K4S560832N-LL750 datasheet, PDF

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K4S560832N-LL750: DescriptionSynchronous DRAM, 32MX8, 5.4ns, CMOS, PDSO54, 0.400 X 0.875 INCH, 0.80 MM PITCH, HALOGEN FREE AND ROHS COMPLIANT, TSOP2-54; Categorystorage storage; File Size434KB，18 Pages; ManufacturerSAMSUNG; Websitehttp://www.samsung.com/Products/Semiconductor/; Environmental Compliance

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K4S560832N-LL750 Overview

Synchronous DRAM, 32MX8, 5.4ns, CMOS, PDSO54, 0.400 X 0.875 INCH, 0.80 MM PITCH, HALOGEN FREE AND ROHS COMPLIANT, TSOP2-54

K4S560832N-LL750 Parametric

Parameter Name	Attribute value
Is it lead-free?	Lead free
Is it Rohs certified?	conform to
Maker	SAMSUNG
Parts packaging code	TSOP2
package instruction	TSOP2, TSOP54,.46,32
Contacts	54
Reach Compliance Code	compliant
ECCN code	EAR99
access mode	FOUR BANK PAGE BURST
Maximum access time	5.4 ns
Other features	AUTO/SELF REFRESH
Maximum clock frequency (fCLK)	133 MHz
I/O type	COMMON
interleaved burst length	1,2,4,8
JESD-30 code	R-PDSO-G54
length	22.22 mm
memory density	268435456 bit
Memory IC Type	SYNCHRONOUS DRAM
memory width	8
Number of functions	1
Number of ports	1
Number of terminals	54
word count	33554432 words
character code	32000000
Operating mode	SYNCHRONOUS
Maximum operating temperature	70 °C
Minimum operating temperature
organize	32MX8
Output characteristics	3-STATE
Package body material	PLASTIC/EPOXY
encapsulated code	TSOP2
Encapsulate equivalent code	TSOP54,.46,32
Package shape	RECTANGULAR
Package form	SMALL OUTLINE, THIN PROFILE
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
power supply	3.3 V
Certification status	Not Qualified
refresh cycle	8192
Maximum seat height	1.2 mm
self refresh	YES
Continuous burst length	1,2,4,8,FP
Maximum standby current	0.002 A
Maximum slew rate	0.04 mA
Maximum supply voltage (Vsup)	3.6 V
Minimum supply voltage (Vsup)	3 V
Nominal supply voltage (Vsup)	3.3 V
surface mount	YES
technology	CMOS
Temperature level	COMMERCIAL
Terminal form	GULL WING
Terminal pitch	0.8 mm
Terminal location	DUAL
Maximum time at peak reflow temperature	NOT SPECIFIED
width	10.16 mm

K4S560832N-LL750 Preview

Rev. 1.0, Apr. 2010

K4S560432N

K4S560832N

K4S561632N

54TSOP(II) with Lead-Free & Halogen-Free

(RoHS compliant)

256Mb N-die SDRAM

datasheet

SAMSUNG ELECTRONICS RESERVES THE RIGHT TO CHANGE PRODUCTS, INFORMATION AND

SPECIFICATIONS WITHOUT NOTICE.

Products and specifications discussed herein are for reference purposes only. All information discussed

herein is provided on an "AS IS" basis, without warranties of any kind.

This document and all information discussed herein remain the sole and exclusive property of Samsung

Electronics. No license of any patent, copyright, mask work, trademark or any other intellectual property

right is granted by one party to the other party under this document, by implication, estoppel or other-

wise.

Samsung products are not intended for use in life support, critical care, medical, safety equipment, or

similar applications where product failure could result in loss of life or personal or physical harm, or any

military or defense application, or any governmental procurement to which special terms or provisions

may apply.

For updates or additional information about Samsung products, contact your nearest Samsung office.

All brand names, trademarks and registered trademarks belong to their respective owners.

ⓒ

-1-

K4S560432N

K4S560832N

K4S561632N

datasheet

History

- First Spec. Release

Draft Date

Apr. 2010

Remark

Rev. 1.0

SDRAM

Revision History

Revision No.

