This product complies with the RoHS Directive (EU 2002/95/EC).
Transistors with built-in Resistor
UNR51A7G
Silicon PNP epitaxial planar type
For digital circuits
Features
Costs can be reduced through downsizing of the equipment and reduction of
the number of parts.
SMini type package allowing easy automatic insertion through tape packing
Package
Code
SMini3-F2
Name
Pin
1: Base
2: Emitter
3: Collector
Parameter
Symbol
V
CBO
V
CEO
I
C
P
T
T
j
Collector-base voltage (Emitter open)
Collector current
Collector-emitter voltage (Base open)
Total power dissipation
Junction temperature
Storage temperature
T
stg
–55 to +150
Electrical Characteristics
T
a
= 25°C±3°C
Parameter
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
tin
Forward current transfer ratio
Output voltage high-level
Output voltage low-level
Input resistance
Transition frequency
Note)
Ma
int
en
an
Emitter-base cutoff current (Collector open)
Collector-emitter saturation voltage
ce
Collector-emitter cutoff current (Base open)
isc
Collector-base cutoff current (Emitter open)
on
V
CEO
I
CBO
I
CEO
I
EBO
h
FE
ue
V
CBO
di
Symbol
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Rating
–50
–50
–80
150
150
Unit
V
V
M
ain
Di
sc te
on na
tin nc
ue e/
d
Absolute Maximum Ratings
T
a
= 25°C
mA
°C
°C
mW
B
Marking Symbol: CP
Internal Connection
R
1
(22 kΩ)
C
E
Conditions
Min
-50
-50
Typ
Max
Unit
V
V
mA
mA
mA
V
V
V
kW
MHz
I
C
=
-10 mA,
I
E
= 0
I
C
=
-2
mA, I
B
= 0
V
CB
=
-50
V, I
E
= 0
V
CE
=
-50
V, I
B
= 0
V
EB
=
-6
V, I
C
= 0
-
0.1
-
0.5
460
/D
-
0.01
V
CE
=
-10
V, I
C
=
-5
mA
160
V
CE(sat)
V
OH
V
OL
R
1
f
T
I
C
=
-10
mA, I
B
=
-
0.3 mA
-
0.25
-
0.2
V
CC
=
-5
V, V
B
=
-
0.5 V, R
L
= 1 kW
-4.9
Pl
V
CC
=
-5
V, V
B
=
-
2.5 V, R
L
= 1 kW
—30%
V
CB
=
-10
V, I
E
= 1 mA, f = 200 MHz
22
80
+30%
Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
Publication date: August 2008
SJH00269AED
1
This product complies with the RoHS Directive (EU 2002/95/EC).
UNR51A7G
UNR51A7G_P
T
-T
a
P
T
T
a
UNR51A7G_I
C
-V
CE
UNR51A7G_V
CE(sat)
-I
C
I
C
V
CE
V
CE(sat)
I
C
Collector-emitter saturation voltage V
CE(sat)
(V)
−10
I
C
/ I
B
= 10
200
−80
I
B
=
−
0.4 mA
T
a
= 25°C
−
0.3 mA
Total power dissipation P
T
(mW)
Collector current I
C
(mA)
150
−1
−
0.2 mA
−40
−
0.1 mA
100
T
a
= 85°C
−25°C
25°C
−10
−10
2
−10
−1
M
ain
Di
sc te
on na
tin nc
ue e/
d
0
0
40
80
120
160
0
0
−4
−8
−12
−10
−2
−1
50
UNR51A7G_h
FE
-I
C
h
FE
I
C
Collector output capacitance
(Common base, input open circuited) C
ob
(pF)
500
T
a
= 85°C
I
C
/ I
B
= 10
400
25°C
300
−25°C
200
100
0
−1
−10
−10
2
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Output current I (mA)
uct
life
an ut e
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cy
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.
