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K6L1008U2C-TD85

Description
Standard SRAM, 128KX8, 85ns, CMOS, PDSO32, 8 X 20 MM, TSOP1-32
Categorystorage    storage   
File Size211KB,11 Pages
ManufacturerSAMSUNG
Websitehttp://www.samsung.com/Products/Semiconductor/
Download Datasheet Parametric View All

K6L1008U2C-TD85 Overview

Standard SRAM, 128KX8, 85ns, CMOS, PDSO32, 8 X 20 MM, TSOP1-32

K6L1008U2C-TD85 Parametric

Parameter NameAttribute value
Is it lead-free?Contains lead
Is it Rohs certified?incompatible
MakerSAMSUNG
Parts packaging codeTSOP1
package instructionTSOP1, TSSOP32,.8,20
Contacts32
Reach Compliance Codecompliant
ECCN codeEAR99
Maximum access time85 ns
I/O typeCOMMON
JESD-30 codeR-PDSO-G32
JESD-609 codee0
length18.4 mm
memory density1048576 bit
Memory IC TypeSTANDARD SRAM
memory width8
Number of functions1
Number of terminals32
word count131072 words
character code128000
Operating modeASYNCHRONOUS
Maximum operating temperature85 °C
Minimum operating temperature-25 °C
organize128KX8
Output characteristics3-STATE
Package body materialPLASTIC/EPOXY
encapsulated codeTSOP1
Encapsulate equivalent codeTSSOP32,.8,20
Package shapeRECTANGULAR
Package formSMALL OUTLINE, THIN PROFILE
Parallel/SerialPARALLEL
Peak Reflow Temperature (Celsius)NOT SPECIFIED
power supply3 V
Certification statusNot Qualified
Maximum seat height1.2 mm
Minimum standby current2 V
Maximum slew rate0.035 mA
Maximum supply voltage (Vsup)3.3 V
Minimum supply voltage (Vsup)2.7 V
Nominal supply voltage (Vsup)3 V
surface mountYES
technologyCMOS
Temperature levelOTHER
Terminal surfaceTin/Lead (Sn/Pb)
Terminal formGULL WING
Terminal pitch0.5 mm
Terminal locationDUAL
Maximum time at peak reflow temperatureNOT SPECIFIED
width8 mm
K6L1008V2C, K6L1008U2C Family
Document Title
128K x8 bit Low Power and Low Voltage CMOS Static RAM
CMOS SRAM
Revision History
Revision No. History
0.0
1.0
Initial draft
Finalize
- Increased I
SB
, I
DR
Commercial part = 10µA
Industrial part = 20µ
A
Revise
- Change speed bin
KM68V1000C Family: 70/85ns
70/100ns
KM68U1000C Family: 70/100ns
85/100ns
- Improved operating current: 40mA
35mA
- Improved power dissipation
P
D
: 0.7W
1.0W
- Improved standby current
Extended/Industrial: 20
10µ
A
- VIL: 0.4V
0.6V
Draft Data
July 3, 1996
December 16, 1996
Remark
Preliminary
Final
2.0
November 25, 1997
Final
The attached datasheets are provided by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserves the right to change the specifications and
products. SAMSUNG Electronics will answer to your questions about device. If you have any questions, please contact the SAMSUNG branch offices.
1
Revision 2.0
November 1997
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