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BC327-16BK

Description
Small Signal Bipolar Transistor, 0.8A I(C), 45V V(BR)CEO, 1-Element, PNP, Silicon, TO-92, ROHS COMPLIANT, PLASTIC PACKAGE-3
CategoryDiscrete semiconductor    The transistor   
File Size89KB,2 Pages
ManufacturerDIOTEC
Websitehttp://www.diotec.com/
Environmental Compliance
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BC327-16BK Overview

Small Signal Bipolar Transistor, 0.8A I(C), 45V V(BR)CEO, 1-Element, PNP, Silicon, TO-92, ROHS COMPLIANT, PLASTIC PACKAGE-3

BC327-16BK Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerDIOTEC
Parts packaging codeTO-92
package instructionCYLINDRICAL, O-PBCY-W3
Contacts3
Reach Compliance Codecompliant
ECCN codeEAR99
Maximum collector current (IC)0.8 A
Collector-emitter maximum voltage45 V
ConfigurationSINGLE
Minimum DC current gain (hFE)60
JEDEC-95 codeTO-92
JESD-30 codeO-PBCY-W3
Number of components1
Number of terminals3
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeROUND
Package formCYLINDRICAL
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typePNP
Certification statusNot Qualified
surface mountNO
Terminal formWIRE
Terminal locationBOTTOM
Maximum time at peak reflow temperatureNOT SPECIFIED
Transistor component materialsSILICON
Nominal transition frequency (fT)100 MHz
BC327-xBK / BC328-xBK
BC327-xBK / BC328-xBK
PNP
Version 2010-06-23
General Purpose Si-Epitaxial Planar Transistors
Si-Epitaxial Planar-Transistoren für universellen Einsatz
Power dissipation
Verlustleistung
Plastic case
Kunststoffgehäuse
PNP
625 mW
TO-92
(10D3)
0.18 g
4.6
4.6
±0.1
±0.1
min 12.5
Weight approx. – Gewicht ca.
Plastic material has UL classification 94V-0
Gehäusematerial UL94V-0 klassifiziert
Special packaging bulk
Sonder-Lieferform Schüttgut
CBE
2 x 1.27
Dimensions - Maße [mm]
Maximum ratings (T
A
= 25°C)
Collector-Emitter-volt. – Kollektor-Emitter-Spannung
Collector-Emitter-volt. – Kollektor-Emitter-Spannung
Emitter-Base-voltage – Emitter-Basis-Spannung
Power dissipation – Verlustleistung
Collector current – Kollektorstrom (dc)
Peak Collector current – Kollektor-Spitzenstrom
Base current – Basisstrom
Junction temperature – Sperrschichttemperatur
Storage temperature – Lagerungstemperatur
E-B short
B open
C open
- V
CES
- V
CEO
- V
EBO
P
tot
- I
C
- I
CM
- I
B
T
j
T
S
Grenzwerte (T
A
= 25°C)
BC327
50 V
45 V
5V
625 mW
1
)
800 mA
1A
100 mA
-55...+150°C
-55…+150°C
BC328
30 V
25 V
Characteristics (T
j
= 25°C)
Min.
DC current gain – Kollektor-Basis-Stromverhältnis
2
)
- V
CE
= 1 V, - I
C
= 100 mA
Group -16
Group -25
Group -40
Group -16
Group -25
Group -40
h
FE
h
FE
h
FE
h
FE
h
FE
h
FE
- V
CEsat
100
160
250
60
100
170
Kennwerte (T
j
= 25°C)
Typ.
160
250
400
130
200
320
Max.
250
400
630
0.7 V
- V
CE
= 1 V, - I
C
= 300 mA
Collector-Emitter saturation voltage – Kollektor-Emitter-Sättigungsspg.
2
)
- I
C
= 500 mA, - I
B
= 50 mA
1
2
Valid, if leads are kept at ambient temperature at a distance of 2 mm from case
Gültig wenn die Anschlussdrähte in 2 mm Abstand vom Gehäuse auf Umgebungstemperatur gehalten werden
Tested with pulses t
p
= 300 µs, duty cycle ≤ 2% – Gemessen mit Impulsen t
p
= 300 µs, Schaltverhältnis ≤ 2%
http://www.diotec.com/
© Diotec Semiconductor AG
1

