BC516J05Z datasheet, PDF - EEWORLD Datasheet

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BC516J05Z: DescriptionSmall Signal Bipolar Transistor, 1A I(C), 30V V(BR)CEO, 1-Element, PNP, Silicon, TO-92, 3 PIN; CategoryDiscrete semiconductor The transistor; File Size25KB，3 Pages; ManufacturerFairchild; Websitehttp://www.fairchildsemi.com/

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BC516J05Z Overview

Small Signal Bipolar Transistor, 1A I(C), 30V V(BR)CEO, 1-Element, PNP, Silicon, TO-92, 3 PIN

BC516J05Z Parametric

Parameter Name	Attribute value
Maker	Fairchild
Parts packaging code	TO-92
package instruction	CYLINDRICAL, O-PBCY-T3
Contacts	3
Reach Compliance Code	unknown
ECCN code	EAR99
Maximum collector current (IC)	1 A
Collector-emitter maximum voltage	30 V
Configuration	DARLINGTON
Minimum DC current gain (hFE)	30000
JESD-30 code	O-PBCY-T3
Number of components	1
Number of terminals	3
Maximum operating temperature	150 °C
Package body material	PLASTIC/EPOXY
Package shape	ROUND
Package form	CYLINDRICAL
Polarity/channel type	PNP
Certification status	Not Qualified
surface mount	NO
Terminal form	THROUGH-HOLE
Terminal location	BOTTOM
Transistor component materials	SILICON
Nominal transition frequency (fT)	200 MHz

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BC516

PNP Darlington Transistor

• This device is designed for applications reguiring extremely high

current gain at currents to 1mA.

• Sourced from process 61.

TO-92

1. Collector 2. Base 3. Emitter

Absolute Maximum Ratings

=25°C unless otherwise noted

Symbol

CEO

CBO

EBO

, T

STG

Parameter

Collector-Emitter Voltage

Collector-Base Voltage

Emitter-Base Voltage

Collector Current

Total Power Dissipation

- Continuous

= 25°c

Value

625

-55 ~ +150

Units

°C

Operating and Storage Junction Temperature Range

Electrical Characteristics

=25°C unless otherwise noted

Symbol

CEO

CBO

EBO

CBO

(sat)

(on)

Parameter

Collector-Emitter Breakdown Voltage

Collector-Base Breakdown Voltage

Emitter-Base Breakdown Voltage

Collector Cutoff Current

DC Current Gain

Collector-Emitter Saturation Voltage

Base-Emitter On Voltage

Current Gain Bandwidth Product (2)

Test Condition

= 2mA, I

= 0

= 100µA, I

= 0

= 10µA, I

= 0

= 30V, I

= 0

= 20mA, V

= 2V

= 100mA, I

= 0.1mA

= 10mA, V

= 5V

= 10mA, V

= 5V, f = 100MHz

200

30000

1.4

MHz

Min.

100

Typ.

Max.

Units

NOTES:

1. Pulse Test Pulse Width

≤

2. f

= Ih

I · f

test

Thermal Characteristics

=25°C unless otherwise noted

Symbol

θJA

θJC

Parameter

Thermal Resistance, Junction to Ambient

Thermal Resistance, Junction to Case

Max.

200

83.3

Units

°C/W

Rev. A, January 2002

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Description	Small Signal Bipolar Transistor, 1A I(C), 30V V(BR)CEO, 1-Element, PNP, Silicon, TO-92, 3 PIN	Small Signal Bipolar Transistor, 1A I(C), 30V V(BR)CEO, 1-Element, PNP, Silicon, TO-92	Small Signal Bipolar Transistor, 1A I(C), 30V V(BR)CEO, 1-Element, PNP, Silicon, TO-92	Small Signal Bipolar Transistor, 1A I(C), 30V V(BR)CEO, 1-Element, PNP, Silicon, TO-92, 3 PIN	TRANSISTOR 1000 mA, 30 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92, BIP General Purpose Small Signal	TRANSISTOR 1000 mA, 30 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92, BIP General Purpose Small Signal
Maker	Fairchild	Fairchild	Fairchild	Fairchild	Fairchild	Fairchild
package instruction	CYLINDRICAL, O-PBCY-T3	CYLINDRICAL, O-PBCY-T3	CYLINDRICAL, O-PBCY-T3	CYLINDRICAL, O-PBCY-T3	CYLINDRICAL, O-PBCY-T3	CYLINDRICAL, O-PBCY-T3
Reach Compliance Code	unknown	compliant	unknown	unknown	unknown	unknown
ECCN code	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99
Maximum collector current (IC)	1 A	1 A	1 A	1 A	1 A	1 A
Collector-emitter maximum voltage	30 V	30 V	30 V	30 V	30 V	30 V
Configuration	DARLINGTON	DARLINGTON	DARLINGTON	DARLINGTON	DARLINGTON	DARLINGTON
Minimum DC current gain (hFE)	30000	30000	30000	30000	30000	30000
JESD-30 code	O-PBCY-T3	O-PBCY-T3	O-PBCY-T3	O-PBCY-T3	O-PBCY-T3	O-PBCY-T3
Number of components	1	1	1	1	1	1
Number of terminals	3	3	3	3	3	3
Maximum operating temperature	150 °C	150 °C	150 °C	150 °C	150 °C	150 °C
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
Package shape	ROUND	ROUND	ROUND	ROUND	ROUND	ROUND
Package form	CYLINDRICAL	CYLINDRICAL	CYLINDRICAL	CYLINDRICAL	CYLINDRICAL	CYLINDRICAL
Polarity/channel type	PNP	PNP	PNP	PNP	PNP	PNP
Certification status	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified
surface mount	NO	NO	NO	NO	NO	NO
Terminal form	THROUGH-HOLE	THROUGH-HOLE	THROUGH-HOLE	THROUGH-HOLE	THROUGH-HOLE	THROUGH-HOLE
Terminal location	BOTTOM	BOTTOM	BOTTOM	BOTTOM	BOTTOM	BOTTOM
Transistor component materials	SILICON	SILICON	SILICON	SILICON	SILICON	SILICON
Nominal transition frequency (fT)	200 MHz	200 MHz	200 MHz	200 MHz	200 MHz	200 MHz
JEDEC-95 code	-	TO-92	TO-92	-	TO-92	TO-92

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