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BCR141E6327XT

Description
Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon
CategoryDiscrete semiconductor    The transistor   
File Size115KB,4 Pages
ManufacturerInfineon
Websitehttp://www.infineon.com/
Environmental Compliance  
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BCR141E6327XT Overview

Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon

BCR141E6327XT Parametric

Parameter NameAttribute value
Is it lead-free?Lead free
MakerInfineon
package instructionSMALL OUTLINE, R-PDSO-G3
Reach Compliance Codeunknown
ECCN codeEAR99
Other featuresBUILT-IN BIAS RESISTOR RATIO IS 1
Maximum collector current (IC)0.1 A
Collector-emitter maximum voltage50 V
ConfigurationSINGLE WITH BUILT-IN RESISTOR
Minimum DC current gain (hFE)50
JESD-30 codeR-PDSO-G3
JESD-609 codee3
Number of components1
Number of terminals3
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)260
Polarity/channel typeNPN
Certification statusNot Qualified
surface mountYES
Terminal surfaceMATTE TIN
Terminal formGULL WING
Terminal locationDUAL
Maximum time at peak reflow temperature40
transistor applicationsSWITCHING
Transistor component materialsSILICON
Nominal transition frequency (fT)130 MHz

BCR141E6327XT Related Products

BCR141E6327XT
Description Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon
Is it lead-free? Lead free
Maker Infineon
package instruction SMALL OUTLINE, R-PDSO-G3
Reach Compliance Code unknown
ECCN code EAR99
Other features BUILT-IN BIAS RESISTOR RATIO IS 1
Maximum collector current (IC) 0.1 A
Collector-emitter maximum voltage 50 V
Configuration SINGLE WITH BUILT-IN RESISTOR
Minimum DC current gain (hFE) 50
JESD-30 code R-PDSO-G3
JESD-609 code e3
Number of components 1
Number of terminals 3
Package body material PLASTIC/EPOXY
Package shape RECTANGULAR
Package form SMALL OUTLINE
Peak Reflow Temperature (Celsius) 260
Polarity/channel type NPN
Certification status Not Qualified
surface mount YES
Terminal surface MATTE TIN
Terminal form GULL WING
Terminal location DUAL
Maximum time at peak reflow temperature 40
transistor applications SWITCHING
Transistor component materials SILICON
Nominal transition frequency (fT) 130 MHz
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