SST/U401NL Series
New Product
Vishay Siliconix
Monolithic N-Channel JFET Duals
SST404NL
SST406NL
PRODUCT SUMMARY
Part Number
U401NL
SST/U404NL
SST/U406NL
U401NL
U404NL
U406NL
V
GS(off)
(V)
-0.5 to -2.5
-0.5 to -2.5
-0.5 to -2.5
V
(BR)GSS
Min (V)
-40
-40
-40
g
fs
Min (mS)
1
1
1
I
G
Typ (pA)
-2
-2
-2
jV
GS1
- V
GS2
j
Max (mV)
5
15
40
FEATURES
D
D
D
D
D
D
D
Anti Latchup Capability
Monolithic Design
High Slew Rate
Low Offset/Drift Voltage
Low Gate Leakage: 2 pA
Low Noise
High CMRR: 102 dB
BENEFITS
D
D
D
D
D
D
D
External Substrate Bias—Avoids Latchup
Tight Differential Match vs. Current
Improved Op Amp Speed, Settling Time Accuracy
Minimum Input Error/Trimming Requirement
Insignificant Signal Loss/Error Voltage
High System Sensitivity
Minimum Error with Large Input Signal
APPLICATIONS
D
Wideband Differential Amps
D
High-Speed,Temp-Compensated,
Single-Ended Input Amps
D
High-Speed Comparators
D
Impedance Converters
DESCRIPTION
The SST/U401NL series of high-performance monolithic dual
JFETs features extremely low noise, tight offset voltage and
low drift over temperature specifications, and is targeted for
use in a wide range of precision instrumentation applications.
This series has a wide selection of offset and drift
specifications with the U401NL featuring a 5-mV offset and
10-mV/_C drift.
Pins 4 and 8 of the SST series, and pin 4 of the U series part
numbers enable the substrate to be connected to a positive
polarity, external bias (V
DD
) to avoid latchup.
The U series, hermetically sealed TO-78 package is
available with full military processing. The SST series SO-8
package provides ease of manufacturing, and the
symmetrical pinout prevents improper orientation. The SO-8
package is available with tape-and-reel options for
compatibility with automatic assembly methods.
TO-78
Narrow Body SOIC
S
1
D
1
G
1
SUBSTRATE
1
2
3
4
8
7
6
5
SUBSTRATE
G
2
D
2
S
2
D
1
S
1
1
2
3
G
1
4
5
7
6
G
2
D
2
S
2
CASE, SUBSTRATE
Top View
Marking Codes:
SST404NL - 404NL
SST406NL - 406NL
Top View
U401NL
U404NL
U406NL
ABSOLUTE MAXIMUM RATINGS
Gate-Drain, Gate-Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -40 V
Gate Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 mA
Lead Temperature (
1
/
16
” from case for 10 sec.) . . . . . . . . . . . . . . . . . . . 300_C
U Prefix . . . . . . . . . . . . . . . . . . . . . -65 to 200_C
SST Prefix . . . . . . . . . . . . . . . . . . . -55 to 150_C
For applications information see AN106.
Document Number: 72055
S-22448—Rev. A, 17-Feb-03
Storage Temperature :
Operating Junction Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . -55 to 150_C
Power Dissipation :
Per Side
a
. . . . . . . . . . . . . . . . . . . . . . . . 300 mW
Total
b
. . . . . . . . . . . . . . . . . . . . . . . . . . . 500 mW
Notes
a. Derate 2.4 mW/_C above 25_C
b. Derate 4 mW/_C above 25_C
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7-1
SST/U401NL Series
Vishay Siliconix
New Product
SPECIFICATIONS (T
A
= 25_C UNLESS OTHERWISE NOTED)
Limits
U401NL
SST/U404NL
SST/U406NL
Parameter
Static
Gate-Source