1.0

Editor

S.H.Kim

-2-

K4S560432N

K4S560832N

K4S561632N

datasheet

Rev. 1.0

SDRAM

Table Of Contents

256Mb N-die SDRAM

1. KEY FEATURES........................................................................................................................................................... 4

2. GENERAL DESCRIPTION ........................................................................................................................................... 4

3. ORDERING INFORMATION ........................................................................................................................................ 4

4. PACKAGE PHYSICAL DIMENSION ............................................................................................................................ 5

5. FUNCTIONAL BLOCK DIAGRAM ................................................................................................................................ 6

6. PIN CONFIGURATION (TOP VIEW) ............................................................................................................................ 7

7. INPUT/OUTPUT FUNCTION DESCRIPTION .............................................................................................................. 7

8. ABSOLUTE MAXIMUM RATINGS ............................................................................................................................... 8

9. DC OPERATING CONDITIONS ................................................................................................................................... 8

10. CAPACITANCE .......................................................................................................................................................... 8

11. DC CHARACTERISTICS (x4/x8) ................................................................................................................................ 9

12. DC CHARACTERISTICS (x16)................................................................................................................................... 10

13. AC OPERATING TEST CONDITIONS ....................................................................................................................... 11

14. OPERATING AC PARAMETER ................................................................................................................................. 12

15. AC CHARACTERISTICS ............................................................................................................................................ 13

16. DQ BUFFER OUTPUT DRIVE CHARACTERISTICS................................................................................................. 13

17. IBIS SPECIFICATION................................................................................................................................................. 14

18. SIMPLIFIED TRUTH TABLE ...................................................................................................................................... 18

-3-

K4S560432N

K4S560832N

K4S561632N

datasheet

Rev. 1.0

SDRAM

1. KEY FEATURES

• JEDEC standard 3.3V power supply

• LVTTL compatible with multiplexed address

• Four banks operation

• MRS cycle with address key programs

-. CAS latency (2 & 3)

-. Burst length (1, 2, 4, 8 & Full page)

-. Burst type (Sequential & Interleave)

• All inputs are sampled at the positive going edge of the system clock.

• Burst read single-bit write operation

• DQM (x4,x8) & L(U)DQM (x16) for masking

• Auto & self refresh

• 64ms refresh period (8K Cycle)

• Lead-Free & Halogen-Free Package

• RoHS compliant

2. GENERAL DESCRIPTION

The K4S560432N / K4S560832N / K4S561632N is 268,435,456 bits synchronous high data rate Dynamic RAM organized as 4 x 16,777,216 words by 4

bits / 4 x 8,388,608 words by 8bits / 4 x 4,194,304 words by 16bits, fabricated with SAMSUNG's high performance CMOS technology. Synchronous

design allows precise cycle control with the use of system clock I/O transactions are possible on every clock cycle. Range of operating frequencies, pro-

grammable burst length and programmable latencies allow the same device to be useful for a variety of high bandwidth, high performance memory sys-

tem applications.

3. ORDERING INFORMATION

Part No.

K4S560432N-LC/L75

K4S560832N-LC/L75

K4S561632N-LC/L60

K4S561632N-LC/L75

Orgainization

64M x 4

32M x 8

16M x 16

Max Freq.

133MHz (CL=3)

166MHz (CL=3)

133MHz (CL=3)

LVTTL

54pin TSOP(II)

Lead-Free & Halogen-Free

Interface

Package

[ Table 1 ] Row & Column address configuration

Organization

64Mx4

32Mx8

16Mx16

Row Address

A0~A12

Column Address

A0-A9, A11

A0-A9

A0-A8

-4-

K4S560432N

K4S560832N

K4S561632N

datasheet

(0.80)

(0.50)

#54

#28

Rev. 1.0

SDRAM

4. PACKAGE PHYSICAL DIMENSION

Unit : mm

10.16

0.10

(1.50)

(0.80)

0.665

0.05

0.210

0.05

1.00

0.10

0.1

(10°)

1.20 MAX

22.22

0.10

0.125

- 0.035

+0.075

(0.50)

(1.50)

#27

(10°)

11.76

0.20

(10.76)

0.05 MIN

)

