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P0102MN5XA4

Description
SILICON CONTROLLED RECTIFIER,600V V(DRM),500MA I(T),SOT-223
CategoryAnalog mixed-signal IC    Trigger device   
File Size61KB,6 Pages
ManufacturerSTMicroelectronics
Websitehttp://www.st.com/
Environmental Compliance
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P0102MN5XA4 Overview

SILICON CONTROLLED RECTIFIER,600V V(DRM),500MA I(T),SOT-223

P0102MN5XA4 Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerSTMicroelectronics
Reach Compliance Codenot_compliant
Critical rise rate of minimum off-state voltage75 V/us
Maximum DC gate trigger current0.2 mA
Maximum DC gate trigger voltage0.8 V
Maximum holding current5 mA
JESD-609 codee3
Maximum leakage current0.1 mA
Humidity sensitivity level1
On-state non-repetitive peak current8 A
Maximum on-state voltage1.95 V
Maximum on-state current500 A
Maximum operating temperature125 °C
Minimum operating temperature-40 °C
Off-state repetitive peak voltage600 V
surface mountYES
Terminal surfaceMatte Tin (Sn) - annealed
Trigger device typeSCR
®
P01xxxN
SENSITIVE SCR
FEATURES
n
n
I
T(RMS)
= 0.8A
V
DRM
/ V
RRM
= 200V to 600V
A
DESCRIPTION
High performance planar technology. These parts
are intended for general purpose applications
where low gate sensitivity is required.
K
A
G
SOT223
(Plastic)
ABSOLUTE MAXIMUM RATINGS
Symbol
I
T(RMS)
*
I
T(AV)
*
I
TSM
Parameter
RMS on-state current (180° conduction angle)
Mean on-state current (180° conduction angle)
Non repetitive surge peak on-state current
(T
j
initial = 25°C )
I
2
t Value for fusing
Critical rate of rise of on-state current
I
G
= 10 mA
di
G
/dt = 0.1 A/µs.
Storage temperature range
Operating junction temperature range
Maximum lead temperature for soldering during 10s
Ta= 70°C
Ta= 70°C
tp = 8.3 ms
tp = 10 ms
I
2
t
dI/dt
T
stg
T
j
Tl
tp = 10 ms
Value
0.8
0.5
8
7
0.24
30
- 40, + 150
- 40, + 125
260
A
2
s
A/µs
°C
°C
Unit
A
A
A
* : With 5cm2 copper (e=35µm) surface under tab.
Voltage
Symbol
V
DRM
V
RRM
Parameter
B
Repetitive peak off-state voltage
T
j
= 125°C R
GK
= 1K
200
D
400
M
600
V
Unit
March 2000 - Ed: 1A
1/6

P0102MN5XA4 Related Products

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Description SILICON CONTROLLED RECTIFIER,600V V(DRM),500MA I(T),SOT-223 Line Switch, fits to Felcom 0.8A, 600V, SCR SILICON CONTROLLED RECTIFIER,600V V(DRM),500MA I(T),SOT-223 SILICON CONTROLLED RECTIFIER,200V V(DRM),500MA I(T),SOT-223 SILICON CONTROLLED RECTIFIER,400V V(DRM),500MA I(T),SOT-223 SILICON CONTROLLED RECTIFIER,400V V(DRM),500MA I(T),SOT-223 SILICON CONTROLLED RECTIFIER,600V V(DRM),500MA I(T),SOT-223
Is it Rohs certified? conform to - - conform to conform to conform to conform to conform to
Maker STMicroelectronics - - - STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics
Reach Compliance Code not_compliant - unknown compliant compliant not_compliant compliant compliant
Critical rise rate of minimum off-state voltage 75 V/us - - 50 V/us 75 V/us 75 V/us 80 V/us 80 V/us
Maximum DC gate trigger current 0.2 mA - 0.001 mA 0.001 mA 0.2 mA 0.2 mA 0.025 mA 0.025 mA
Maximum DC gate trigger voltage 0.8 V - - 0.8 V 0.8 V 0.8 V 0.8 V 0.8 V
Maximum holding current 5 mA - - 5 mA 5 mA 5 mA 5 mA 5 mA
JESD-609 code e3 - - e3 e3 e3 e3 e3
Maximum leakage current 0.1 mA - - 0.1 mA 0.1 mA 0.1 mA 0.1 mA 0.1 mA
On-state non-repetitive peak current 8 A - - 8 A 8 A 8 A 8 A 8 A
Maximum on-state voltage 1.95 V - - 1.95 V 1.95 V 1.95 V 1.95 V 1.95 V
Maximum on-state current 500 A - - 500 A 500 A 500 A 500 A 500 A
Maximum operating temperature 125 °C - 125 °C 125 °C 125 °C 125 °C 125 °C 125 °C
Minimum operating temperature -40 °C - -40 °C -40 °C -40 °C -40 °C -40 °C -40 °C
Off-state repetitive peak voltage 600 V - 600 V 600 V 200 V 400 V 400 V 600 V
surface mount YES - YES YES YES YES YES YES
Terminal surface Matte Tin (Sn) - annealed - - Matte Tin (Sn) Matte Tin (Sn) Matte Tin (Sn) - annealed Matte Tin (Sn) Matte Tin (Sn)
Trigger device type SCR - SCR SCR SCR SCR SCR SCR

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