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JANTX1N3032UR

Description
Zener Diode, 33V V(Z), 1W, Silicon, Unidirectional, DO-213AB, DO-213AB, 2 PIN
CategoryDiscrete semiconductor    diode   
File Size989KB,18 Pages
ManufacturerCompensated Devices Inc.
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JANTX1N3032UR Overview

Zener Diode, 33V V(Z), 1W, Silicon, Unidirectional, DO-213AB, DO-213AB, 2 PIN

JANTX1N3032UR Parametric

Parameter NameAttribute value
MakerCompensated Devices Inc.
package instructionO-LELF-R2
Reach Compliance Codeunknown
Other featuresMETALLURGICALLY BONDED
Shell connectionISOLATED
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeZENER DIODE
JEDEC-95 codeDO-213AB
JESD-30 codeO-LELF-R2
Number of components1
Number of terminals2
Package body materialGLASS
Package shapeROUND
Package formLONG FORM
polarityUNIDIRECTIONAL
Maximum power dissipation1 W
Certification statusNot Qualified
GuidelineMIL-19500/115K
Nominal reference voltage33 V
surface mountYES
technologyZENER
Terminal formWRAP AROUND
Terminal locationEND
Working test current7.5 mA
The documentation and process conversion
measures necessary to comply with this revision
shall be completed by 16 November 2004.
INCH-POUND
MIL-PRF-19500/115K
16 August 2004
SUPERSEDING
MIL-PRF-19500/115J
10 October 1997
PERFORMANCE SPECIFICATION SHEET
SEMICONDUCTOR DEVICE, DIODE, SILICON, VOLTAGE REGULATOR, TYPES
1N3821A THROUGH 1N3828A, 1N3016B THROUGH 1N3051B,
1N3821A-1 THROUGH 1N3828A-1, 1N3016B-1 THROUGH 1N3051B-1,
1N3821AUR-1 THROUGH 1N3828AUR-1, 1N3016BUR-1 THROUGH 1N3051BUR-1,
PLUS C- AND D- TOLERANCE SUFFIX,
JAN, JANTX, JANTXV, AND JANHC
This specification is approved for use by all Departments
and Agencies of the Department of Defense.
*
1. SCOPE
1.1 Scope. This specification covers the performance requirements for 1 W, silicon, voltage regulator diodes with
voltage tolerances of 5 percent, 2 percent, and 1 percent. Three levels of product assurance are provided for each
device type as specified in MIL-PRF-19500. One level of product assurance is provided for die.
1.2 Physical dimensions. See figures 1 (DO-13), 2 (DO-41), 3 (DO-213AB), 4, and 5 (for JANHC).
* 1.3 Maximum ratings. Maximum ratings are as shown in maximum test ratings (see 3.8) herein and as follows:
-55°C
Top
+175°C; -55°C
TSTG
+175°C.
Type
DO-13, DO-41
DO-213AB
PT
W
1.0 (1)
1.0 (2)
TL
°C
+95
TEC
°C
+125
The requirements for acquiring the product described herein shall consist of
this specification sheet and MIL-PRF-19500.
(1) L = .375 inch (9.53 mm). Both ends of case or diode body to heat sink at L = .375 (9.53 mm). (Derate IZ to
0.0 mA dc at TL = +175°C).
(2) Derate to 0 at TEC = +175°C.
* 1.4 Primary electrical characteristics. Primary electrical characteristic are as shown in primary test ratings (see
3.8) herein and as follows: 3.3 V dc≤ Vz
200 V dc. A and B suffix devices are 5 percent voltage tolerance. C suffix
devices are 2 percent voltage tolerance. D suffix devices are 1 percent voltage tolerance.
Type
DO-13
DO-41
DO-213AB
R
θJL
(1)
°C/W
80
50
R
θJEC
(2)
°C/W
50
(1) L = .375 inch (9.53 mm).
(2) Junction to end-caps.
* Comments, suggestions, or questions on this document should be addressed to Defense Supply Center, Columbus,
ATTN: DSCC-VAC, P.O. Box 3990, Columbus, OH 43218-3990, or emailed to
Semiconductor@dscc.dla.mil.
Since
contact information can change, you may want to verify the currency of this address information using the ASSIST
Online database at
http://www.dodssp.daps.mil.
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