BC327-16BK Related Products

BC327-16BK BC327-25BK BC327-40BK BC328-25BK BC328-40BK BC328-16BK
Description Small Signal Bipolar Transistor, 0.8A I(C), 45V V(BR)CEO, 1-Element, PNP, Silicon, TO-92, ROHS COMPLIANT, PLASTIC PACKAGE-3 Small Signal Bipolar Transistor, 0.8A I(C), 45V V(BR)CEO, 1-Element, PNP, Silicon, TO-92, ROHS COMPLIANT, PLASTIC PACKAGE-3 Small Signal Bipolar Transistor, 0.8A I(C), 45V V(BR)CEO, 1-Element, PNP, Silicon, TO-92, ROHS COMPLIANT, PLASTIC PACKAGE-3 Small Signal Bipolar Transistor, 0.8A I(C), 25V V(BR)CEO, 1-Element, PNP, Silicon, TO-92, ROHS COMPLIANT, PLASTIC PACKAGE-3 Small Signal Bipolar Transistor, 0.8A I(C), 25V V(BR)CEO, 1-Element, PNP, Silicon, TO-92, ROHS COMPLIANT, PLASTIC PACKAGE-3 Small Signal Bipolar Transistor, 0.8A I(C), 25V V(BR)CEO, 1-Element, PNP, Silicon, TO-92, ROHS COMPLIANT, PLASTIC PACKAGE-3
Is it Rohs certified? conform to conform to conform to conform to conform to conform to
Parts packaging code TO-92 TO-92 TO-92 TO-92 TO-92 TO-92
package instruction CYLINDRICAL, O-PBCY-W3 CYLINDRICAL, O-PBCY-W3 CYLINDRICAL, O-PBCY-W3 CYLINDRICAL, O-PBCY-W3 CYLINDRICAL, O-PBCY-W3 CYLINDRICAL, O-PBCY-W3
Contacts 3 3 3 3 3 3
Reach Compliance Code compliant compli compliant compliant compliant compliant
ECCN code EAR99 EAR99 EAR99 EAR99 EAR99 EAR99
Maximum collector current (IC) 0.8 A 0.8 A 0.8 A 0.8 A 0.8 A 0.8 A
Collector-emitter maximum voltage 45 V 45 V 45 V 25 V 25 V 25 V
Configuration SINGLE SINGLE SINGLE SINGLE SINGLE SINGLE
Minimum DC current gain (hFE) 60 100 170 100 170 60
JEDEC-95 code TO-92 TO-92 TO-92 TO-92 TO-92 TO-92
JESD-30 code O-PBCY-W3 O-PBCY-W3 O-PBCY-W3 O-PBCY-W3 O-PBCY-W3 O-PBCY-W3
Number of components 1 1 1 1 1 1
Number of terminals 3 3 3 3 3 3
Maximum operating temperature 150 °C 150 °C 150 °C 150 °C 150 °C 150 °C
Package body material PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
Package shape ROUND ROUND ROUND ROUND ROUND ROUND
Package form CYLINDRICAL CYLINDRICAL CYLINDRICAL CYLINDRICAL CYLINDRICAL CYLINDRICAL
Peak Reflow Temperature (Celsius) NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED
Polarity/channel type PNP PNP PNP PNP PNP PNP
Certification status Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified
surface mount NO NO NO NO NO NO
Terminal form WIRE WIRE WIRE WIRE WIRE WIRE
Terminal location BOTTOM BOTTOM BOTTOM BOTTOM BOTTOM BOTTOM
Maximum time at peak reflow temperature NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED
Transistor component materials SILICON SILICON SILICON SILICON SILICON SILICON
Nominal transition frequency (fT) 100 MHz 100 MHz 100 MHz 100 MHz 100 MHz 100 MHz
Maker DIOTEC - DIOTEC DIOTEC DIOTEC DIOTEC
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