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IRKH250-12D20

Description
Silicon Controlled Rectifier, 555A I(T)RMS, 250000mA I(T), 1200V V(DRM), 1200V V(RRM), 1 Element, MAGN-A-PAK-5
CategoryAnalog mixed-signal IC    Trigger device   
File Size171KB,7 Pages
ManufacturerVishay
Websitehttp://www.vishay.com
Download Datasheet Parametric View All

IRKH250-12D20 Overview

Silicon Controlled Rectifier, 555A I(T)RMS, 250000mA I(T), 1200V V(DRM), 1200V V(RRM), 1 Element, MAGN-A-PAK-5

IRKH250-12D20 Parametric

Parameter NameAttribute value
Is it lead-free?Contains lead
Is it Rohs certified?incompatible
MakerVishay
package instructionFLANGE MOUNT, R-XUFM-X5
Contacts5
Reach Compliance Codecompliant
Other featuresUL APPROVED
Shell connectionISOLATED
ConfigurationSINGLE WITH BUILT-IN DIODE
Maximum DC gate trigger current200 mA
Maximum DC gate trigger voltage4 V
Quick connection descriptionG-GR
Description of screw terminalsA-K-AK
Maximum holding current500 mA
JESD-30 codeR-XUFM-X5
Maximum leakage current50 mA
Humidity sensitivity level1
On-state non-repetitive peak current8900 A
Number of components1
Number of terminals5
Maximum on-state current250000 A
Maximum operating temperature130 °C
Minimum operating temperature-40 °C
Package body materialUNSPECIFIED
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Peak Reflow Temperature (Celsius)225
Certification statusNot Qualified
Maximum rms on-state current555 A
Off-state repetitive peak voltage1200 V
Repeated peak reverse voltage1200 V
surface mountNO
Terminal formUNSPECIFIED
Terminal locationUPPER
Maximum time at peak reflow temperatureNOT SPECIFIED
Trigger device typeSCR
Bulletin I27102 rev. C 05/02
IRK. SERIES
SCR / SCR and SCR / DIODE
Features
High voltage
Electrically isolated base plate
3000 V
RMS
isolating voltage
Industrial standard package
Simplified mechanical designs, rapid assembly
High surge capability
Large creepage distances
UL E78996 approved
MAGN-A-pak Power Modules
170A
230A
250A
Description
This new IRK serie of MAGN-A-paks modules uses high
voltage power thyristor/thyristor and thyristor/diode in
seven basic configurations. The semiconductors are
electrically isolated from the metal base, allowing com-
mon heatsinks and compact assemblies to be built. They
can be interconnected to form single phase or three
phase bridges or as AC-switches when modules are
connected in anti-parallel mode.
These modules are intended for general purpose appli-
cations such as battery chargers, welders and plating
equipment and where high voltage and high current are
required (motor drives, U.P.S., etc.).
Major Ratings and Characteristics
Parameters
I
T(AV)
@ 85°C
I
T(RMS)
I
TSM
I
2
t
@ 50Hz
@ 60Hz
@ 50Hz
@ 60Hz
I
2
√t
V
DRM
/ V
RRM
T
J
range
IRK.170..
170
377
5100
5350
131
119
1310
IRK.230.. IRK.250..
Units
230
510
7500
7850
280
256
2800
250
555
8500
8900
361
330
3610
A
A
A
A
KA
2
s
KA
2
s
KA
2
√s
V
o
Up to1600 Up to 2000 Up to1600
-40 to 130
C
Document Number: 93745
www.vishay.com
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