BSS92E-6325 datasheet, PDF - EEWORLD Datasheet

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BSS92E-6325: Description150mA, 240V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-92, TO-92, 3 PIN; CategoryDiscrete semiconductor The transistor; File Size307KB，7 Pages; ManufacturerSIEMENS; Websitehttp://www.infineon.com/

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BSS92E-6325 Overview

150mA, 240V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-92, TO-92, 3 PIN

BSS92E-6325 Parametric

Parameter Name	Attribute value
Maker	SIEMENS
Parts packaging code	TO-92
package instruction	CYLINDRICAL, O-PBCY-T3
Contacts	3
Reach Compliance Code	unknown
Configuration	SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage	240 V
Maximum drain current (ID)	0.15 A
Maximum drain-source on-resistance	20 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR
JEDEC-95 code	TO-92
JESD-30 code	O-PBCY-T3
Number of components	1
Number of terminals	3
Operating mode	ENHANCEMENT MODE
Package body material	PLASTIC/EPOXY
Package shape	ROUND
Package form	CYLINDRICAL
Polarity/channel type	P-CHANNEL
Certification status	Not Qualified
surface mount	NO
Terminal form	THROUGH-HOLE
Terminal location	BOTTOM
Transistor component materials	SILICON

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	BSS92E-6325	BSS92E6288	BSS92E6325	BSS92E-6288	BSS92E6296
Description	150mA, 240V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-92, TO-92, 3 PIN	Small Signal Field-Effect Transistor, 0.15A I(D), 240V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-92, TO-92, 3 PIN	Small Signal Field-Effect Transistor, 0.15A I(D), 240V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-92, TO-92, 3 PIN	150mA, 240V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-92, TO-92, 3 PIN	Small Signal Field-Effect Transistor, 0.15A I(D), 240V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-92
Maker	SIEMENS	SIEMENS	SIEMENS	SIEMENS	SIEMENS
package instruction	CYLINDRICAL, O-PBCY-T3	CYLINDRICAL, O-PBCY-W3	CYLINDRICAL, O-PBCY-W3	TO-92, 3 PIN	CYLINDRICAL, O-PBCY-W3
Reach Compliance Code	unknown	unknown	unknown	unknown	unknown
Configuration	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage	240 V	240 V	240 V	240 V	240 V
Maximum drain current (ID)	0.15 A	0.15 A	0.15 A	0.15 A	0.15 A
Maximum drain-source on-resistance	20 Ω	20 Ω	20 Ω	20 Ω	20 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR
JEDEC-95 code	TO-92	TO-92	TO-92	TO-92	TO-92
JESD-30 code	O-PBCY-T3	O-PBCY-W3	O-PBCY-W3	O-PBCY-T3	O-PBCY-W3
Number of components	1	1	1	1	1
Number of terminals	3	3	3	3	3
Operating mode	ENHANCEMENT MODE	ENHANCEMENT MODE	ENHANCEMENT MODE	ENHANCEMENT MODE	ENHANCEMENT MODE
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
Package shape	ROUND	ROUND	ROUND	ROUND	ROUND
Package form	CYLINDRICAL	CYLINDRICAL	CYLINDRICAL	CYLINDRICAL	CYLINDRICAL
Polarity/channel type	P-CHANNEL	P-CHANNEL	P-CHANNEL	P-CHANNEL	P-CHANNEL
Certification status	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified
surface mount	NO	NO	NO	NO	NO
Terminal form	THROUGH-HOLE	THROUGH-HOLE	THROUGH-HOLE	THROUGH-HOLE	WIRE
Terminal location	BOTTOM	BOTTOM	BOTTOM	BOTTOM	BOTTOM
Transistor component materials	SILICON	SILICON	SILICON	SILICON	SILICON
Parts packaging code	TO-92	TO-92	TO-92	TO-92	-
Contacts	3	3	3	3	-
ECCN code	-	EAR99	EAR99	-	EAR99
Other features	-	LOGIC LEVEL COMPATIBLE	LOGIC LEVEL COMPATIBLE	-	LOGIC LEVEL COMPATIBLE
Maximum feedback capacitance (Crss)	-	15 pF	15 pF	-	15 pF
transistor applications	-	SWITCHING	SWITCHING	-	SWITCHING

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