
mA
V
CB
= -10
V, I
E
=
0, f
=
1 MHz
I
B
= -1
mA, V
in
= -1
V
rms
, f
=
1 kHz
Min
¾
¾
300
¾
¾
¾
80
¾
¾
¾
Typ.
¾
¾
¾
-15
-110
-0.87
130
4.2
0.9
40
Max
-0.1
-0.1
1000
-30
-250
-1.2
¾
¾
¾
¾
Unit
mA
mA
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
Collector output capacitance
Collector-emitter on resistance
Turn-on time
mV
V
MHz
pF
W
Switching time
Storage time
t
stg
¾
280
¾
ns
Fall time
t
f
I
B1
= -I
B2
=
5 mA
¾
45
¾
Note: h
FE
classification
A: 300~600, B: 500~1000
2
2003-03-27
2SA1955
RESTRICTIONS ON PRODUCT USE
000707EAA
·
TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor
devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical
stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of
safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of
such TOSHIBA products could cause loss of human life, bodily injury or damage to property.
In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as
set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and
conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability
Handbook” etc..
·
The TOSHIBA products listed in this document are intended for usage in general electronics applications
(computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances,
etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires
extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or
bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or
spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments,
medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this
document shall be made at the customer’s own risk.
·
The information contained herein is presented only as a guide for the applications of our products. No
responsibility is assumed by TOSHIBA CORPORATION for any infringements of intellectual property or other
rights of the third parties which may result from its use. No license is granted by implication or otherwise under
any intellectual property or other rights of TOSHIBA CORPORATION or others.
·
The information contained herein is subject to change without notice.
5
2003-03-27
Analog electronics
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