GS8342T09BGD-333IT datasheet, PDF

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GS8342T09BGD-333IT: DescriptionDDR SRAM, 4MX9, 0.45ns, CMOS, PBGA165, 13 X 15 MM, 1 MM PITCH, ROHS COMPLIANT, FPBGA-165; Categorystorage storage; File Size488KB，35 Pages; ManufacturerGSI Technology; Websitehttp://www.gsitechnology.com/; Environmental Compliance

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GS8342T09BGD-333IT Overview

DDR SRAM, 4MX9, 0.45ns, CMOS, PBGA165, 13 X 15 MM, 1 MM PITCH, ROHS COMPLIANT, FPBGA-165

GS8342T09BGD-333IT Parametric

Parameter Name	Attribute value
Is it Rohs certified?	conform to
Maker	GSI Technology
Parts packaging code	BGA
package instruction	LBGA, BGA165,11X15,40
Contacts	165
Reach Compliance Code	compliant
ECCN code	3A991.B.2.B
Maximum access time	0.45 ns
Other features	PIPELINED ARCHITECTURE
Maximum clock frequency (fCLK)	333 MHz
I/O type	COMMON
JESD-30 code	R-PBGA-B165
length	15 mm
memory density	37748736 bit
Memory IC Type	DDR SRAM
memory width	9
Number of functions	1
Number of terminals	165
word count	4194304 words
character code	4000000
Operating mode	SYNCHRONOUS
Maximum operating temperature	85 °C
Minimum operating temperature	-40 °C
organize	4MX9
Output characteristics	3-STATE
Package body material	PLASTIC/EPOXY
encapsulated code	LBGA
Encapsulate equivalent code	BGA165,11X15,40
Package shape	RECTANGULAR
Package form	GRID ARRAY, LOW PROFILE
Parallel/Serial	PARALLEL
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
power supply	1.5/1.8,1.8 V
Certification status	Not Qualified
Maximum seat height	1.4 mm
Maximum standby current	0.205 A
Minimum standby current	1.7 V
Maximum slew rate	0.525 mA
Maximum supply voltage (Vsup)	1.9 V
Minimum supply voltage (Vsup)	1.7 V
Nominal supply voltage (Vsup)	1.8 V
surface mount	YES
technology	CMOS
Temperature level	INDUSTRIAL
Terminal form	BALL
Terminal pitch	1 mm
Terminal location	BOTTOM
Maximum time at peak reflow temperature	NOT SPECIFIED
width	13 mm

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GS8342T08/09/18/36BD-400/350/333/300/250

165-Bump BGA

Commercial Temp

Industrial Temp

Features

• Simultaneous Read and Write SigmaDDR™ Interface

• Common I/O bus

• JEDEC-standard pinout and package

• Double Data Rate interface

• Byte Write (x36, x18 and x9) and Nybble Write (x8) function

• Burst of 2 Read and Write

• 1.8 V +100/–100 mV core power supply

• 1.5 V or 1.8 V HSTL Interface

• Pipelined read operation with self-timed Late Write

• Fully coherent read and write pipelines

• ZQ pin for programmable output drive strength

• IEEE 1149.1 JTAG-compliant Boundary Scan

• Pin-compatible with present 9Mb, 18Mb, 36Mb and 72Mb

devices

• 165-bump, 13 mm x 15 mm, 1 mm bump pitch BGA package

• RoHS-compliant 165-bump BGA package available

36Mb SigmaDDR-II

Burst of 2 SRAM

400 MHz–250 MHz

1.8 V V

1.8 V and 1.5 V I/O

inputs, not differential inputs to a single differential clock input

buffer. The device also allows the user to manipulate the

output register clock inputs quasi independently with the C and

C clock inputs. C and C are also independent single-ended

clock inputs, not differential inputs. If the C clocks are tied

high, the K clocks are routed internally to fire the output

registers instead.

Each internal read and write operation in a SigmaDDR-II B2

RAM is two times wider than the device I/O bus. An input data

bus de-multiplexer is used to accumulate incoming data before

it is simultaneously written to the memory array. An output

data multiplexer is used to capture the data produced from a

single memory array read and then route it to the appropriate

output drivers as needed.

When a new address is loaded into a x18 or x36 version of the

part, A0 is used to initialize the pointers that control the data

multiplexer / de-multiplexer so the RAM can perform "critical

word first" operations. From an external address point of view,

regardless of the starting point, the data transfers always follow

the same sequence {0, 1} or {1, 0} (where the digits shown

represent A0).

Unlike the x18 and x36 versions, the input and output data

multiplexers of the x8 and x9 versions are not preset by

address inputs and therefore do not allow "critical word first"

operations. The address fields of the x8 and x9 SigmaDDR-II

B2 RAMs are one address pin less than the advertised index

depth (e.g., the 4M x 8 has a 2M addressable index, and A0 is

not an accessible address pin).

SigmaDDR™ Family Overview

The GS8342T08/09/18/36BD are built in compliance with the

SigmaDDR-II SRAM pinout standard for Common I/O

synchronous SRAMs. They are 37,748,736-bit (36Mb)

SRAMs. The GS8342T08/09/18/36BD SigmaDDR-II SRAMs

are just one element in a family of low power, low voltage

HSTL I/O SRAMs designed to operate at the speeds needed to

implement economical high performance networking systems.

Clocking and Addressing Schemes

The GS8342T08/09/18/36BD SigmaDDR-II SRAMs are

synchronous devices. They employ two input register clock

inputs, K and K. K and K are independent single-ended clock

Parameter Synopsis

-400

tKHKH

tKHQV

2.5 ns

0.45 ns

-350

2.86 ns

0.45 ns

-333

3.0 ns

0.45 ns

-300

3.3 ns

0.45 ns

-250

4.0 ns

0.45 ns

Rev: 1.02 6/2012

1/35

Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.

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