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Datasheet> All Categories > LED optoelectronic/LED> photoelectric> TSHF5400-ASZ
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TSHF5400-ASZ

Description
Infrared LED, 870nm
CategoryLED optoelectronic/LED    photoelectric   
File Size120KB，5 Pages
ManufacturerVishay
Websitehttp://www.vishay.com
Environmental Compliance
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TSHF5400-ASZ Overview

Infrared LED, 870nm

TSHF5400-ASZ Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerVishay
Reach Compliance Codeunknown
Maximum forward current0.1 A
Maximum forward voltage3 V
JESD-609 codee2
Installation featuresTHROUGH HOLE MOUNT
Maximum operating temperature100 °C
Minimum operating temperature-40 °C
peak wavelength870 nm
Maximum reverse voltage5 V
Semiconductor materialGaAlAs
Spectral bandwidth4e-8 m
surface mountNO
Terminal surfaceTin/Silver (Sn/Ag)
perspective44 deg

TSHF5400-ASZ Preview

TSHF5400
Vishay Semiconductors
High Speed Infrared Emitting Diode, 870 nm, GaAlAs Double
Hetero
Description
TSHF5400 is a high speed infrared emitting diode in
GaAlAs on GaAlAs double hetero (DH) technology,
molded on copper frame, in a clear, untinted plastic
package.
The new technology combines the high speed of DH-
GaAlAs with the efficiency of standard GaAlAs and
the low forward voltage of the standard GaAs technol-
ogy.
94 8390
Features
• High modulation bandwidth (10 MHz)
•
•
•
•
•
•
•
•
•
•
Extra high radiant power and radiant intensity
Low forward voltage
Suitable for high pulse current operation
Standard T-1¾ (∅ 5 mm) package
Angle of half intensity
ϕ
= ± 22°
Peak wavelength
λ
p
= 870 nm
High reliability
Good spectral matching to Si photodetectors
Lead-free component
Component in accordance to RoHS 2002/95/EC
and WEEE 2002/96/EC
Applications
Infrared high speed remote control and free air data
transmission systems with high modulation frequen-
cies or high data transmission rate requirements.
TSHF5400 is ideal for the design of transmission sys-
tems according to IrDA requirements and for carrier
frequency based systems (e.g. ASK / FSK - coded,
450 kHz or 1.3 MHz).
Absolute Maximum Ratings
T
amb
= 25 °C, unless otherwise specified
Parameter
Reverse Voltage
Forward current
Peak Forward Current
Surge Forward Current
Power Dissipation
Junction Temperature
Operating Temperature Range
Storage Temperature Range
Soldering Temperature
Thermal Resistance Junction/
Ambient
t
≤
5 sec, 2 mm from case
t
p
/T = 0.5, t
p
= 100
µs
t
p
= 100
µs
Test condition
Symbol
V
R
I
F
I
FM
I
FSM
P
V
T
j
T
amb
T
stg
T
sd
R
thJA
Value
5
100
200
1.5
160
100
- 40 to + 100
- 40 to + 100
260
270
Unit
V
mA
mA
A
mW
°C
°C
°C
°C
K/W
Document Number 81024
Rev. 2.1, 08-Mar-05
www.vishay.com
1
TSHF5400
Vishay Semiconductors
Basic Characteristics
T
amb
= 25 °C, unless otherwise specified
Parameter
Forward Voltage
Temp. Coefficient of V
F
Reverse Current
Junction capacitance
Radiant Intensity
Radiant Power
Temp. Coefficient of
φ
e
Angle of Half Intensity
Peak Wavelength
Spectral Bandwidth
Temp. Coefficient of
λ
p
Rise Time
Fall Time
Virtual Source Diameter
I
F
= 100 mA
I
F
= 100 mA
I
F
= 100 mA
I
F
= 100 mA
I
F
= 100 mA
method: 63 % encircled energy
Test condition
I
F
= 100 mA, t
p
= 20 ms
I
F
= 1 A, t
p
= 100
µs
I
F
= 100 mA
V
R
= 5 V
V
R
= 0 V, f = 1 MHz, E = 0
I
F
= 100 mA, t
p
= 20 ms
I
F
= 1 A, t
p
= 100
µs
I
F
= 100 mA, t
p
= 20 ms
I
F
= 100 mA
Symbol
V
F
V
F
TK
VF
I
R
C
j
I
e
I
e
φ
e
TKφ
e
ϕ
λ
p
∆λ
TKλ
p
t
r
t
f
∅
25
160
40
400
35
- 0.7
± 22
870
40
0.2
30
30
2.1
125
Min
Typ.
1.35
2.4
- 1.7
10
Max
1.6
3.0
VISHAY
Unit
V
V
mV/K
µA
pF
mW/sr
mW/sr
mW
%/K
deg
nm
nm
nm/K
ns
ns
mm
Typical Characteristics (Tamb = 25
°C
unless otherwise specified)
180
P – Power Dissipation ( mW)
V
I
F
– Forward Current ( mA)
120
100
80
60
40
20
0
0
10 20 30 40 50 60 70 80 90 100
T
amb
– Ambient T
emperature (°C )
16085
160
140
120
100
80
60
40
20
0
0
10 20 30 40 50 60 70 80 90 100
T
amb
– Ambient T
emperature (°C )
16084
Figure 1. Power Dissipation vs. Ambient Temperature
Figure 2. Forward Current vs. Ambient Temperature
www.vishay.com
2
Document Number 81024
Rev. 2.1, 08-Mar-05
VISHAY
TSHF5400
Vishay Semiconductors
I
F
-Forward Current ( mA )
