UZVP3306FTC datasheet, PDF - EEWORLD Datasheet

UZVP3306FTC: DescriptionSmall Signal Field-Effect Transistor, 0.09A I(D), 60V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET; CategoryDiscrete semiconductor The transistor; File Size120KB，2 Pages; ManufacturerDiodes; Websitehttp://www.diodes.com/

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UZVP3306FTC Overview

Small Signal Field-Effect Transistor, 0.09A I(D), 60V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET

Parameter Name	Attribute value
Maker	Diodes
package instruction	SMALL OUTLINE, R-PDSO-G3
Reach Compliance Code	unknown
ECCN code	EAR99
Configuration	SINGLE
Minimum drain-source breakdown voltage	60 V
Maximum drain current (ID)	0.09 A
Maximum drain-source on-resistance	14 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR
Maximum feedback capacitance (Crss)	8 pF
JESD-30 code	R-PDSO-G3
JESD-609 code	e3
Humidity sensitivity level	1
Number of components	1
Number of terminals	3
Operating mode	ENHANCEMENT MODE
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Peak Reflow Temperature (Celsius)	260
Polarity/channel type	P-CHANNEL
Certification status	Not Qualified
surface mount	YES
Terminal surface	MATTE TIN
Terminal form	GULL WING
Terminal location	DUAL
Maximum time at peak reflow temperature	40
Transistor component materials	SILICON

	UZVP3306FTC
Description	Small Signal Field-Effect Transistor, 0.09A I(D), 60V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET
Maker	Diodes
package instruction	SMALL OUTLINE, R-PDSO-G3
Reach Compliance Code	unknown
ECCN code	EAR99
Configuration	SINGLE
Minimum drain-source breakdown voltage	60 V
Maximum drain current (ID)	0.09 A
Maximum drain-source on-resistance	14 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR
Maximum feedback capacitance (Crss)	8 pF
JESD-30 code	R-PDSO-G3
JESD-609 code	e3
Humidity sensitivity level	1
Number of components	1
Number of terminals	3
Operating mode	ENHANCEMENT MODE
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Peak Reflow Temperature (Celsius)	260
Polarity/channel type	P-CHANNEL
Certification status	Not Qualified
surface mount	YES
Terminal surface	MATTE TIN
Terminal form	GULL WING
Terminal location	DUAL
Maximum time at peak reflow temperature	40
Transistor component materials	SILICON

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