(0.71)

0.80TYP

[0.80

0.08]

0.075 MAX

)

Detail A

Detail B

NOTE

1. ( ) IS REFERENCE

2. [ ] IS ASS’Y OUT QUALITY

Detail A

0.30

- 0.05

+0.10

Detail B

(0°

∼

8°)

0.35

- 0.05

+0.10

Figure 1. 54Pin TSOP(II) Package Dimension

-5-

[

(10°)

[

(4°)

0.10 MAX

0.45 ~ 0.75

0.25TYP

More (Only the first 5 pages are displayed. Please Download Datasheet to view the full content.) >

K4S560832N-LL750 Related Products

	K4S560832N-LL750	K4S561632N-LC750	K4S560832N-LC75	K4S560832N-LC750	K4S560432N-LC750	K4S560432N-LL750	K4S561632N-LL750	K4S561632N-LL600	K4S561632N-LC600	K4S561632N-LC75
Description	Synchronous DRAM, 32MX8, 5.4ns, CMOS, PDSO54, 0.400 X 0.875 INCH, 0.80 MM PITCH, HALOGEN FREE AND ROHS COMPLIANT, TSOP2-54	Synchronous DRAM, 16MX16, 5.4ns, CMOS, PDSO54, 0.400 X 0.875 INCH, 0.80 MM PITCH, HALOGEN FREE AND ROHS COMPLIANT, TSOP2-54	Synchronous DRAM, 32MX8, 5.4ns, CMOS, PDSO54, 0.400 X 0.875 INCH, 0.80 MM PITCH, HALOGEN FREE AND ROHS COMPLIANT, TSOP2-54	Synchronous DRAM, 32MX8, 5.4ns, CMOS, PDSO54, 0.400 X 0.875 INCH, 0.80 MM PITCH, HALOGEN FREE AND ROHS COMPLIANT, TSOP2-54	Synchronous DRAM, 64MX4, 5.4ns, CMOS, PDSO54, 0.400 X 0.875 INCH, 0.80 MM PITCH, HALOGEN FREE AND ROHS COMPLIANT, TSOP2-54	Synchronous DRAM, 64MX4, 5.4ns, CMOS, PDSO54, 0.400 X 0.875 INCH, 0.80 MM PITCH, HALOGEN FREE AND ROHS COMPLIANT, TSOP2-54	Synchronous DRAM, 16MX16, 5.4ns, CMOS, PDSO54, 0.400 X 0.875 INCH, 0.80 MM PITCH, HALOGEN FREE AND ROHS COMPLIANT, TSOP2-54	Synchronous DRAM, 16MX16, 5ns, CMOS, PDSO54, 0.400 X 0.875 INCH, 0.80 MM PITCH, HALOGEN FREE AND ROHS COMPLIANT, TSOP2-54	Synchronous DRAM, 16MX16, 5ns, CMOS, PDSO54, 0.400 X 0.875 INCH, 0.80 MM PITCH, HALOGEN FREE AND ROHS COMPLIANT, TSOP2-54	Synchronous DRAM, 16MX16, 5.4ns, CMOS, PDSO54, 0.400 X 0.875 INCH, 0.80 MM PITCH, HALOGEN FREE AND ROHS COMPLIANT, TSOP2-54
Is it Rohs certified?	conform to	conform to	conform to	conform to	conform to	conform to	conform to	conform to	conform to	conform to
Maker	SAMSUNG	SAMSUNG	SAMSUNG	SAMSUNG	SAMSUNG	SAMSUNG	SAMSUNG	SAMSUNG	SAMSUNG	SAMSUNG
package instruction	TSOP2, TSOP54,.46,32	TSOP2, TSOP54,.46,32	TSOP2, TSOP54,.46,32	TSOP2, TSOP54,.46,32	TSOP2, TSOP54,.46,32	TSOP2, TSOP54,.46,32	TSOP2, TSOP54,.46,32	TSOP2, TSOP54,.46,32	TSOP2, TSOP54,.46,32	TSOP2, TSOP54,.46,32
Reach Compliance Code	compliant	unknown	compliant	compliant	unknown	unknown	compliant	compliant	compliant	unknown
