BSM75GB120D datasheet, PDF - EEWORLD Datasheet

BSM75GB120D: DescriptionInsulated Gate Bipolar Transistor, 75A I(C), 1200V V(BR)CES; CategoryDiscrete semiconductor The transistor; File Size342KB，8 Pages; ManufacturerInfineon; Websitehttp://www.infineon.com/

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BSM75GB120D Overview

Insulated Gate Bipolar Transistor, 75A I(C), 1200V V(BR)CES

Parameter Name	Attribute value
Maker	Infineon
package instruction	,
Reach Compliance Code	compliant
Maximum collector current (IC)	75 A
Collector-emitter maximum voltage	1200 V
Number of components	1
Maximum power dissipation(Abs)	625 W
VCEsat-Max	2.8 V

	BSM75GB120D	BSM75GAL120D
Description	Insulated Gate Bipolar Transistor, 75A I(C), 1200V V(BR)CES	Transistor,
Maker	Infineon	Infineon
Reach Compliance Code	compliant	compliant
Maximum collector current (IC)	75 A	75 A
Maximum power dissipation(Abs)	625 W	625 W

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