BUD636A datasheet, PDF - EEWORLD Datasheet

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BUD636A: DescriptionPower Bipolar Transistor, 5A I(C), 450V V(BR)CEO, 1-Element, NPN, Silicon, TO-251, Plastic/Epoxy, 3 Pin,; CategoryDiscrete semiconductor The transistor; File Size167KB，9 Pages; ManufacturerTEMIC; Websitehttp://www.temic.de/

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BUD636A Overview

Power Bipolar Transistor, 5A I(C), 450V V(BR)CEO, 1-Element, NPN, Silicon, TO-251, Plastic/Epoxy, 3 Pin,

BUD636A Parametric

Parameter Name	Attribute value
Maker	TEMIC
Reach Compliance Code	unknown
Shell connection	COLLECTOR
Maximum collector current (IC)	5 A
Collector-emitter maximum voltage	450 V
Configuration	SINGLE
Minimum DC current gain (hFE)	4
JEDEC-95 code	TO-251
JESD-30 code	R-PSIP-T3
Number of components	1
Number of terminals	3
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	IN-LINE
Polarity/channel type	NPN
Certification status	Not Qualified
surface mount	NO
Terminal form	THROUGH-HOLE
Terminal location	SINGLE
transistor applications	SWITCHING
Transistor component materials	SILICON
Nominal transition frequency (fT)	4 MHz

BUD636A Preview

BUD636A

Silicon NPN High Voltage Switching Transistor

Features

Simple-sWitch-Off Transistor

(SWOT)

HIGH SPEED technology

Planar passivation

100 kHz switching rate

Very low switching losses

Very low dynamic saturation

Very low operating temperature

Optimized RBSOA

High reverse voltage

Applications

Electronic lamp ballast circuits

Switch-mode power supplies

94 8965

94 8964

BUD636A

1 Base 2 Collector 3 Emitter

BUD636A –SMD

1 Base 2 Collector 3 Emitter

Absolute Maximum Ratings

case

= 25°C, unless otherwise specified

Parameter

Collector-emitter voltage

Test Conditions

Symbol

CEO

CEW

CES

EBO

tot

stg

Value

450

550

1000

7.5

2.5

150

–65 to +150

Unit

Emitter-base voltage

Collector current

Collector peak current

Base current

Base peak current

Total power dissipation

Junction temperature

Storage temperature range

case

≤

TELEFUNKEN Semiconductors

Rev. A2, 18-Jul-97

1 (9)

BUD636A

Maximum Thermal Resistance

case

= 25°C, unless otherwise specified

Parameter

Junction case

Test Conditions

Symbol

thJC

Value

3.12

Unit

K/W

Electrical Characteristics

case

= 25°C, unless otherwise specified

Parameter

Collector cut-off current

Collector-emitter breakdown

voltage (figure 1)

Emitter-base breakdown voltage

Collector-emitter saturation voltage

Base-emitter saturation voltage

DC forward current transfer ratio

Test Conditions

CES

= 1000 V

CES

= 1000 V; T

case

= 150

= 300 mA; L = 125 mH;

measure

= 100 mA

= 1 mA

= 0.8 A; I

= 0.2 A

= 2.5 A; I

= 0.8 A

= 0.8 A; I

= 0.2 A

= 2.5 A; I

= 0.8 A

= 2 V; I

= 10 mA

= 2 V; I

= 0.8 A

= 2 V; I

= 2.5 A

= 5 V; I

= 5 A

= 50 V; L = 1 mH; I

= 5 A;

= 1.7 A; –I

= 0.5 A;

–V

= 5 V

= 2.5 A; I

= 0.5 A, t = 1

= 2.5 A; I

= 0.5 A, t = 3

= 200 mA; V

= 10 V;

f = 1 MHz

Symbol

CES

(BR)CEO

(BR)EBO

CEsat

BEsat

CEW

Min

Typ

Max

0.5

Unit

450

0.1

0.2

0.9

0.2

0.4

1.2

Collector-emitter working voltage

550

Dynamic saturation voltage

Gain bandwidth product

CEsatdyn

2.8

MHz

2 (9)

TELEFUNKEN Semiconductors

Rev. A2, 18-Jul-97

BUD636A

Switching Characteristics

case

= 25°C, unless otherwise specified

Parameter

Test Conditions

Resistive load (figure 2)

Turn on time

= 0.8 A; I

= 0.2 A; –I

= 0.4 A;

