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BTS410G

Description
Power Field-Effect Transistor, 0.22ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
CategoryDiscrete semiconductor    The transistor   
File Size129KB,8 Pages
ManufacturerSIEMENS
Websitehttp://www.infineon.com/
Download Datasheet Parametric Compare View All

BTS410G Overview

Power Field-Effect Transistor, 0.22ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

BTS410G Parametric

Parameter NameAttribute value
MakerSIEMENS
package instructionFLANGE MOUNT, R-PSFM-T5
Reach Compliance Codeunknown
ConfigurationSINGLE WITH BUILT-IN DIODE
Maximum drain-source on-resistance0.22 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
JESD-30 codeR-PSFM-T5
Number of components1
Number of terminals5
Operating modeENHANCEMENT MODE
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Polarity/channel typeN-CHANNEL
Certification statusNot Qualified
surface mountNO
Terminal formTHROUGH-HOLE
Terminal locationSINGLE
transistor applicationsSWITCHING
Transistor component materialsSILICON
This Material Copyrighted By Its Respective Manufacturer

BTS410G Related Products

BTS410G BTS410D BTS410F
Description Power Field-Effect Transistor, 0.22ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET Power Field-Effect Transistor, 0.22ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET Power Field-Effect Transistor, 0.22ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
Maker SIEMENS SIEMENS SIEMENS
package instruction FLANGE MOUNT, R-PSFM-T5 FLANGE MOUNT, R-PSFM-T5 FLANGE MOUNT, R-PSFM-T5
Reach Compliance Code unknown unknown unknown
Configuration SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE
Maximum drain-source on-resistance 0.22 Ω 0.22 Ω 0.22 Ω
FET technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
JESD-30 code R-PSFM-T5 R-PSFM-T5 R-PSFM-T5
Number of components 1 1 1
Number of terminals 5 5 5
Operating mode ENHANCEMENT MODE ENHANCEMENT MODE ENHANCEMENT MODE
Package body material PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR RECTANGULAR RECTANGULAR
Package form FLANGE MOUNT FLANGE MOUNT FLANGE MOUNT
Polarity/channel type N-CHANNEL N-CHANNEL N-CHANNEL
Certification status Not Qualified Not Qualified Not Qualified
surface mount NO NO NO
Terminal form THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE
Terminal location SINGLE SINGLE SINGLE
transistor applications SWITCHING SWITCHING SWITCHING
Transistor component materials SILICON SILICON SILICON
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