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DISCRETE SEMICONDUCTORS
DATA SHEET
handbook, halfpage
M3D087
BSP50; BSP51; BSP52
NPN Darlington transistors
Product data sheet
Supersedes data of 1997 Apr 22
1999 Apr 23
NXP Semiconductors
Product data sheet
NPN Darlington transistors
FEATURES
•
High current (max. 1 A)
•
Low voltage (max. 80 V)
•
Integrated diode and resistor.
APPLICATIONS
•
Industrial high gain amplification.
4
BSP50; BSP51; BSP52
PINNING
PIN
1
2,4
3
base
collector
emitter
DESCRIPTION
2, 4
DESCRIPTION
NPN Darlington transistor in a SOT223 plastic package.
PNP complements: BSP60, BSP61 and BSP62.
1
Top view
2
3
MAM265
1
3
Fig.1 Simplified outline (SOT223) and symbol.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
V
CBO
BSP50
BSP51
BSP52
V
CES
collector-emitter voltage
BSP50
BSP51
BSP52
V
EBO
I
C
I
CM
I
B
P
tot
T
stg
T
j
T
amb
Note
1. Device mounted on a printed-circuit board, single sided copper, tinplated, mounting pad for collector 1 cm
2
.
For other mounting conditions, see
“Thermal considerations for the SOT223 in the General Part of associated
Handbook”.
emitter-base voltage
collector current (DC)
peak collector current
base current (DC)
total power dissipation
storage temperature
junction temperature
operating ambient temperature
open collector
V
BE
= 0
−
−
−
−
−
−
−
T
amb
≤
25
°C;
note 1
−
−65
−
−65
45
60
80
5
1
2
100
1.25
+150
150
+150
V
V
V
V
A
A
mA
W
°C
°C
°C
PARAMETER
collector-base voltage
CONDITIONS
open emitter
−
−
−
60
80
90
V
V
V
MIN.
MAX.
UNIT
1999 Apr 23
2
NXP Semiconductors
Product data sheet
NPN Darlington transistors
THERMAL CHARACTERISTICS
SYMBOL
R
th j-a
R
th j-s
Note
PARAMETER
thermal resistance from junction to ambient
thermal resistance from junction to solder point
BSP50; BSP51; BSP52
CONDITIONS
note 1
VALUE
96
17
UNIT
K/W
K/W
1. Device mounted on a printed-circuit board, single sided copper, tinplated, mounting pad for collector 1 cm
2
.
For other mounting conditions, see
“Thermal considerations for the SOT223 in the General Part of associated
Handbook“.
CHARACTERISTICS
T
j
= 25
°C
unless otherwise specified.
SYMBOL
I
CES
PARAMETER
collector cut-off current
BSP50
BSP51
BSP52
I
EBO
h
FE
emitter cut-off current
DC current gain
V
BE
= 0; V
CE
= 45 V
V
BE
= 0; V
CE
= 60 V
V
BE
= 0; V
CE
= 80 V
I
C
= 0; V
EB
= 4 V
V
CE
= 10 V; note 1; see Fig.2
I
C
= 150 mA
I
C
= 500 mA
V
CEsat
collector-emitter saturation
voltage
base-emitter saturation
voltage
transition frequency
I
C
= 500 mA; I
B
= 0.5 mA
I
C
= 500 mA; I
B
= 0.5 mA;
T
j
= 150
°C
I
C
= 500 mA; I
B
= 0.5 mA
1 000
2 000
−
−
−
−
−
−
−
−
200
−
−
1.3
1.3
1.9
−
−
−
V
V
V
MHz
−
−
−
−
−
−
−
−
50
50
50
50
nA
nA
nA
nA
CONDITIONS
MIN.
TYP.
MAX.
UNIT
V
BEsat
f
T
t
on
t
off
Note
I
C
= 500 mA; V
CE
= 5 V; f = 100 MHz
−
I
Con
= 500 mA; I
Bon
= 0.5 mA;
I
Boff
=
−0.5
mA
−
−
Switching times (between 10% and 90% levels);
see Fig.3
turn-on time
turn-off time
500
1 300
ns
ns
1. Pulse test: t
p
≤
300
μs; δ ≤
0.02.
1999 Apr 23
3
NXP Semiconductors
Product data sheet
NPN Darlington transistors
BSP50; BSP51; BSP52
handbook, full pagewidth
5000
MGD838
hFE
4000
3000
2000
1000
0
10
−1
1
10
10
2
IC (mA)
10
3
V
CE
= 10 V.
Fig.2 DC current gain; typical values.
handbook, full pagewidth
VBB
VCC
RB
oscilloscope
Vi
R1
(probe)
450
Ω
R2
RC
Vo
(probe)
450
Ω
DUT
oscilloscope
MLB826
V
i
= 10 V; T = 200
μs;
t
p
= 6
μs;
t
r
= t
f
≤
3 ns.
R1 = 56
Ω;
R2 = 10 kΩ; R
B
= 10 kΩ; R
C
= 18
Ω.
V
BB
=
−1.8
V; V
CC
= 10.7 V.
Oscilloscope: input impedance Z
i
= 50
Ω.
Fig.3 Test circuit for switching times.
1999 Apr 23
4
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