HMPP-386x Series
Data Sheet
MiniPak Surface Mount RF PIN Diodes
Description/Applications
These ultra-miniature products represent the blending of
Avago Technologies’ proven semiconductor and the latest
in leadless packaging technology.
The HMPP-386x series of general purpose PIN diodes are
designed for two classes of applications. The first is attenu-
ators where current consumption is the most important
design consideration. The second application for this
series of diodes is in switches where low capacitance with
no reverse bias is the driving issue for the designer.
The low dielectric relaxation frequency of the HMPP-386x
insures that low capacitance can be reached at zero volts
reverse bias at frequencies above 1 GHz, making this PIN
diode ideal for hand held applications.
Low junction capacitance of the PIN diode chip, combined
with ultra low package parasitics, mean that these products
may be used at frequencies which are higher than the upper
limit for conventional PIN diodes.
Note that Avago’s manufacturing techniques assure that
dice packaged in pairs are taken from adjacent sites on
the wafer, assuring the highest degree of match.
Minipak 1412 is a ceramic based package, while Minipak
QFN is a leadframe based package.
Features
•
Surface mount MiniPak package
•
Better thermal conductivity for higher power dissipa-
tion
•
Single and dual versions
•
Matched diodes for consistent performance
•
Low capacitance at zero volts
•
Low resistance
•
Low FIT (Failure in Time) rate*
•
Six-sigma quality level
* For more information, see the Surface Mount Schottky Reliability
Data Sheet.
Pin Connections and Package Marking
3
AA
4
2
1
Product code
Date code
Package Lead Code Identification (Top View)
Single
3
2
#0
(Minipak 1412)
Anti-parallel
3
2
4
1
3
2
4
1
3
2
#2
(Minipak 1412)
Parallel
4
1
Anti-parallel
4
1
3
2
#5
(Minipak 1412)
Parallel
4
1
Notes:
1. Package marking provides orientation and identification.
2. See “Electrical Specifications” for appropriate package marking.
#3
(Minipak QFN)
[Under Development]
#4
(Minipak QFN)
[Under Development]
HMPP-386x Series Absolute Maximum Ratings
[1]
,
T
c
= 25°c
Symbol
I
f
P
IV
T
j
T
stg
θ
jc
Parameter
Forward current (1 µs pulse)
Peak Inverse Voltage
Junction Temperature
Storage Temperature
Thermal Resistance
[2]
Units
Amp
V
°c
°c
°c/W
MiniPak 141 /
MiniPak QFN
1
100
150
-65 to +150
150
Notes:
1. Operation in excess of any one of these
conditions may result in permanent dam-
age to the device.
2. T
c
= +25°c, where T
c
is defined to be the
temperature at the package pins where
contact is made to the circuit board.
ESD WARNING:
Handling Precautions Should Be Taken To Avoid
Static Discharge.
MiniPak141
Electrical Specifications,
T
c
= +25°c, each diode
Part Number
HMPP-
3860
3862
3865
Test conditions
Package
Marking Code
H
F
E
Lead Code
0
2
5
Configuration
Single
Anti-parallel
Parallel
Minimum Breakdown
Voltage (V)
50
Typical Series
Resistance (Ω)
3.0/1.5*
V
R
= V
BR
Measure
I
R
≤ 10 µA
I
F
= 10 mA
f = 100 MHz
*I
F
= 100 mA
MiniPak141
Typical Parameters,
T
c
= +25°c
Part Number
HMPP-
3860
3862
3865
Test conditions
Total Resistance
R
T
(Ω)
22
Carrier Lifetime
τ
(ns)
500
Reverse Recovery Time
T
rr
(ns)
80
Total Capacitance
C
T
(pF)
0.20
I
F
= 1 mA
f = 100 MHz
I
F
= 50 mA
T
R
= 250 mA
V
R
= 10 V
I
F
= 20 mA
90% Recovery
V
R
= 50V
f = 1 MHz
MiniPak QFN
Electrical Specifications, T
C
= +25°C, each diode
Part Number
HMPP-
3863
3864
Test conditions
Package
Marking Code
U
W
Lead Code
3
4
Configuration
Anti-parallel
Parallel
Minimum Breakdown
Voltage (V)
50
V
R
= V
BR
Measure
I
R
≤ 10µA
Typical Series
Resistance (Ω)
2.5/1.0*
I
F
=10mA
f=100MHz
*I
F
=100mA
MiniPak QFN
Typical Parameters, T
C
= +25°C
Part Number
HMPP-
3863
3864
Test conditions
Total Resistance
R
T
(Ω)
20
I
F
=1mA
f = 100MHz
Carried Lifetime
τ
(ns)
500
I
F
= 50mA
T
R
= 250 mA
Reverse Recovery Time
T
rr
(ns)
80
V
R
= 10V
I
F
= 20mA
90% Recovery
Total Capacitance
C
T
(pF)
0.13
V
R
= 50V
f = 1MHz
MiniPak 141 HMPP-386x Series Typical Performance
T
c
= +25
°c
(unless otherwise noted), each diode
0.35
1000
TOTAL CAPACITANCE (pF)
RF RESISTANCE (OHMS)
0.30
1 MHz
0.25
100 MHz
0.20
1 GHz
100
INPUT INTERCEPT POINT (dBm)
T
A
= +85 C
T
A
= +25 C
T
A
= –55 C
120
Diode Mounted as a
Series Switch in a
115
50 Microstrip and
Tested at 123 MHz
110
Intercept point
will be higher
at higher
frequencies
105
100
95
90
85
1
10
0.15
0
2
4
6
8
10 12 14 16 18 20
1
0.01
0.1
1
10
100
10
I
F
– FORWARD BIAS CURRENT (mA)
30
REVERSE VOLTAGE (V)
BIAS CURRENT (mA)
Figure 1. RF Capacitance vs. Reverse Bias.