UNR51A7G_C
ob
-V
CB
Ambient temperature T
a
(°C)
Collector-emitter voltage V
CE
(V)
Collector current I
C
(mA)
UNR51A7G_I
O
-V
IN
C
ob
V
CB
I
O
V
IN
5
f = 1 MHz
T
a
= 25°C
−10
Forward current transfer ratio h
FE
V
O
=
−5
V
T
a
= 25°C
4
−1
3
2
di
0
−1
−10
−10
2
O
−10
−1
−10
−2
−10
−3
0
−
0.4
−
0.8
−1.2
Input voltage V
IN
(V)
−10
Ma
int
en
an
ce
/D
−10
2
V
O
=
−
0.2 V
T
a
= 25°C
isc
V
IN
I
O
on
UNR51A7G_V
IN
-I
O
tin
−1
−10
−1 −1
−10
−1
−10
−10
2
Output current I
O
(mA)
2
Pl
ue
Collector current I
C
(mA)
Collector-base voltage V
CB
(V)
Input voltage V
IN
(V)
SJH00269AED
1
(5°)
SMini3-F2
Ma
int
en
3
an
(0.65)
ce
/D
0.30
−
0.02
+0.05
1.30
±0.10
2.00
±0.20
2
isc
(0.65)
on
tin
ue
Pl
0 to 0.10
(0.89)
±0.10
±0.10
±0.10
di
This product complies with the RoHS Directive (EU 2002/95/EC).
SJH00269AED
M
ain
Di
sc te
on na
tin nc
ue e/
d
0.425
±0.050
Unit: mm
pla nc
1.25
ea
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p a m d m es
0.90
l
2.10
vis
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(0.49)
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0.13
−
0.02
+0.05
UNR51A7G
3
Request for your special attention and precautions in using the technical information and
semiconductors described in this book
(1)
If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and
regulations of the exporting country, especially, those with regard to security export control, must be observed.
(2) The technical information described in this book is intended only to show the main characteristics and application circuit examples
of the products, and no license is granted under any intellectual property right or other right owned by our company or any other
company. Therefore, no responsibility is assumed by our company as to the infringement upon any such right owned by any other
company which may arise as a result of the use of technical information described in this book.
(3) The products described in this book are intended to be used for standard applications or general electronic equipment (such as office
equipment, communications equipment, measuring instruments and household appliances).
Consult our sales staff in advance for information on the following applications:
–
Special applications (such as for airplanes, aerospace, automobiles, traffic control equipment, combustion equipment, life support
systems and safety devices) in which exceptional quality and reliability are required, or if the failure or malfunction of the prod-
ucts may directly jeopardize life or harm the human body.
–
Any applications other than the standard applications intended.
(4) The products and product specifications described in this book are subject to change without notice for modification and/or im-
provement. At the final stage of your design, purchasing, or use of the products, therefore, ask for the most up-to-date Product
Standards in advance to make sure that the latest specifications satisfy your requirements.
(5) When designing your equipment, comply with the range of absolute maximum rating and the guaranteed operating conditions
(operating power supply voltage and operating environment etc.). Especially, please be careful not to exceed the range of absolute
maximum rating on the transient state, such as power-on, power-off and mode-switching. Otherwise, we will not be liable for any
defect which may arise later in your equipment.
Even when the products are used within the guaranteed values, take into the consideration of incidence of break down and failure
mode, possible to occur to semiconductor products. Measures on the systems such as redundant design, arresting the spread of fire
or preventing glitch are recommended in order to prevent physical injury, fire, social damages, for example, by using the products.
(6) Comply with the instructions for use in order to prevent breakdown and characteristics change due to external factors (ESD, EOS,
thermal stress and mechanical stress) at the time of handling, mounting or at customer's process. When using products for which
damp-proof packing is required, satisfy the conditions, such as shelf life and the elapsed time since first opening the packages.
(7) This book may be not reprinted or reproduced whether wholly or partially, without the prior written permission of Matsushita
Electric Industrial Co., Ltd.
Pl
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mi UR ue ued pe pe Pro
co L a d t ty
du
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ct
life
an ut e
d
as lat
cy
on es
cle
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co fo
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Ma
int
en
an
ce
M
ain
Di
sc te
on na
tin nc
ue e/
d
/D
isc
on
tin
ue
di
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