access mode	FOUR BANK PAGE BURST	FOUR BANK PAGE BURST	FOUR BANK PAGE BURST	FOUR BANK PAGE BURST	FOUR BANK PAGE BURST	FOUR BANK PAGE BURST	FOUR BANK PAGE BURST	FOUR BANK PAGE BURST	FOUR BANK PAGE BURST	FOUR BANK PAGE BURST
Maximum access time	5.4 ns	5.4 ns	5.4 ns	5.4 ns	5.4 ns	5.4 ns	5.4 ns	5 ns	5 ns	5.4 ns
Other features	AUTO/SELF REFRESH	AUTO/SELF REFRESH	AUTO/SELF REFRESH	AUTO/SELF REFRESH	AUTO/SELF REFRESH	AUTO/SELF REFRESH	AUTO/SELF REFRESH	AUTO/SELF REFRESH	AUTO/SELF REFRESH	AUTO/SELF REFRESH
Maximum clock frequency (fCLK)	133 MHz	133 MHz	133 MHz	133 MHz	133 MHz	133 MHz	133 MHz	133 MHz	133 MHz	133 MHz
I/O type	COMMON	COMMON	COMMON	COMMON	COMMON	COMMON	COMMON	COMMON	COMMON	COMMON
interleaved burst length	1,2,4,8	1,2,4,8	1,2,4,8	1,2,4,8	1,2,4,8	1,2,4,8	1,2,4,8	1,2,4,8	1,2,4,8	1,2,4,8
JESD-30 code	R-PDSO-G54	R-PDSO-G54	R-PDSO-G54	R-PDSO-G54	R-PDSO-G54	R-PDSO-G54	R-PDSO-G54	R-PDSO-G54	R-PDSO-G54	R-PDSO-G54
length	22.22 mm	22.22 mm	22.22 mm	22.22 mm	22.22 mm	22.22 mm	22.22 mm	22.22 mm	22.22 mm	22.22 mm
memory density	268435456 bit	268435456 bit	268435456 bit	268435456 bit	268435456 bit	268435456 bit	268435456 bit	268435456 bit	268435456 bit	268435456 bit
Memory IC Type	SYNCHRONOUS DRAM	SYNCHRONOUS DRAM	SYNCHRONOUS DRAM	SYNCHRONOUS DRAM	SYNCHRONOUS DRAM	SYNCHRONOUS DRAM	SYNCHRONOUS DRAM	SYNCHRONOUS DRAM	SYNCHRONOUS DRAM	SYNCHRONOUS DRAM
memory width	8	16	8	8	4	4	16	16	16	16
Number of functions	1	1	1	1	1	1	1	1	1	1
Number of ports	1	1	1	1	1	1	1	1	1	1
Number of terminals	54	54	54	54	54	54	54	54	54	54
word count	33554432 words	16777216 words	33554432 words	33554432 words	67108864 words	67108864 words	16777216 words	16777216 words	16777216 words	16777216 words
character code	32000000	16000000	32000000	32000000	64000000	64000000	16000000	16000000	16000000	16000000
Operating mode	SYNCHRONOUS	SYNCHRONOUS	SYNCHRONOUS	SYNCHRONOUS	SYNCHRONOUS	SYNCHRONOUS	SYNCHRONOUS	SYNCHRONOUS	SYNCHRONOUS	SYNCHRONOUS
Maximum operating temperature	70 °C	70 °C	70 °C	70 °C	70 °C	70 °C	70 °C	70 °C	70 °C	70 °C
organize	32MX8	16MX16	32MX8	32MX8	64MX4	64MX4	16MX16	16MX16	16MX16	16MX16
Output characteristics	3-STATE	3-STATE	3-STATE	3-STATE	3-STATE	3-STATE	3-STATE	3-STATE	3-STATE	3-STATE
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
encapsulated code	TSOP2	TSOP2	TSOP2	TSOP2	TSOP2	TSOP2	TSOP2	TSOP2	TSOP2	TSOP2
Encapsulate equivalent code	TSOP54,.46,32	TSOP54,.46,32	TSOP54,.46,32	TSOP54,.46,32	TSOP54,.46,32	TSOP54,.46,32	TSOP54,.46,32	TSOP54,.46,32	TSOP54,.46,32	TSOP54,.46,32