Figure 2. Typical RF Resistance vs. Forward Bias
Current.
Figure 3. 2nd Harmonic Input Intercept Point
vs. Forward Bias Current for Switch Diodes.
1000
100
T
rr
– REVERSE RECOVERY TIME (ns)
I
F
– FORWARD CURRENT (mA)
10
V
R
= 5 V
100
V
R
= 10 V
V
R
= 20 V
1
0.1
125 C
0
0.2
0.4
25 C
0.6
–50 C
0.8
1.0
1.2
10
10
20
FORWARD CURRENT (mA)
30
0.01
V
F
– FORWARD VOLTAGE (mA)
Figure 4. Reverse Recovery Time vs. Forward
Current for Various Reverse Voltages.
Figure 5. Forward Current vs. Forward
Voltage.
3
MiniPak QFN HMPP-386x Series Typical Performance
T
c
= +25
°c
(unless otherwise noted), each diode
0.30
0.25
TOTAL CAPACITANCE (pF)
0.20
0.15
0.10
30MHz
0.05
0.00
1MHz
RF RESISTANCE (OHMS)
1000
120
INPUT INTERCEPT POINT (dBm)
T
A
= +85°C
T
A
= +25°C
T
A
= -55°C
100
Diode Mounted as a
Series Switch in a
115
50 Microstrip and
Tested at 123 MHz
110
Intercept point
will be higher
at higher
frequencies
105
100
95
90
85
1
10
1
0
2
4
6 8 10 12 14 16 18
REVERSE VOLTAGE (V)
20
0.1
0.01
0.1
1
10
BIAS CURRENT (mA)
100
10
I
F
– FORWARD BIAS CURRENT (mA)
30
Figure 6. RF Capacitance vs. Reverse Bias
Figure 7. Typical RF Resistance vs. Forward Bias Current
Figure 8. nd Harmonic Input Intercept Point vs.
Forward Bias Current for Switch Diodes
1000
T
rr
– REVERSE RECOVERY TIME (ns)
I
F
- FORWARD CURRENT (mA)
100
10
V
R
= 5V
100
V
R
= 10V
V
R
= 20V
1
0.1
10
10
20
FORWARD CURRENT (mA)
30
0.01
125°C
25°C
- 50°C
0
0.2
0.4
0.6
0.8
1
V
F
- FORWARD VOLTAGE (V)
1.2
Figure 9. Reverse Recovery Time vs. Forward Current
for Various Reverse Voltages.
Figure 10. Forward Current vs. Forward Voltage.
4
Typical Applications
RF COMMON
RF COMMON
2
1
RF 1
3
4
RF 2
RF 1
2
1
2
1
3
4
3
4
RF 2
BIAS 1
BIAS 2
BIAS
Figure 11. Simple SPDT Switch Using Only Positive Bias.
Figure 1. High Isolation SPDT Switch Using Dual Bias.
RF COMMON
VARIABLE BIAS
3
4
1
1
4
2
4
3
RF 1
2
4
1
3
1
2
3
2
4
1
RF 2
INPUT
2
3
RF IN/OUT
FIXED
BIAS
VOLTAGE
BIAS
Figure 9.
Four Diode
Attenuator. See AN1048 for
for details.
Figure 14.
Four Diode p
π
Attenuator. See AN1048
details.
Figure 13. Very High Isolation SPDT Switch, Dual Bias.
BIAS
3
2
4
1
3
2
4
1
Figure 1. High Isolation SPST Switch (Repeat Cells as Required).
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