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20CTQ150TRR

Description
10 A, 150 V, SILICON, RECTIFIER DIODE, TO-220AB
Categorysemiconductor    Discrete semiconductor   
File Size301KB,8 Pages
ManufacturerInternational Rectifier ( Infineon )
Websitehttp://www.irf.com/
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20CTQ150TRR Overview

10 A, 150 V, SILICON, RECTIFIER DIODE, TO-220AB

Bulletin PD-20648 rev. C 09/04
20CTQ150
20CTQ150S
20CTQ150-1
SCHOTTKY RECTIFIER
20 Amp
Major Ratings and Characteristics
Characteristics
I
F(AV)
Rectangular
waveform
V
RRM
I
FSM
@ tp = 5 µs sine
V
F
T
J
@ 10 Apk, T
J
= 125°C
(per leg)
range
Description/ Features
Units
A
V
A
V
This center tap Schottky ectifier has been optimized for low
reverse leakage at high temperature. The proprietary barrier
technology allows for reliable operation up to 175° C junction
temperature. Typical applications are in switching power
supplies, converters, free-wheeling diodes, and reverse bat-
tery protection.
175° C T
J
operation
Center tap configuration
Low forward voltage drop
High purity, high temperature epoxy encapsulation for
enhanced mechanical strength and moisture resistance
High frequency operation
Guard ring for enhanced ruggedness and long term
reliability
Values
20
150
1030
0.66
- 55 to 175
°C
Case Styles
20CTQ150
20CTQ150S
20CTQ150-1
Base
Common
Cathode
2
Base
Common
Cathode
2
Base
Common
Cathode
2
1
Anode
2
Common
Cathode
3
1
Anode
Anode
2
Common
Cathode
3
1
Anode
Anode
2
Common
Cathode
3
Anode
TO-220AB
D
2
PAK
TO-262
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