;

= 250 V

Storage time

Fall time

Turn on time

= 2.5 A; I

= 0.5 A; –I

= 1.3 A;

;

= 250 V

Storage time

Fall time

Inductive load (figure 3)

Storage time

= 0.8 A; I

= 0.2 A; –I

= 0.4 A;

;

clamp

= 300 V; L = 200

Fall time

Storage time

= 2.5 A; I

= 0.5 A; –I

= 1.3 A;

;

clamp

= 300 V; L = 200

Fall time

Symbol

Min

Typ

0.15

0.3

0.4

1.3

0.1

0.2

1.4

0.1

Max

0.25

3.5

0.45

0.6

1.5

0.15

3.5

0.3

1.7

0.15

Unit

94 8863

10 V

measure

0 to 30 V

(BR)CEO

3 Pulses

(BR)CEO

0.1

10 ms

(BR)R

100 m

Figure 1. Test circuit for V

(BR)CE0

TELEFUNKEN Semiconductors

Rev. A2, 18-Jul-97

3 (9)

BUD636A

94 8852

–I

(1)

0.9 I

0.1 I

off

(1) Fast electronic switch

Figure 2. Test circuit for switching characteristics – resistive load

94 8853

–I

(2)

(1)

clamp

0.9 I

(1) Fast electronic switch

(2) Fast recovery rectifier

0.1 I

Figure 3. Test circuit for switching characteristics – inductive load

4 (9)

TELEFUNKEN Semiconductors

Rev. A2, 18-Jul-97

BUD636A

Typical Characteristics

case

= 25

C unless otherwise specified)

tot

– Total Power Dissipation ( W )

– Collector Current ( A )

95 10508

100

3.12 K/W

12.5 K/W

25 K/W

0.1

0.01

0.001

50 K/W

thJA

= 135 K/W

0.1 x I

< I

< 0.5 x I

CEsat

< 2V

100

200

300

400

500

600

95 10499

100

125

150

– Collector Emitter Voltage ( V )

case

– Case Temperature (

°C

)

Figure 4. V

CEW

– Diagram

CEsat

– Collector Emitter Saturation Voltage ( V )

= 490 mA

– Collector Current ( A )

400 mA

290 mA

190 mA

95 mA

49 mA

95 10512

Figure 7. P

tot

vs.T

case

0.6A

= 4A

0.1

0.01

0.1

– Collector Emitter Voltage ( V )

95 10513

– Base Current ( A )

Figure 5. I

vs. V

– Forward DC Current Transfer Ratio

100

Figure 8. V

CEsat

vs. I

= 125°C

75°C

25°C

25V

10V

= 2V

0.001

95 10510

0.01

0.1

95 10511

0.001

0.01

0.1

– Collector Current ( A )

Figure 6. h

vs. I

Figure 9. h

vs. I

TELEFUNKEN Semiconductors

Rev. A2, 18-Jul-97

5 (9)

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BUD636A Related Products

	BUD636A	BUD636A-SMD
Description	Power Bipolar Transistor, 5A I(C), 450V V(BR)CEO, 1-Element, NPN, Silicon, TO-251, Plastic/Epoxy, 3 Pin,	Power Bipolar Transistor, 5A I(C), 450V V(BR)CEO, 1-Element, NPN, Silicon, TO-252, Plastic/Epoxy, 2 Pin,
Maker	TEMIC	TEMIC
Reach Compliance Code	unknown	unknown
Shell connection	COLLECTOR	COLLECTOR
Maximum collector current (IC)	5 A	5 A
Collector-emitter maximum voltage	450 V	450 V
Configuration	SINGLE	SINGLE
Minimum DC current gain (hFE)	4	4
JEDEC-95 code	TO-251	TO-252
JESD-30 code	R-PSIP-T3	R-PSSO-G2
Number of components	1	1
Number of terminals	3	2
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY
Package shape	RECTANGULAR	RECTANGULAR
Package form	IN-LINE	SMALL OUTLINE
Polarity/channel type	NPN	NPN
Certification status	Not Qualified	Not Qualified
surface mount	NO	YES
Terminal form	THROUGH-HOLE	GULL WING
Terminal location	SINGLE	SINGLE
transistor applications	SWITCHING	SWITCHING
Transistor component materials	SILICON	SILICON
Nominal transition frequency (fT)	4 MHz	4 MHz

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