UNISONIC TECHNOLOGIES CO., LTD
Preliminary
3N40K-MK
3A, 400V N-CHANNEL
POWER MOSFET
DESCRIPTION
The UTC
3N40K-MK
is an N-channel mode power
MOSFET using UTC’s advanced technology to provide
customers with planar stripe and DMOS technology. This
technology specializes in allowing a minimum on-state
resistance and superior switching performance. It also can
withstand high energy pulse in the avalanche and
commutation mode.
The UTC
3N40K-MK
is universally applied in electronic
lamp ballast based on half bridge topology and high efficient
switched mode power supply.
Power MOSFET
FEATURES
* R
DS(ON)
< 2.0Ω @ V
GS
=10V
* High switching speed
* 100% avalanche tested
SYMBOL
ORDERING INFORMATION
Package
TO-220F
TO-220F1
TO-220F2
TO-220F3
TO-251
TO-251S
TO-252
TO-252D
Pin Assignment
1
2
3
G
D
S
G
D
S
G
D
S
G
D
S
G
D
S
G
D
S
G
D
S
G
D
S
Packing
Tube
Tube
Tube
Tube
Tube
Tube
Tape Reel
Tape Reel
Ordering Number
Lead Free
Halogen Free
3N40KL-TF3-T
3N40KG-TF3-T
3N40KL-TF1-T
3N40KG-TF1-T
3N40KL-TF2-T
3N40KG-TF2-T
3N40KL-TF3T-T
3N40KG-TF3T-T
3N40KL-TM3-T
3N40KG-TM3-T
3N40KL-TMS-T
3N40KG-TMS-T
3N40KL-TN3-R
3N40KG-TN3-R
3N40KL-TND-R
3N40KG-TND-R
Note: Pin Assignment: G: Gate
D: Drain
S: Source
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QW-R205-033.a
3N40K-MK
MARKING
Preliminary
Power MOSFET
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QW-R205-033.a
3N40K-MK
Preliminary
Power MOSFET
ABSOLUTE MAXIMUM RATINGS
(T
C
=25°C, unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
Drain-Source Voltage
V
DSS
400
V
Gate-Source Voltage
V
GSS
±30
V
Continuous (T
C
=25°C)
I
D
3
A
Drain Current
Pulsed (Note 2)
I
DM
12
A
Avalanche Energy
Single Pulsed (Note 3)
E
AS
160
mJ
TO-220F/TO-220F1
25
W
TO-220F3
Power Dissipation
TO-220F2
P
D
26
W
TO-251/TO-251S
50
W
TO-252/TO-252D
Junction Temperature
T
J
+150
°C
Storage Temperature
T
STG
-55~+150
°C
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Repetitive Rating: Pulse width limited by maximum junction temperature.
3. L=35.6 mH, I
AS
=3.0 A, V
DD
=50V, R
G
=25
Ω,
Starting T
J
= 25°C
4. I
SD
≤4.4A,
di/dt
≤200A/μs,
V
DD
≤BV
DSS
, Starting T
J
= 25°C
THERMAL DATA
SYMBOL
θ
JA
110
4.9
θ
JC
4.8
2.5
°C/W
°C/W
°C/W
°C/W
RATINGS
62.5
UNIT
°C/W
PARAMETER
TO-220F/TO-220F1/
TO-220F2/TO-220F3
Junction to Ambient
TO-251/TO-251S
TO-252/TO-252D
TO-220F/TO-220F1
TO-220F3
Junction to Case
TO-220F2
TO-251/TO-251S
TO-252/TO-252D
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QW-R205-033.a
3N40K-MK
Preliminary
Power MOSFET
ELECTRICAL CHARACTERISTICS
(T
C
=25°C, unless otherwise specified)
MIN TYP MAX UNIT
400
V
0.38
V/°C
10
µA
+100 nA
-100 nA
5.0
2.0
530
300
60
V
Ω
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
A
A
V
PARAMETER
SYMBOL
TEST CONDITIONS
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BV
DSS
I
D
=250µA, V
GS
=0V
Breakdown Voltage Temperature Coefficient
△
BV
DSS
/
△
T
J
Reference to 25°C, I
D
=250µA
Drain-Source Leakage Current
I
DSS
V
DS
=400V, V
GS
=0V
Forward
V
GS
=+30V, V
DS
=0V
Gate- Source Leakage Current
I
GSS
Reverse
V
GS
=-30V, V
DS
=0V
ON CHARACTERISTICS
Gate Threshold Voltage
V
GS(TH)
V
DS
=V
GS
, I
D
=250µA
Static Drain-Source On-State Resistance
R
DS(ON)
V
GS
=10V, I
D
=1.5A
DYNAMIC PARAMETERS
Input Capacitance
C
ISS
V
GS
=0V, V
DS
=25V, f=1.0MHz
Output Capacitance
C
OSS
Reverse Transfer Capacitance
C
RSS
SWITCHING PARAMETERS
Turn-ON Delay Time
t
D(ON)
Rise Time
t
R
V
DS
=30V, I
D
=0.5A, R
G
=25Ω
(Note 1, 2)
Turn-OFF Delay Time
t
D(OFF)
Fall-Time
t
F
Total Gate Charge
Q
G
V
GS
=10V, V
DS
=50V, I
D
=1.3A
Gate to Source Charge
Q
GS
(Note 1, 2)
Gate to Drain Charge
Q
GD
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Maximum Body-Diode Continuous Current
I
SD
Maximum Body-Diode Pulsed Current
I
SM
Drain-Source Diode Forward Voltage
V
SD
I
S
=3A, V
GS
=0V
Notes: 1. Pulse Test: Pulse width
≤
300µs, Duty cycle
≤
2%
2. Essentially independent of operating temperature
3.0
420
420
270
42
40
60
25
35
100 130
28
45
14.6 18
4.4
1.75
3.0
12
1.5
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QW-R205-033.a
3N40K-MK
TEST CIRCUITS AND WAVEFORMS
+
D.U.T.
Preliminary
Power MOSFET
V
DS
-
+
-
L
R
G
Driver
V
GS
Same Type
as D.U.T.
* dv/dt controlled by R
G
* I
SD
controlled by pulse period
* D.U.T.-Device Under Test
V
DD
Peak Diode Recovery dv/dt Test Circuit
V
GS
(Driver)
Period
P.W.
P. W.
Period
D=
V
GS
= 10V
I
FM
, Body Diode Forward Current
I
SD
(D.U.T.)
I
RM
Body Diode Reverse Current
di/dt
Body Diode Recovery dv/dt
V
DS
(D.U.T.)
V
DD
Body Diode
Forward Voltage Drop
Peak Diode Recovery dv/dt Waveforms
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www.unisonic.com.tw
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QW-R205-033.a
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