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2SD2440-GR

Description
TRANSISTOR 6 A, 60 V, NPN, Si, POWER TRANSISTOR, LEAD FREE, 2-16F1A, 3 PIN, BIP General Purpose Power
CategoryDiscrete semiconductor    The transistor   
File Size168KB,5 Pages
ManufacturerToshiba Semiconductor
Websitehttp://toshiba-semicon-storage.com/
Download Datasheet Parametric Compare View All

2SD2440-GR Overview

TRANSISTOR 6 A, 60 V, NPN, Si, POWER TRANSISTOR, LEAD FREE, 2-16F1A, 3 PIN, BIP General Purpose Power

2SD2440-GR Parametric

Parameter NameAttribute value
package instructionFLANGE MOUNT, R-PSFM-T3
Reach Compliance Codeunknow
ECCN codeEAR99
Maximum collector current (IC)6 A
Collector-emitter maximum voltage60 V
ConfigurationSINGLE
Minimum DC current gain (hFE)200
JESD-30 codeR-PSFM-T3
Number of components1
Number of terminals3
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Polarity/channel typeNPN
Maximum power consumption environment40 W
Maximum power dissipation(Abs)40 W
Certification statusNot Qualified
surface mountNO
Terminal formTHROUGH-HOLE
Terminal locationSINGLE
transistor applicationsSWITCHING
Transistor component materialsSILICON
Nominal transition frequency (fT)5 MHz
Maximum off time (toff)7000 ns
Maximum opening time (tons)2000 ns
VCEsat-Max1.2 V
Base Number Matches1
2SD2440
TOSHIBA Transistor Silicon NPN Triple Diffused Type
2SD2440
Switching Application
Unit: mm
High breakdown voltage: V
CBO
= 100 V
: V
EBO
= 18 V
Low saturation voltage: V
CE (sat)
= 1.2 V (max) (I
C
= 5 A, I
B
= 1 A)
High speed: t
f
= 1 µs (typ.) (I
C
= 5 A, I
B
= ±0.5 A)
High DC current gain: h
FE
= 200 (min) (V
CE
= 5 V, I
C
= 0.5 A)
Maximum Ratings
(Ta = 25°C)
Characteristics
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Base current
Collector power dissipation
(Tc = 25°C)
Junction temperature
Storage temperature range
DC
Pulse
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
CP
I
B
P
C
T
j
T
stg
Rating
100
60
18
6
12
2
40
150
−55
to 150
Unit
V
V
V
A
A
W
°C
°C
JEDEC
JEITA
TOSHIBA
2-16F1A
Weight: 5.8 g (typ.)
1
2004-07-07

2SD2440-GR Related Products

2SD2440-GR 2SD2440-BL 2SD2440-V
Description TRANSISTOR 6 A, 60 V, NPN, Si, POWER TRANSISTOR, LEAD FREE, 2-16F1A, 3 PIN, BIP General Purpose Power TRANSISTOR 6 A, 60 V, NPN, Si, POWER TRANSISTOR, LEAD FREE, 2-16F1A, 3 PIN, BIP General Purpose Power TRANSISTOR 6 A, 60 V, NPN, Si, POWER TRANSISTOR, LEAD FREE, 2-16F1A, 3 PIN, BIP General Purpose Power
package instruction FLANGE MOUNT, R-PSFM-T3 FLANGE MOUNT, R-PSFM-T3 FLANGE MOUNT, R-PSFM-T3
Reach Compliance Code unknow unknow unknow
ECCN code EAR99 EAR99 EAR99
Maximum collector current (IC) 6 A 6 A 6 A
Collector-emitter maximum voltage 60 V 60 V 60 V
Configuration SINGLE SINGLE SINGLE
Minimum DC current gain (hFE) 200 300 450
JESD-30 code R-PSFM-T3 R-PSFM-T3 R-PSFM-T3
Number of components 1 1 1
Number of terminals 3 3 3
Maximum operating temperature 150 °C 150 °C 150 °C
Package body material PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR RECTANGULAR RECTANGULAR
Package form FLANGE MOUNT FLANGE MOUNT FLANGE MOUNT
Polarity/channel type NPN NPN NPN
Maximum power consumption environment 40 W 40 W 40 W
Maximum power dissipation(Abs) 40 W 40 W 40 W
Certification status Not Qualified Not Qualified Not Qualified
surface mount NO NO NO
Terminal form THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE
Terminal location SINGLE SINGLE SINGLE
transistor applications SWITCHING SWITCHING SWITCHING
Transistor component materials SILICON SILICON SILICON
Nominal transition frequency (fT) 5 MHz 5 MHz 5 MHz
Maximum off time (toff) 7000 ns 7000 ns 7000 ns
Maximum opening time (tons) 2000 ns 2000 ns 2000 ns
VCEsat-Max 1.2 V 1.2 V 1.2 V
Base Number Matches 1 1 1
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