Breakdown Voltage
Gate-Source
Cutoff Voltage
Saturation
Drain Current
b
Gate Reverse Current
Gate Operating
Current
Drain-Source
On-Resistance
Gate-Source Voltage
Gate-Source
Forward Voltage
Symbol
Test Conditions
I
G
= -1
mA,
V
DS
= 0 V
I
G
=
"1
mA,
V
DS
= 0 V, V
GS
= 0 V
V
DS
= 15 V, I
D
= 1 nA
V
DS
= 10 V, V
GS
= 0 V
V
GS
= -30 V, V
DS
= 0 V
T
A
= 125_C
V
DG
= 15 V, I
D
= 200
mA
T
A
= 125_C
V
GS
= 0 V, I
D
= 0.1 mA
V
DG
= 15 V, I
D
= 200
mA
I
G
= 1 mA , V
DS
= 0 V
Typ
a
Min
Max
Min
Max
Min
Max
Unit
V
(BR)GSS
V
(BR)G1 - G2
V
GS(off)
I
DSS
I
GSS
I
G
r
DS(on)
V
GS
V
GS(F)
-58
"45
-1.5
3.5
-2
-1
-2
-0.8
250
-1
0.7
-40
"30
-0.5
0.5
-2.5
10
-25
-40
"30
-0.5
0.5
- 2.5
-40
"30
-0.5
0.5
-2.5
10
-25
mA
pA
nA
V
10
-25
-15
-10
-15
-10
-15
-10
pA
nA
W
-2.3
-2.3
-2.3
V
Dynamic
Common-Source
Forward
Transconductance
Common-Source
Output Conductance
Common-Source
Forward
Transconductance
Common-Source
Output Conductance
Common-Source
Input Capacitance
Common-Source
Reverse Transfer
Capacitance
Equivalent Input
Noise Voltage
g
fs
g
os
g
fs
g
os
C
iss
C
rss
e
n
V
DS
= 15 V I
D
= 200
mA
V,
f = 1 MHz
V
DS
= 15 V, I
D
= 200
mA
f = 10 Hz (U Only)
V
DS
= 15 V, I
D
= 200
mA
f = 1 kHz
1.5
1.3
1
2
2
1
2
2
1
2
2
mS
mS
mS
mS
4
V
DS
= 10 V, V
GS
= 0 V
f = 1 kHz
5
4
2
7
2
7
2
7
30
8
30
8
30
8
pF
1.5
3
3
3
nV⁄
√Hz
10
20
20
20
Matching
Differential
Gate-Source Voltage
Gate-Source Voltage
Differential Change
g
with Temperature
Common Mode
Rejection Ratio
|V
GS1
– V
GS2
|
D
|V
GS1
– V
GS2
|
DT
CMRR
V
DG
= 10 V, I
D
= 200
mA
V
DG
= 10 V
I
D
= 200
mA
m
T
A
= -55 to 125_C
55
SST404NL
SST406NL
All U
102
95
20
40
10
95
25
80
dB
m
mV/_C
5
15
40
mV
V
DG
= 10 to 20 V, I
D
= 200
mA
Notes
a. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing.
b. Pulse test: PW
v300
ms
duty cycle
v3%.
NNR
www.vishay.com
7-2
Document Number: 72055
S-22448—Rev. A, 17-Feb-03
SST/U401NL Series
New Product
TYPICAL CHARACTERISTICS (T
A
= 25_C UNLESS OTHERWISE NOTED)
Drain Current and Transconductance
vs. Gate-Source Cutoff Voltage
10
I
DSS
- Saturation Drain Current (mA)
I
DSS
@ V
DS
= 15 V, V
GS
= 0 V
g
fs
@ V
DG
= 15 V, V
GS
= 0 V
f = 1 kHz
8.0
g
fs
- Forward Transconductance (mS)
100 nA
Vishay Siliconix
Gate Leakage Current
8
6.4
10 nA
I
G
@ I
D
= 500 mA
T
A
= 125_C
6
g
fs
4.8
I
G
- Gate Leakage
1 nA
100 pA
I
GSS
@ 125_C
50 mA
50 mA
4
I
DSS
2
3.2
10 pA
T
A
= 25_C
1.6
1 pA
I
GSS
@ 25_C
0
0
-0.5
-1.0
-1.5
-2.0
0
-2.5
0.1 pA
0
10
20
30
40
50
V
DG
- Drain-Gate Voltage (V)
V
GS(off)
- Gate-Source Cutoff Voltage (V)
Output Characteristics
4
V
GS(off)
= -1.5 V
3.2
I
D
- Drain Current (mA)
I
D
- Drain Current (mA)
-0.2 V
2.4
-0.4 V
1.6
-0.6 V
-1.2 V
0.8
-0.8 V
-1.0 V
0
0
4
8
12
16
20
1
0
0
4
5
4
3
V
GS
= 0 V
6
7
Output Characteristics
V
GS(off)
= -2 V
V
GS
= 0 V
-0.2 V
-0.4 V
-0.6 V
-0.8 V
2
-1.0 V
-1.2 V
8
12
16
20
V
DS
- Drain-Source Voltage (V)
V
DS
- Drain-Source Voltage (V)
Output Characteristics
3
V
GS(off)
= -1.5 V
2.4
I
D
- Drain Current (mA)
I
D
- Drain Current (mA)
-0.2 V
1.8
-0.4 V
1.2
V
GS
= 0 V
3.2
4
Output Characteristics
V
GS
= 0 V
V
GS(off)
= -2 V
-0.2 V
