High voltage power switch. Designed for horizontal deflection output stage of CTV receivers and
high voltage, fast switching and industrial application
Features:
•
•
•
Collector-emitter sustaining voltage - 100 mA
V
CEO (sus)
= 400 V (minimum)
Optimum drive condition curves
TO-3
Dimensions
A
B
C
D
E
F
G
Minimum
37.75
19.28
7.96
11.18
25.20
0.92
1.38
29.9
16.64
3.88
10.67
Maximum
39.96
22.23
9.28
12.19
26.67
1.09
1.62
30.4
17.3
4.36
11.18
NPN
BUY69A
10 A
Silicon Power
Transistors
200 - 400 V
100 W
Pin 1. Base
2. Emitter
Collector (Case)
H
I
J
K
TO-3
Maximum Ratings
Characteristic
Collector-Emitter Voltage (V
BE
= 0)
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current-Continuous-Peak
Base Current-Peak
Total Power Dissipation at T
C
= 25°C
Derate above 25°C
Operating and Storage Junction Temperature Range
Dimensions : Millimetres
Symbol
V
CBS
V
CEO
V
EBO
I
C
I
CM
I
B
P
D
T
J
, T
STG
BUY69A
1,000
400
8
10
15
3
100
0.57
65 to +200
Unit
V
A
W
W / °C
°C
Thermal Characteristics
Characteristic
Thermal Resistance Junction to Case
Symbol
Rθjc
Maximum
1.75
Unit
°C / W
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www.newark.com
Page <1>
19/06/12 V1.1
Transistor
Power Derating
P
D
, Power Dissipation (W)
T
C
, Temperature (°C)
Electrical Characteristics
(T
C
= 25°C unless otherwise noted)
Symbol
Minimum
Maximum
Unit
Characteristic
Off Characteristics
Collector-Emitter Sustaining Voltage (1)
(l
C
= 100 mA, l
B
= 0)
Collector-Base Voltage
(l
C
= 1 mA, l
E
= 0)
Collector Cut off Current
(V
CE
= 1,000 V, V
BE
= 0)
Emitter-Base Cut off Current
(V
EB
= 8 V, I
C
= 0 )
On Characteristics (1)
DC Current Gain
(V
CE
= 10 V, I
C
= 2.5 A)
Collector-Emitter Saturation Voltage
(I
C
= 8 A, l
B
= 2.5 A)
Base-Emitter Saturation
(I
C
= 8 A, I
B
= 2.5 A)
Dynamic Characteristics
Current Gain-Bandwidth Product (2)
(I
C
= 500 mA, V
CE
= 10 V, f = 1 MHz)
BUY69A
V
CEO (sus)
V
CBO
I
CES
I
EBO
400
1,000
-
-
V
-
BUY69A
BUY69A
1
-
mA
h
FE
V
CE (sat)
V
BE (sat)
15
-
-
-
3.3
-
V
2.2
f
T
10
-
MHz
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www.newark.com
Page <2>
19/06/12 V1.1
Transistor
Switching Characteristics
Rise Time
Storage Time
Fall Time
(1) Pulse Test : Pulse Width = 300 µs, Duty Cycle
≤2%
(2) fT =
hfe•
ftest
V
CC
= 250 V, I
C
= 5 A
I
B1
= -I
B2
= 1 A
-
t
r
t
s
t
f
-
-
-
0.3
1.8
1
µs
Part Number Table
Description
Transistor, NPN, TO-3
Part Number
BUY69A
Important Notice :
This data sheet and its contents (the "Information") belong to the members of the Premier Farnell group of companies (the "Group") or are licensed to it. No licence is granted for the use of
it other than for information purposes in connection with the products to which it relates. No licence of any intellectual property rights is granted. The Information is subject to change without notice and replaces
all data sheets previously supplied. The Information supplied is believed to be accurate but the Group assumes no responsibility for its accuracy or completeness, any error in or omission from it or for any use
made of it. Users of this data sheet should check for themselves the Information and the suitability of the products for their purpose and not make any assumptions based on information included or omitted.
Liability for loss or damage resulting from any reliance on the Information or use of it (including liability resulting from negligence or where the Group was aware of the possibility of such loss or damage arising)
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