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ZUMT2907ATA

Description
Small Signal Bipolar Transistor, 0.6A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon
CategoryDiscrete semiconductor    The transistor   
File Size60KB,2 Pages
ManufacturerDiodes
Websitehttp://www.diodes.com/
Download Datasheet Parametric Compare View All

ZUMT2907ATA Overview

Small Signal Bipolar Transistor, 0.6A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon

ZUMT2907ATA Parametric

Parameter NameAttribute value
MakerDiodes
package instructionSMALL OUTLINE, R-PDSO-G3
Reach Compliance Codeunknown
ECCN codeEAR99
Maximum collector current (IC)0.6 A
Collector-emitter maximum voltage60 V
ConfigurationSINGLE
Minimum DC current gain (hFE)100
JESD-30 codeR-PDSO-G3
Number of components1
Number of terminals3
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Polarity/channel typePNP
Certification statusNot Qualified
surface mountYES
Terminal formGULL WING
Terminal locationDUAL
transistor applicationsSWITCHING
Transistor component materialsSILICON
Nominal transition frequency (fT)200 MHz
Maximum off time (toff)110 ns
Maximum opening time (tons)50 ns

ZUMT2907ATA Related Products

ZUMT2907ATA ZUMT2907ATC
Description Small Signal Bipolar Transistor, 0.6A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon Small Signal Bipolar Transistor, 0.6A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon
Maker Diodes Diodes
package instruction SMALL OUTLINE, R-PDSO-G3 SMALL OUTLINE, R-PDSO-G3
Reach Compliance Code unknown unknown
ECCN code EAR99 EAR99
Maximum collector current (IC) 0.6 A 0.6 A
Collector-emitter maximum voltage 60 V 60 V
Configuration SINGLE SINGLE
Minimum DC current gain (hFE) 100 100
JESD-30 code R-PDSO-G3 R-PDSO-G3
Number of components 1 1
Number of terminals 3 3
Package body material PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR RECTANGULAR
Package form SMALL OUTLINE SMALL OUTLINE
Polarity/channel type PNP PNP
Certification status Not Qualified Not Qualified
surface mount YES YES
Terminal form GULL WING GULL WING
Terminal location DUAL DUAL
transistor applications SWITCHING SWITCHING
Transistor component materials SILICON SILICON
Nominal transition frequency (fT) 200 MHz 200 MHz
Maximum off time (toff) 110 ns 110 ns
Maximum opening time (tons) 50 ns 50 ns
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