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IRKH250-08PBF

Description
Silicon Controlled Rectifier, 555A I(T)RMS, 800V V(DRM), 800V V(RRM), 1 Element, POWER, MAGN-A-PAK-5
CategoryAnalog mixed-signal IC    Trigger device   
File Size33KB,1 Pages
ManufacturerInternational Rectifier ( Infineon )
Websitehttp://www.irf.com/
Environmental Compliance  
Download Datasheet Parametric View All

IRKH250-08PBF Overview

Silicon Controlled Rectifier, 555A I(T)RMS, 800V V(DRM), 800V V(RRM), 1 Element, POWER, MAGN-A-PAK-5

IRKH250-08PBF Parametric

Parameter NameAttribute value
Is it lead-free?Lead free
Is it Rohs certified?conform to
MakerInternational Rectifier ( Infineon )
package instructionFLANGE MOUNT, R-PUFM-D3
Contacts5
Reach Compliance Codecompliant
Other featuresUL APPROVED
Shell connectionISOLATED
Nominal circuit commutation break time150 µs
ConfigurationSINGLE WITH BUILT-IN FREE-WHEELING DIODE
Critical rise rate of minimum off-state voltage1000 V/us
Maximum DC gate trigger current200 mA
Maximum DC gate trigger voltage3 V
Maximum holding current500 mA
JESD-30 codeR-PUFM-D3
Number of components1
Number of terminals3
Maximum operating temperature130 °C
Minimum operating temperature-40 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Peak Reflow Temperature (Celsius)260
Certification statusNot Qualified
Maximum rms on-state current555 A
Maximum repetitive peak off-state leakage current50000 µA
Off-state repetitive peak voltage800 V
Repeated peak reverse voltage800 V
surface mountNO
Terminal formSOLDER LUG
Terminal locationUPPER
Maximum time at peak reflow temperature40
Trigger device typeSCR
Common measurement methods
Common measurement methods[size=3]1. Gain and gain adjustable range[/size] [font=宋体][size=24pt][size=3]2. Out-of-band suppression and selectivity3. Bandwidth and in-band fluctuation4. Third-order inte...
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