TM4EP64CJN-60 datasheet, PDF - EEWORLD Datasheet

TM4EP64CJN-60: Description4MX72 EDO DRAM MODULE, 60ns, PDMA168, MODULE-168; Categorystorage storage; File Size351KB，22 Pages; ManufacturerTexas Instruments; Websitehttp://www.ti.com.cn/

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TM4EP64CJN-60 Overview

4MX72 EDO DRAM MODULE, 60ns, PDMA168, MODULE-168

Parameter Name	Attribute value
Maker	Texas Instruments
Parts packaging code	DMA
package instruction	DIMM, DIMM168
Contacts	168
Reach Compliance Code	unknown
ECCN code	EAR99
access mode	SINGLE BANK PAGE BURST
Maximum access time	60 ns
Other features	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH/SELF REFRESH
I/O type	COMMON
JESD-30 code	R-PDMA-N168
JESD-609 code	e4
length	133.35 mm
memory density	301989888 bit
Memory IC Type	EDO DRAM MODULE
memory width	72
Number of functions	1
Number of ports	1
Number of terminals	168
word count	4194304 words
character code	4000000
Operating mode	SYNCHRONOUS
Maximum operating temperature	70 °C
Minimum operating temperature
organize	4MX72
Output characteristics	3-STATE
Package body material	PLASTIC/EPOXY
encapsulated code	DIMM
Encapsulate equivalent code	DIMM168
Package shape	RECTANGULAR
Package form	MICROELECTRONIC ASSEMBLY
power supply	3.3 V
Certification status	Not Qualified
refresh cycle	4096
Maximum seat height	25.53 mm
self refresh	NO
Maximum standby current	0.016 A
Maximum slew rate	1.44 mA
Maximum supply voltage (Vsup)	3.6 V
Minimum supply voltage (Vsup)	3 V
Nominal supply voltage (Vsup)	3.3 V
surface mount	NO
technology	MOS
Temperature level	COMMERCIAL
Terminal surface	GOLD
Terminal form	NO LEAD
Terminal pitch	1.27 mm
Terminal location	DUAL

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