-0.4 V
2.4
-0.6 V
-0.8 V
-0.6 V
-1.2 V
-0.8 V
-1.0 V
1.6
-1.0 V
0.8
-1.2 V
-1.4 V
0
0.6
0
0
0.2
0.4
0.6
0.8
1
0
0.2
0.4
0.6
0.8
1
V
DS
- Drain-Source Voltage (V)
Document Number: 72055
S-22448—Rev. A, 17-Feb-03
V
DS
- Drain-Source Voltage (V)
www.vishay.com
7-3
SST/U401NL Series
Vishay Siliconix
New Product
TYPICAL CHARACTERISTICS (T
A
= 25_C UNLESS OTHERWISE NOTED)
Transfer Characteristics
5
V
GS(off)
= -1.5V
4
I
D
- Drain Current (mA)
T
A
= -55_C
25_C
3
V
GS1
- V
GS2
10
(mV)
V
DS
= 15 V
100
V
DG
= 15 V
Gate-Source Differential Voltage
vs. Drain Current
SST/U404NL
2
125_C
1
U401NL
0
0
-0.4
-0.8
-1.2
-1.6
V
GS
- Gate-Source Voltage (V)
-2
1
0.01
0.1
I
D
- Drain Current (mA)
1
Voltage Differential with Temperature
vs. Drain Current
100
V
DG
= 15 V
DT
A
= 25 to 125_C
DT
A
= -55 to 25_C
SST/U404NL
CMRR (dB)
110
130
Common Mode Rejection Ratio
vs. Drain Current
DV
DG
D
V
GS1
- V
GS2
CMRR = 20 log
120
(
m
V/
_C
)
DV
DG
= 10 - 20 V
V
GS1
- V
GS2
10
U401NL
D
t
100
5 - 10 V
90
D
1
0.01
80
0.1
I
D
- Drain Current (mA)
1
0.01
0.1
I
D
- Drain Current (mA)
1
Circuit Voltage Gain vs. Drain Current
150
r
DS(on)
- Drain-Source On-Resistance (
Ω )
500
On-Resistance vs. Drain Current
120
V
GS(off)
= -1.5 V
A V - Voltage Gain
-2.0 V
90
400
V
GS(off)
= -1.0 V
300
-1.5 V
60
30
A
V
+
1
)
R g
L os
Assume V
DD
= 15 V, V
DS
= 5 V
10 V
R
L
+
I
D
g
fs
R
L
200
-2.0 V
100
0
0.01
0.1
I
D
- Drain Current (mA)
1
0
0.01
0.1
I
D
- Drain Current (mA)
1
www.vishay.com
7-4
Document Number: 72055
S-22448—Rev. A, 17-Feb-03
SST/U401NL Series
New Product
TYPICAL CHARACTERISTICS (T
A
= 25_C UNLESS OTHERWISE NOTED)
Common-Source Input Capacitance
vs. Gate-Source Voltage
10
C rss - Reverse Feedback Capacitance (pF)
f = 1 MHz
8
10
f = 1 MHz
8
Vishay Siliconix
Common-Source Reverse Feedback
Capacitance vs. Gate-Source Voltage
C iss - Input Capacitance (pF)
6
V
DS
= 0 V
6
V
DS
= 0 V
4
5V
2
15 V
0
0
-4
-8
-12
-16
V
GS
- Gate-Source Voltage (V)
-20
4
5V
2
15 V
0
0
-4
-8
-12
-16
V
GS
- Gate-Source Voltage (V)
-20
Output Conductance vs. Drain Current
5
V
GS(off)
= -1.5 V
4
g
os
- Output Conductance (µS)
V
DS
= 15 V
f = 1 kHz
Hz
16
20
Equivalent Input Noise Voltage vs. Frequency
V
DG
= 15 V
3
T
A
= -55_C
2
25_C
1
125_C
0
0.01
0.1
I
D
- Drain Current (mA)
1
en - Noise Voltage nV /
12
I
D
@ 200
mA
8
4
V
GS
= 0 V
0
10
100
1k
f - Frequency (Hz)
10 k
100 k
Common-Source Forward Transconductance
vs. Drain Current
4.0
V
GS(off)
= -1.5 V
g
fs
- Forward Transconductance (mS)
3.2
V
DS
= 15 V
f = 1 kHz
r
DS(on)
- Drain-Source On-Resistance (
Ω )
500
On-Resistance and Output Conductance
vs. Gate-Source Cutoff Voltage
30
g os - Output Conductance (
m
S)
400
r
DS
g
os
24
2.4
T
A
= -55_C
300
1.6
25_C
200
r
DS
@ I
D
= 100
mA
V
GS
= 0 V
g
os
@ V
DG
= 15 V
V
GS
= 0 V
f = 1 kHz
18
12
125_C
0.8
100
6
0
0.01
0.1
I
D
- Drain Current (mA)
1
0
0
-0.5
-1.0
-1.5
-2.0
V
GS(off)
- Gate-Source Cutoff Voltage (V)
-2.5
0
Document Number: 72055
S-22448—Rev. A, 17-Feb-03
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7-5
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