0.02
0.05
0.1
I
e
– Radiant Intensity ( mW/sr )
1000
t
p
/ T= 0.01
T
amb
<
50°
1000
100
10
0.2
0.5
1
100
0.01
16031
0.1
0.1
1.0
10
100
16961
10
0
t
p
- Pulse Duration ( ms )
10
1
10
2
10
3
I
F
– Forward Current ( mA )
10
4
Figure 3. Pulse Forward Current vs. Pulse Duration
Figure 6. Radiant Intensity vs. Forward Current
10
4
I
F
- Forward Current ( mA)
Φ
e
-
Radiant
Power
( mW )
1000
10
3
100
10
2
10
10
1
1
10
0
0
94 8880
1
2
3
4
0.1
10
0
94
8007
V
F
- Forward Voltage ( V )
10
1
10
2
10
3
I
F
-
Forward Current ( mA )
10
4
Figure 4. Forward Current vs. Forward Voltage
Figure 7. Radiant Power vs. Forward Current
1.2
V
Frel
- Relative Forward Voltage
1.6
1.1
I
e rel
/
Φ
e rel
1.2
I
F
= 10 mA
1.0
0.9
0.8
0.4
0.8
0.7
0
20
40
60
80
100
94 8882
0
–10 0 10
50
100
140
94 7990
T
amb
- Ambient Temperature (
°
C )
T
amb
– Ambient T
emperature (°C )
Figure 5. Relative Forward Voltage vs. Ambient Temperature
Figure 8. Rel. Radiant Intensity/Power vs. Ambient Temperature
Document Number 81024
Rev. 2.1, 08-Mar-05
www.vishay.com
3
TSHF5400
Vishay Semiconductors
0
°
I
e rel
- Relative Radiant Intensity
VISHAY
1.25
Φ
e, rel
- Relative Radiant Power
10
°
20
°
30°
1.0
40°
1.0
0.9
0.8
0.7
50°
60°
70°
80°
0.6
0.4
0.2
0
0.2
0.4
0.6
0.75
0.5
0.25
0
780
880
λ
–
Wavelength ( nm )
980
94 8883
95 9886
Figure 9. Relative Radiant Power vs. Wavelength
Figure 10. Relative Radiant Intensity vs. Angular Displacement
Package Dimensions in mm
95 1
1260
www.vishay.com
4
Document Number 81024
Rev. 2.1, 08-Mar-05
VISHAY
Ozone Depleting Substances Policy Statement
It is the policy of Vishay Semiconductor GmbH to
1. Meet all present and future national and international statutory requirements.
TSHF5400
Vishay Semiconductors
2. Regularly and continuously improve the performance of our products, processes, distribution and
operatingsystems with respect to their impact on the health and safety of our employees and the public, as
well as their impact on the environment.
It is particular concern to control or eliminate releases of those substances into the atmosphere which are
known as ozone depleting substances (ODSs).
The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs
and forbid their use within the next ten years. Various national and international initiatives are pressing for an
earlier ban on these substances.
Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use
of ODSs listed in the following documents.
1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments
respectively
2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental
Protection Agency (EPA) in the USA
3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively.
Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting
substances and do not contain such substances.
We reserve the right to make changes to improve technical design
and may do so without further notice.
Parameters can vary in different applications. All operating parameters must be validated for each
customer application by the customer. Should the buyer use Vishay Semiconductors products for any
unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all
claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal
damage, injury or death associated with such unintended or unauthorized use.
Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany
Telephone: 49 (0)7131 67 2831, Fax number: 49 (0)7131 67 2423
Document Number 81024
Rev. 2.1, 08-Mar-05
www.vishay.com
5
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TSHF5400-ASZ Related Products

TSHF5400-ASZ TSHF5400-AS12
Description Infrared LED, 870nm Infrared LED, 870nm
Is it Rohs certified? conform to conform to
Maker Vishay Vishay
Reach Compliance Code unknown unknown
Maximum forward current 0.1 A 0.1 A
Maximum forward voltage 3 V 3 V
JESD-609 code e2 e2
Installation features THROUGH HOLE MOUNT THROUGH HOLE MOUNT
Maximum operating temperature 100 °C 100 °C
Minimum operating temperature -40 °C -40 °C
peak wavelength 870 nm 870 nm
Maximum reverse voltage 5 V 5 V
Semiconductor material GaAlAs GaAlAs
Spectral bandwidth 4e-8 m 4e-8 m
surface mount NO NO
Terminal surface Tin/Silver (Sn/Ag) Tin/Silver (Sn/Ag)
perspective 44 deg 44 deg

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