5.9A, 30V, 0.05ohm, P-CHANNEL, Si, POWER, MOSFET
| Parameter Name | Attribute value |
| Is it Rohs certified? | incompatible |
| Maker | Texas Instruments |
| package instruction | SMALL OUTLINE, R-PDSO-G3 |
| Reach Compliance Code | unknown |
| ECCN code | EAR99 |
| Shell connection | DRAIN |
| Configuration | SINGLE WITH BUILT-IN DIODE |
| Minimum drain-source breakdown voltage | 30 V |
| Maximum drain current (Abs) (ID) | 5.9 A |
| Maximum drain current (ID) | 5.9 A |
| Maximum drain-source on-resistance | 0.05 Ω |
| FET technology | METAL-OXIDE SEMICONDUCTOR |
| JESD-30 code | R-PDSO-G3 |
| JESD-609 code | e0 |
| Number of components | 1 |
| Number of terminals | 3 |
| Operating mode | ENHANCEMENT MODE |
| Maximum operating temperature | 150 °C |
| Package body material | PLASTIC/EPOXY |
| Package shape | RECTANGULAR |
| Package form | SMALL OUTLINE |
| Polarity/channel type | P-CHANNEL |
| Maximum power consumption environment | 1.1 W |
| Maximum power dissipation(Abs) | 3 W |
| Maximum pulsed drain current (IDM) | 15 A |
| Certification status | Not Qualified |
| surface mount | YES |
| Terminal surface | Tin/Lead (Sn/Pb) |
| Terminal form | GULL WING |
| Terminal location | DUAL |
| transistor applications | SWITCHING |
| Transistor component materials | SILICON |
| Maximum off time (toff) | 220 ns |
| Maximum opening time (tons) | 90 ns |
| NDT454P/J23Z | NDT454P/L99Z | NDT454P | NDT454P/D84Z | NDT454P/S62Z | |
|---|---|---|---|---|---|
| Description | 5.9A, 30V, 0.05ohm, P-CHANNEL, Si, POWER, MOSFET | 5.9A, 30V, 0.05ohm, P-CHANNEL, Si, POWER, MOSFET, TO-261 | 5.9A, 30V, 0.05ohm, P-CHANNEL, Si, POWER, MOSFET, TO-261 | 5.9A, 30V, 0.05ohm, P-CHANNEL, Si, POWER, MOSFET, TO-261 | 5.9A, 30V, 0.05ohm, P-CHANNEL, Si, POWER, MOSFET, TO-261 |
| Maker | Texas Instruments | Texas Instruments | Texas Instruments | Texas Instruments | Texas Instruments |
| package instruction | SMALL OUTLINE, R-PDSO-G3 | SMALL OUTLINE, R-PDSO-G4 | SMALL OUTLINE, R-PDSO-G4 | SMALL OUTLINE, R-PDSO-G4 | SMALL OUTLINE, R-PDSO-G4 |
| Reach Compliance Code | unknown | unknown | unknown | unknown | unknown |
| ECCN code | EAR99 | EAR99 | EAR99 | EAR99 | EAR99 |
| Shell connection | DRAIN | DRAIN | DRAIN | DRAIN | DRAIN |
| Configuration | SINGLE WITH BUILT-IN DIODE | SINGLE WITH BUILT-IN DIODE | SINGLE WITH BUILT-IN DIODE | SINGLE WITH BUILT-IN DIODE | SINGLE WITH BUILT-IN DIODE |
| Minimum drain-source breakdown voltage | 30 V | 30 V | 30 V | 30 V | 30 V |
| Maximum drain current (ID) | 5.9 A | 5.9 A | 5.9 A | 5.9 A | 5.9 A |
| Maximum drain-source on-resistance | 0.05 Ω | 0.05 Ω | 0.05 Ω | 0.05 Ω | 0.05 Ω |
| FET technology | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR |
| JESD-30 code | R-PDSO-G3 | R-PDSO-G4 | R-PDSO-G4 | R-PDSO-G4 | R-PDSO-G4 |
| Number of components | 1 | 1 | 1 | 1 | 1 |
| Number of terminals | 3 | 4 | 4 | 4 | 4 |
| Operating mode | ENHANCEMENT MODE | ENHANCEMENT MODE | ENHANCEMENT MODE | ENHANCEMENT MODE | ENHANCEMENT MODE |
| Maximum operating temperature | 150 °C | 150 °C | 150 °C | 150 °C | 150 °C |
| Package body material | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY |
| Package shape | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR |
| Package form | SMALL OUTLINE | SMALL OUTLINE | SMALL OUTLINE | SMALL OUTLINE | SMALL OUTLINE |
| Polarity/channel type | P-CHANNEL | P-CHANNEL | P-CHANNEL | P-CHANNEL | P-CHANNEL |
| Maximum power consumption environment | 1.1 W | 1.1 W | 1.1 W | 1.1 W | 1.1 W |
| Maximum pulsed drain current (IDM) | 15 A | 15 A | 15 A | 15 A | 15 A |
| Certification status | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified |
| surface mount | YES | YES | YES | YES | YES |
| Terminal form | GULL WING | GULL WING | GULL WING | GULL WING | GULL WING |
| Terminal location | DUAL | DUAL | DUAL | DUAL | DUAL |
| transistor applications | SWITCHING | SWITCHING | SWITCHING | SWITCHING | SWITCHING |
| Transistor component materials | SILICON | SILICON | SILICON | SILICON | SILICON |
| Maximum off time (toff) | 220 ns | 220 ns | 220 ns | 220 ns | 220 ns |
| Maximum opening time (tons) | 90 ns | 90 ns | 90 ns | 90 ns | 90 ns |
| JEDEC-95 code | - | TO-261 | TO-261 | TO-261 | TO-261 |
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