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BSS123T/R

Description
TRANSISTOR 150 mA, 100 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, PLASTIC, SMD, 3 PIN, FET General Purpose Small Signal
CategoryDiscrete semiconductor    The transistor   
File Size19KB,4 Pages
ManufacturerNXP
Websitehttps://www.nxp.com
Environmental Compliance
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BSS123T/R Overview

TRANSISTOR 150 mA, 100 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, PLASTIC, SMD, 3 PIN, FET General Purpose Small Signal

BSS123T/R Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerNXP
package instructionSMALL OUTLINE, R-PDSO-G3
Contacts3
Reach Compliance Codeunknown
ECCN codeEAR99
ConfigurationSINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage100 V
Maximum drain current (Abs) (ID)0.17 A
Maximum drain current (ID)0.15 A
Maximum drain-source on-resistance6 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
Maximum feedback capacitance (Crss)10 pF
JESD-30 codeR-PDSO-G3
JESD-609 codee3
Humidity sensitivity level1
Number of components1
Number of terminals3
Operating modeENHANCEMENT MODE
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typeN-CHANNEL
Maximum power dissipation(Abs)0.36 W
Certification statusNot Qualified
surface mountYES
Terminal surfaceMatte Tin (Sn)
Terminal formGULL WING
Terminal locationDUAL
Maximum time at peak reflow temperatureNOT SPECIFIED
transistor applicationsSWITCHING
Transistor component materialsSILICON

BSS123T/R Preview

Philips Semiconductors
Product specification
N-channel TrenchMOS transistor
Logic level FET
FEATURES
’Trench’
technology
• Extremely fast switching
• Logic level compatible
• Subminiature surface mounting
package
BSS123
SYMBOL
d
QUICK REFERENCE DATA
V
DSS
= 100 V
I
D
= 150 mA
g
R
DS(ON)
6
(V
GS
= 10 V)
s
GENERAL DESCRIPTION
N-channel enhancement mode
field-effect transistor in a plastic
envelope
using
’trench’
technology.
Applications:-
• Relay driver
• High-speed line driver
• Telephone ringer
The BSS123 is supplied in the
SOT23
subminiature
surface
mounting package.
PINNING
PIN
1
2
3
gate
source
drain
DESCRIPTION
SOT23
3
Top view
1
2
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134)
SYMBOL PARAMETER
V
DSS
V
DGR
V
GS
I
D
I
DM
P
D
T
j
, T
stg
Drain-source voltage
Drain-gate voltage
Gate-source voltage
Continuous drain current
Pulsed drain current
Total power dissipation
Operating junction and
storage temperature
CONDITIONS
T
j
= 25 ˚C to 150˚C
T
j
= 25 ˚C to 150˚C; R
GS
= 20 kΩ
T
a
= 25 ˚C
T
a
= 25 ˚C
T
a
= 25 ˚C
MIN.
-
-
-
-
-
-
- 55
MAX.
100
100
±
20
150
600
0.25
150
UNIT
V
V
V
mA
mA
W
˚C
THERMAL RESISTANCES
SYMBOL PARAMETER
R
th j-a
Thermal resistance junction
to ambient
CONDITIONS
surface mounted on FR4 board
TYP.
500
MAX.
-
UNIT
K/W
August 2000
1
Rev 1.000
Philips Semiconductors
Product specification
N-channel TrenchMOS transistor
Logic level FET
ELECTRICAL CHARACTERISTICS
T
j
= 25˚C unless otherwise specified
SYMBOL PARAMETER
V
(BR)DSS
V
GS(TO)
R
DS(ON)
g
fs
I
DSS
I
GSS
t
on
t
off
C
iss
C
oss
C
rss
Drain-source breakdown
voltage
Gate threshold voltage
Drain-source on-state
resistance
Forward transconductance
CONDITIONS
V
GS
= 0 V; I
D
= 10
µA
V
DS
= V
GS
; I
D
= 1 mA
V
GS
= 10 V; I
D
= 120 mA
V
DS
= 25 V; I
D
= 120 mA
MIN.
100
1
-
-
-
-
-
-
V
GS
= 0 V; V
DS
= 25 V; f = 1 MHz
-
-
-
BSS123
TYP. MAX. UNIT
130
2
3.5
350
10
10
3
12
23
6
4
-
2.8
6
-
100
100
10
20
40
25
10
V
V
mS
nA
nA
ns
ns
pF
pF
pF
Zero gate voltage drain
V
DS
= 60 V; V
GS
= 0 V
current
Gate source leakage current V
GS
=
±20
V; V
DS
= 0 V
Turn-on time
Turn-off time
Input capacitance
Output capacitance
Feedback capacitance
V
DD
= 50 V; R
D
= 250
Ω;
V
GS
= 10 V;
R
G
= 50
Ω;
Resistive load
August 2000
2
Rev 1.000
Philips Semiconductors
Product specification
N-channel TrenchMOS transistor
Logic level FET
MECHANICAL DATA
Plastic surface mounted package; 3 leads
SOT23
BSS123
D
B
E
A
X
HE
v
M
A
3
Q
A
A1
1
e1
e
bp
2
w
M
B
detail X
Lp
c
0
1
scale
2 mm
DIMENSIONS (mm are the original dimensions)
UNIT
mm
A
1.1
0.9
A
1
max.
0.1
b
p
0.48
0.38
c
0.15
0.09
D
3.0
2.8
E
1.4
1.2
e
1.9
e
1
0.95
H
E
2.5
2.1
L
p
0.45
0.15
Q
0.55
0.45
v
0.2
w
0.1
OUTLINE
VERSION
SOT23
REFERENCES
IEC
JEDEC
EIAJ
EUROPEAN
PROJECTION
ISSUE DATE
97-02-28
Fig.1. SOT23 surface mounting package.
Notes
1. This product is supplied in anti-static packaging. The gate-source input must be protected against static
discharge during transport or handling.
2. Refer to SMD Footprint Design and Soldering Guidelines, Data Handbook SC18.
3. Epoxy meets UL94 V0 at 1/8".
August 2000
3
Rev 1.000
Philips Semiconductors
Product specification
N-channel TrenchMOS transistor
Logic level FET
DEFINITIONS
Data sheet status
Objective specification
Product specification
Limiting values
BSS123
This data sheet contains target or goal specifications for product development.
This data sheet contains final product specifications.
Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.
Limiting values are given in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one
or more of the limiting values may cause permanent damage to the device. These are stress ratings only and
operation of the device at these or at any other conditions above those given in the Characteristics sections of
this specification is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
Philips Electronics N.V. 2000
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the
copyright owner.
The information presented in this document does not form part of any quotation or contract, it is believed to be
accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any
consequence of its use. Publication thereof does not convey nor imply any license under patent or other
industrial or intellectual property rights.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices or systems where malfunction of these
products can be reasonably expected to result in personal injury. Philips customers using or selling these products
for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting
from such improper use or sale.
August 2000
4
Rev 1.000
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