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CP316V-2N5551-WS

Description
Transistor
CategoryDiscrete semiconductor    The transistor   
File Size233KB,2 Pages
ManufacturerCentral Semiconductor
Download Datasheet Parametric View All

CP316V-2N5551-WS Overview

Transistor

CP316V-2N5551-WS Parametric

Parameter NameAttribute value
MakerCentral Semiconductor
package instruction,
Reach Compliance Codecompliant

CP316V-2N5551-WS Preview

PROCESS
CP316V
Small Signal Transistors
NPN - High Voltage Transistor Chip
PROCESS DETAILS
Process
Die Size
Die Thickness
Base Bonding Pad Area
Emitter Bonding Pad Area
Top Side Metalization
Back Side Metalization
GEOMETRY
GROSS DIE PER 4 INCH WAFER
29,659
PRINCIPAL DEVICE TYPES
CMPT5551
CXT5551
CZT5551
2N5551
EPITAXIAL PLANAR
20 x 20 MILS
7.1 MILS
4.0 x 4.0 MILS
4.7 x 4.7 MILS
Al - 30,000Å
Au - 18,000Å
BACKSIDE COLLECTOR
145 Adams Avenue
Hauppauge, NY 11788 USA
Tel: (631) 435-1110
Fax: (631) 435-1824
www.centralsemi.com
R1 (8-October 2008)
PROCESS
CP316V
Typical Electrical Characteristics
145 Adams Avenue
Hauppauge, NY 11788 USA
Tel: (631) 435-1110
Fax: (631) 435-1824
www.centralsemi.com
R1 (8-October 2008)
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