ZXM61N02F
20V N-CHANNEL ENHANCEMENT MODE MOSFET
SUMMARY
V
(BR)DSS
=20V; R
DS(ON)
=0.18
;
I
D
=1.7A
DESCRIPTION
This new generation of high density MOSFETs from Zetex utilises a unique
structure that combines the benefits of low on-resistance with fast switching
speed. This makes them ideal for high efficiency, low voltage, power
management applications.
FEATURES
•
•
•
•
•
•
•
•
•
Low on-resistance
Fast switching speed
Low threshold
Low gate drive
SOT23 package
SOT23
APPLICATIONS
DC - DC Converters
Power Management Functions
Disconnect switches
Motor control
ORDERING INFORMATION
DEVICE
ZXM61N02FTA
ZXM61N02FTC
REEL SIZE
(inches)
7
13
TAPE WIDTH (mm)
8mm embossed
8mm embossed
QUANTITY
PER REEL
Top View
3000 units
10000 units
DEVICE MARKING
•
N02
PROVISIONAL ISSUE A - MAY 1999
57
ZXM61N02F
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
Drain-Source Voltage
Gate Source Voltage
Continuous Drain Current (V
GS
=4.5V; T
A
=25°C)(b)
(V
GS
=4.5V; T
A
=70°C)(b)
Pulsed Drain Current (c)
Continuous Source Current (Body Diode) (b)
Pulsed Source Current (Body Diode)
Power Dissipation at T
A
=25°C (a)
Linear Derating Factor
Power Dissipation at T
A
=25°C (b)
Linear Derating Factor
Operating and Storage Temperature Range
SYMBOL
V
DSS
V
GS
I
D
I
DM
I
S
I
SM
P
D
P
D
T
j
:T
stg
LIMIT
20
±
12
1.7
1.3
7.4
0.8
7.4
625
5
806
6.4
-55 to +150
UNIT
V
V
A
A
A
A
mW
mW/°C
mW
mW/°C
°C
THERMAL RESISTANCE
PARAMETER
Junction to Ambient (a)
Junction to Ambient (b)
SYMBOL
R
θJA
R
θJA
VALUE
200
155
UNIT
°C/W
°C/W
NOTES
(a) For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper,
in still air conditions
(b) For a device surface mounted on FR4 PCB measured at t 5 secs.
(c) Repetitive rating - pulse width limited by maximum junction temperature. Refer to Transient Thermal
Impedance graph.
PROVISIONAL ISSUE A - MAY 1999
58
ZXM61N02F
CHARACTERISTICS
10
Refer Note (a)
Max Power Dissipation (Watts)
1.0
0.8
Refer Note (b)
Refer Note (a)
I
D
- Drain Current (A)
1
0.6
0.4
0.2
0
100m
DC
1s
100ms
10ms
1ms
100us
10m
0.1
1
10
100
0
20
40
60
80
100
120
140
160
V
DS
- Drain-Source Voltage (V)
T - Temperature (°C)
Safe Operating Area
Derating Curve
180
240
Refer Note (b)
Thermal Resistance (°C/W)
Thermal Resistance (°C/W)
160
140
120
100
80
60
40
20
D=0.2
D=0.1
D=0.05
Single Pulse
D=0.5
Refer Note (a)
200
160
120
D=0.5
80
40
D=0.2
D=0.1
Single Pulse
0
0.0001
0.001
0.01
0.1
1
10
0
0.0001 0.001
D=0.05
0.01
0.1
1
10
100
1000
Pulse Width (s)
Pulse Width (s)
Transient Thermal Impedance
Transient Thermal Impedance
PROVISIONAL ISSUE A - MAY 1999
59
ZXM61N02F
ELECTRICAL CHARACTERISTICS
(at T
A
= 25°C unless otherwise stated).
PARAMETER
STATIC
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body Leakage
Gate-Source Threshold Voltage
Static Drain-Source On-State Resistance
(1)
Forward Transconductance (3)
DYNAMIC
(3)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
SWITCHING(2)
(3)
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
SOURCE-DRAIN DIODE
Diode Forward Voltage (1)
Reverse Recovery Time (3)
Reverse Recovery Charge (3)
V
SD
t
rr
Q
rr
12.9
5.2
0.95
V
ns
nC
T
J
=25°C, I
S
=0.93A,
V
GS
=0V
T
J
=25°C, I
F
=0.93A,
di/dt= 100A/µs
t
d(on)
t
r
t
d(off)
t
f
Q
g
Q
gs
Q
gd
2.4
4.2
7.8
4.2
3.4
0.41
0.8
ns
ns
ns
ns
nC
nC
nC
V
DS
=16V,V
GS
=4.5V,
I
D
=0.93A
(refer to test
circuit)
V
DD
=10V, I
D
=0.93A
R
G
=6.2Ω, R
D
=11Ω
(refer to test
circuit)
C
iss
C
oss
C
rss
160
50
30
pF
pF
pF
V
DS
=15 V, V
GS
=0V,
f=1MHz
V
(BR)DSS
I
DSS
I
GSS
V
GS(th)
R
DS(on)
g
fs
1.3
0.7
0.18
0.24
20
1
100
V
µA
nA
V
Ω
Ω
S
I
D
=250µA, V
GS
=0V
V
DS
=20V, V
GS
=0V
V
GS
=± 12V, V
DS
=0V
I
D
=250µA, V
DS
= V
GS
V
GS
=4.5V, I
D
=0.93A
V
GS
=2.7V, I
D
=0.47A
V
DS
=10V,I
D
=0.47A
SYMBOL MIN.
TYP.(3) MAX.
UNIT CONDITIONS.
NOTES
(1) Measured under pulsed conditions. Width≤300µs. Duty cycle
≤2%
.
(2) Switching characteristics are independent of operating junction temperature.
(3) For design aid only, not subject to production testing.
PROVISIONAL ISSUE A - MAY 1999
60
ZXM61N02F
TYPICAL CHARACTERISTICS
100
+25°C
VGS
100
+150°C
VGS
6V
4V
3.5V
3V
2.5V
2V
10
6V
4V
3V
2.5V
2V
I
D
- Drain Current (A)
I
D
- Drain Current (A)
10
1
1
1.5V
100m
1.5V
100m
10m
0.1
1
10
10m
0.1
1
10
V
DS
- Drain-Source Voltage (V)
V
DS
- Drain-Source Voltage (V)
Output Characteristics
Output Characteristics
Normalised R
DS(on)
and V
GS(th)
10
V
DS
=10V
1.6
1.4
1.2
1.0
0.8
0.6
V
GS(th)
R
DS(on)
I
D
- Drain Current (A)
1
V
GS
=4.5V
I
D
=0.93A
T=150°C
T=25°C
0.1
V
GS
=V
DS
I
D
=250µA
0.01
1.5
2.5
3.5
4.5
0.4
-100
0
100
200
V
GS
- Gate-Source Voltage (V)
T
J
- Junction Temperature (°C)
Transfer Characteristics
R
DS(on)
- Drain Source On Resistance (Ω)
Normalised R
DS(on)
and V
GS(th)
v Temperature
I
SD
- Reverse Drain Current (A)
100
10
1
100m
10m
1m
100µ
T=150°C
T=25°C
10
1
V
GS
=2.7V
V
GS
=4.5V
0.1
0.1
1
10
100
0.2
0.4
0.6
0.8
1.0
1.2
1.4
I
D
- Drain Current (A)
V
SD
- Source-Drain Voltage (V)
On-Resistance v Drain Current
Source-Drain Diode Forward Voltage
PROVISIONAL ISSUE A - MAY 1999
61
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