Package shape	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR
Package form	SMALL OUTLINE, THIN PROFILE	SMALL OUTLINE, THIN PROFILE	SMALL OUTLINE, THIN PROFILE	SMALL OUTLINE, THIN PROFILE	SMALL OUTLINE, THIN PROFILE	SMALL OUTLINE, THIN PROFILE	SMALL OUTLINE, THIN PROFILE	SMALL OUTLINE, THIN PROFILE	SMALL OUTLINE, THIN PROFILE	SMALL OUTLINE, THIN PROFILE
Peak Reflow Temperature (Celsius)	NOT SPECIFIED	260	260	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	260
power supply	3.3 V	3.3 V	3.3 V	3.3 V	3.3 V	3.3 V	3.3 V	3.3 V	3.3 V	3.3 V
Certification status	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified
refresh cycle	8192	8192	8192	8192	8192	8192	8192	8192	8192	8192
Maximum seat height	1.2 mm	1.2 mm	1.2 mm	1.2 mm	1.2 mm	1.2 mm	1.2 mm	1.2 mm	1.2 mm	1.2 mm
self refresh	YES	YES	YES	YES	YES	YES	YES	YES	YES	YES
Continuous burst length	1,2,4,8,FP	1,2,4,8,FP	1,2,4,8,FP	1,2,4,8,FP	1,2,4,8,FP	1,2,4,8,FP	1,2,4,8,FP	1,2,4,8,FP	1,2,4,8,FP	1,2,4,8,FP
Maximum standby current	0.002 A	0.002 A	0.002 A	0.002 A	0.002 A	0.002 A	0.002 A	0.002 A	0.002 A	0.002 A
Maximum slew rate	0.04 mA	0.05 mA	0.04 mA	0.04 mA	0.04 mA	0.04 mA	0.05 mA	0.05 mA	0.05 mA	0.05 mA
Maximum supply voltage (Vsup)	3.6 V	3.6 V	3.6 V	3.6 V	3.6 V	3.6 V	3.6 V	3.6 V	3.6 V	3.6 V
Minimum supply voltage (Vsup)	3 V	3 V	3 V	3 V	3 V	3 V	3 V	3 V	3 V	3 V
Nominal supply voltage (Vsup)	3.3 V	3.3 V	3.3 V	3.3 V	3.3 V	3.3 V	3.3 V	3.3 V	3.3 V	3.3 V
surface mount	YES	YES	YES	YES	YES	YES	YES	YES	YES	YES
technology	CMOS	CMOS	CMOS	CMOS	CMOS	CMOS	CMOS	CMOS	CMOS	CMOS
Temperature level	COMMERCIAL	COMMERCIAL	COMMERCIAL	COMMERCIAL	COMMERCIAL	COMMERCIAL	COMMERCIAL	COMMERCIAL	COMMERCIAL	COMMERCIAL
Terminal form	GULL WING	GULL WING	GULL WING	GULL WING	GULL WING	GULL WING	GULL WING	GULL WING	GULL WING	GULL WING
Terminal pitch	0.8 mm	0.8 mm	0.8 mm	0.8 mm	0.8 mm	0.8 mm	0.8 mm	0.8 mm	0.8 mm	0.8 mm
Terminal location	DUAL	DUAL	DUAL	DUAL	DUAL	DUAL	DUAL	DUAL	DUAL	DUAL
Maximum time at peak reflow temperature	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED
width	10.16 mm	10.16 mm	10.16 mm	10.16 mm	10.16 mm	10.16 mm	10.16 mm	10.16 mm	10.16 mm	10.16 mm
Is it lead-free?	Lead free	-	Lead free	Lead free	Lead free	Lead free	-	-	-	Lead free
Parts packaging code	TSOP2	TSOP2	-	TSOP2	TSOP2	TSOP2	TSOP2	TSOP2	TSOP2	-
Contacts	54	54	-	54	54	54	54	54	54	-
ECCN code	EAR99	EAR99	-	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99	-

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