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UZVN4106FTA

Description
Small Signal Field-Effect Transistor, 0.2A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET,
CategoryDiscrete semiconductor    The transistor   
File Size76KB,2 Pages
ManufacturerZetex Semiconductors
Websitehttp://www.zetex.com/
Environmental Compliance
Download Datasheet Parametric Compare View All

UZVN4106FTA Overview

Small Signal Field-Effect Transistor, 0.2A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET,

UZVN4106FTA Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerZetex Semiconductors
Reach Compliance Codenot_compliant
ECCN codeEAR99
ConfigurationSINGLE
Minimum drain-source breakdown voltage60 V
Maximum drain current (ID)0.2 A
Maximum drain-source on-resistance2.5 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
Maximum feedback capacitance (Crss)8 pF
JESD-30 codeR-PDSO-G3
JESD-609 codee3
Humidity sensitivity level1
Number of components1
Number of terminals3
Operating modeENHANCEMENT MODE
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)260
Polarity/channel typeN-CHANNEL
Certification statusNot Qualified
surface mountYES
Terminal surfaceMATTE TIN
Terminal formGULL WING
Terminal locationDUAL
Maximum time at peak reflow temperature40
Transistor component materialsSILICON

UZVN4106FTA Preview

SOT23 N-CHANNEL ENHANCEMENT
MODE VERTICAL DMOS FET
ISSUE 2 – DECEMBER 1995
PARMARKING DETAIL - MZ
ZVN4106F
S
D
G
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
Drain-Source Voltage
Continuous Drain Current at T
amb
=25°C
Pulsed Drain Current
Gate-Source Voltage
Max Power Dissipation at T
amb
=25°C
Operating and Storage Temperature Range
SYMBOL
V
DS
I
D
I
DM
V
GS
P
tot
T
j
:T
stg
VALUE
60
0.2
3
±
20
330
-55 to +150
UNIT
V
A
A
V
mW
°C
ELECTRICAL CHARACTERISTICS (at T
amb
= 25°C unless otherwise stated).
PARAMETER
Drain-Source Breakdown
Voltage
Gate-Source Threshold
Voltage
Gate-Body Leakage
Zero Gate Voltage Drain
Current
On-State Drain Current(1)
Static Drain-Source On-State
Resistance (1)
SYMBOL MIN.
BV
DSS
V
GS(th)
I
GSS
I
DSS
I
D(on)
R
DS(on)
150
35
25
8
5
7
6
8
1
2.5
5
60
1.3
3
100
10
50
MAX. UNIT CONDITIONS.
V
V
nA
µA
µA
A
mS
pF
pF
pF
ns
ns
ns
ns
V
DD
≈25V,
I
D
=150mA
V
DS
=25V, V
GS
=0V, f=1MHz
I
D
=1mA, V
GS
=0V
I
D
=1mA, V
DS
= V
GS
V
GS
=± 20V, V
DS
=0V
V
DS
=60V, V
GS
=0
V
DS
=48V, V
GS
=0V, T=125°C
(2)
V
DS
=25V, V
GS
=10V
V
GS
=10V, I
D
=500mA
V
GS
=5V, I
D
=200mA
V
DS
=25V, I
D
=250mA
Forward Transconductance(1)(2 g
fs
)
Input Capacitance (2)
Common Source Output
Capacitance (2)
Reverse Transfer Capacitance
(2)
Turn-On Delay Time (2)(3)
Rise Time (2)(3)
Turn-Off Delay Time (2)(3)
Fall Time (2)(3)
C
iss
C
oss
C
rss
T
d(on)
T
r
T
d(off)
T
f
(1) Measured under pulsed conditions. Width=300µs. Duty cycle
≤2%
(2) Sample test.
(3) Switching times measured with 500Ω source impedance and <5ns rise time on a pulse generator
Spice parameter data is available upon request for this device
3 - 399
ZVN4106F
4
R
DS(on)
- Drain Source On Resistance (Ω)
100
V
GS
=3.5V
4V
5V
6V
I
D
- Drain Current (A)
V
GS
=20V
3
16V
14V
12V
2
10V
9V
8V
10
8V
10V
14V
20V
1
7V
6V
5V
4V
0
0
2
4
6
8
10
1
0.01
0.1
1
10
V
DS
- Drain Source Voltage (V)
I
D
- Drain Current (A)
Saturation Characteristics
Normalised R
DS(on)
and V
GS(th)
1.8
300
On-Resistance v Drain Current
gfs - Transconductance (S)
V
DS
=10V
I
D
=0.5A
R
DS(on)
1.2
200
0.6
V
GS(th)
100
0
-50
0
50
100
150
0
0
0.5
1.0
1.5
2.0
T
j
- Junction Temperature ( °C)
I
D(on)
- Drain Current (A)
Normalised R
DS(on)
& V
GS(th)
v Temperature
V
GS
- Gate Source Voltage (V)
80
16
Transconductance v Drain Current
I
D
=0.5A
V
DD
=20V
40V
50V
C - Capacitance (pF)
60
12
40
C
iss
8
20
C
oss
C
rss
4
0
0
15
30
45
60
0
0
0.6
1.2
1.8
V
DS
- Drain Source Voltage (V)
Q - Charge (nC)
Capacitance v Drain Source Voltage
Gate Source Voltage v Gate Charge
3 - 400

UZVN4106FTA Related Products

UZVN4106FTA UZVN4106F
Description Small Signal Field-Effect Transistor, 0.2A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, Small Signal Field-Effect Transistor, 0.2A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
Is it Rohs certified? conform to conform to
Maker Zetex Semiconductors Zetex Semiconductors
Reach Compliance Code not_compliant compliant
ECCN code EAR99 EAR99
Configuration SINGLE SINGLE
Minimum drain-source breakdown voltage 60 V 60 V
Maximum drain current (ID) 0.2 A 0.2 A
Maximum drain-source on-resistance 2.5 Ω 2.5 Ω
FET technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
Maximum feedback capacitance (Crss) 8 pF 8 pF
JESD-30 code R-PDSO-G3 R-PDSO-G3
JESD-609 code e3 e3
Humidity sensitivity level 1 1
Number of components 1 1
Number of terminals 3 3
Operating mode ENHANCEMENT MODE ENHANCEMENT MODE
Package body material PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR RECTANGULAR
Package form SMALL OUTLINE SMALL OUTLINE
Peak Reflow Temperature (Celsius) 260 260
Polarity/channel type N-CHANNEL N-CHANNEL
Certification status Not Qualified Not Qualified
surface mount YES YES
Terminal surface MATTE TIN Matte Tin (Sn)
Terminal form GULL WING GULL WING
Terminal location DUAL DUAL
Maximum time at peak reflow temperature 40 40
Transistor component materials SILICON SILICON
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