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20CTQ150STRRPBF

Description
10 A, 150 V, SILICON, RECTIFIER DIODE
CategoryDiscrete semiconductor    diode   
File Size301KB,8 Pages
ManufacturerInternational Rectifier ( Infineon )
Websitehttp://www.irf.com/
Environmental Compliance
Download Datasheet Parametric View All

20CTQ150STRRPBF Overview

10 A, 150 V, SILICON, RECTIFIER DIODE

20CTQ150STRRPBF Parametric

Parameter NameAttribute value
Is it lead-free?Lead free
Is it Rohs certified?conform to
MakerInternational Rectifier ( Infineon )
Parts packaging codeTO-263
package instructionR-PSSO-G2
Contacts3
Reach Compliance Codecompliant
ECCN codeEAR99
Other featuresFREE WHEELING DIODE, HIGH RELIABILITY
applicationGENERAL PURPOSE
Shell connectionCATHODE
ConfigurationCOMMON CATHODE, 2 ELEMENTS
Diode component materialsSILICON
Diode typeRECTIFIER DIODE
Maximum forward voltage (VF)0.66 V
JESD-30 codeR-PSSO-G2
JESD-609 codee3
Humidity sensitivity level1
Maximum non-repetitive peak forward current1030 A
Number of components2
Phase1
Number of terminals2
Maximum operating temperature175 °C
Maximum output current10 A
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)260
Certification statusNot Qualified
Maximum repetitive peak reverse voltage150 V
surface mountYES
technologySCHOTTKY
Terminal surfaceMATTE TIN OVER NICKEL
Terminal formGULL WING
Terminal locationSINGLE
Maximum time at peak reflow temperature30
Base Number Matches1
Bulletin PD-20648 rev. C 09/04
20CTQ150
20CTQ150S
20CTQ150-1
SCHOTTKY RECTIFIER
20 Amp
Major Ratings and Characteristics
Characteristics
I
F(AV)
Rectangular
waveform
V
RRM
I
FSM
@ tp = 5 µs sine
V
F
T
J
@ 10 Apk, T
J
= 125°C
(per leg)
range
Description/ Features
Units
A
V
A
V
This center tap Schottky ectifier has been optimized for low
reverse leakage at high temperature. The proprietary barrier
technology allows for reliable operation up to 175° C junction
temperature. Typical applications are in switching power
supplies, converters, free-wheeling diodes, and reverse bat-
tery protection.
175° C T
J
operation
Center tap configuration
Low forward voltage drop
High purity, high temperature epoxy encapsulation for
enhanced mechanical strength and moisture resistance
High frequency operation
Guard ring for enhanced ruggedness and long term
reliability
Values
20
150
1030
0.66
- 55 to 175
°C
Case Styles
20CTQ150
20CTQ150S
20CTQ150-1
Base
Common
Cathode
2
Base
Common
Cathode
2
Base
Common
Cathode
2
1
Anode
2
Common
Cathode
3
1
Anode
Anode
2
Common
Cathode
3
1
Anode
Anode
2
Common
Cathode
3
Anode
TO-220AB
D
2
PAK
TO-262
www.irf.com
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