BSS63RTA datasheet, PDF - EEWORLD Datasheet

BSS63RTA: DescriptionSmall Signal Bipolar Transistor, 0.1A I(C), 100V V(BR)CEO, 1-Element, PNP, Silicon; CategoryDiscrete semiconductor The transistor; File Size24KB，1 Pages; ManufacturerZetex Semiconductors; Websitehttp://www.zetex.com/

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BSS63RTA Overview

Small Signal Bipolar Transistor, 0.1A I(C), 100V V(BR)CEO, 1-Element, PNP, Silicon

Parameter Name	Attribute value
Maker	Zetex Semiconductors
package instruction	SMALL OUTLINE, R-PDSO-G3
Reach Compliance Code	unknown
ECCN code	EAR99
Maximum collector current (IC)	0.1 A
Collector-emitter maximum voltage	100 V
Configuration	SINGLE
Minimum DC current gain (hFE)	30
JESD-30 code	R-PDSO-G3
Number of components	1
Number of terminals	3
Maximum operating temperature	150 °C
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Polarity/channel type	PNP
Certification status	Not Qualified
surface mount	YES
Terminal form	GULL WING
Terminal location	DUAL
Transistor component materials	SILICON
Nominal transition frequency (fT)	85 MHz
VCEsat-Max	0.25 V

	BSS63RTA	BSS63RTC
Description	Small Signal Bipolar Transistor, 0.1A I(C), 100V V(BR)CEO, 1-Element, PNP, Silicon	Small Signal Bipolar Transistor, 0.1A I(C), 100V V(BR)CEO, 1-Element, PNP, Silicon
Maker	Zetex Semiconductors	Zetex Semiconductors
package instruction	SMALL OUTLINE, R-PDSO-G3	SMALL OUTLINE, R-PDSO-G3
Reach Compliance Code	unknown	unknown
ECCN code	EAR99	EAR99
Maximum collector current (IC)	0.1 A	0.1 A
Collector-emitter maximum voltage	100 V	100 V
Configuration	SINGLE	SINGLE
Minimum DC current gain (hFE)	30	30
JESD-30 code	R-PDSO-G3	R-PDSO-G3
Number of components	1	1
Number of terminals	3	3
Maximum operating temperature	150 °C	150 °C
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY
Package shape	RECTANGULAR	RECTANGULAR
Package form	SMALL OUTLINE	SMALL OUTLINE
Polarity/channel type	PNP	PNP
Certification status	Not Qualified	Not Qualified
surface mount	YES	YES
Terminal form	GULL WING	GULL WING
Terminal location	DUAL	DUAL
Transistor component materials	SILICON	SILICON
Nominal transition frequency (fT)	85 MHz	85 MHz
VCEsat-Max	0.25 V	0.25 V

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