ZXM64N03X
30V N-CHANNEL ENHANCEMENT MODE MOSFET
SUMMARY
V
(BR)DSS
=30V; R
DS(ON)
=0.045
;
I
D
=5.0A
DESCRIPTION
This new generation of high density MOSFETs from Zetex utilises a unique
structure that combines the benefits of low on-resistance with fast switching
speed. This makes them ideal for high efficiency, low voltage, power
management applications.
FEATURES
•
•
•
•
•
•
•
•
•
Low on-resistance
Fast switching speed
Low threshold
Low gate drive
Low profile SOIC package
MSOP8
APPLICATIONS
DC - DC Converters
Power Management Functions
Disconnect switches
Motor control
S
D
D
D
D
ORDERING INFORMATION
DEVICE
ZXM64N03XTA
ZXM64N03XTC
REEL SIZE
(inches)
7
13
TAPE WIDTH (mm)
12mm embossed
12mm embossed
QUANTITY
PER REEL
1000 units
4000 units
S
G
3
DEVICE MARKING
•
ZXM4N03
PROVISIONAL ISSUE A - JULY 1999
129
4
Top View
5
6 7
S
2
1
8
ZXM64N03X
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
Drain-Source Voltage
Gate- Source Voltage
Continuous Drain Current (V
GS
=10V; T
A
=25°C)(b)
(V
GS
=10V; T
A
=70°C)(b)
Pulsed Drain Current (c)
Continuous Source Current (Body Diode)(b)
Pulsed Source Current (Body Diode)(c)
Power Dissipation at T
A
=25°C (a)
Linear Derating Factor
Power Dissipation at T
A
=25°C (b)
Linear Derating Factor
Operating and Storage Temperature Range
SYMBOL
V
DSS
V
GS
I
D
I
DM
I
S
I
SM
P
D
P
D
T
j
:T
stg
LIMIT
30
±
20
5.0
4.0
30
2.4
30
1.1
8.8
1.8
14.4
-55 to +150
UNIT
V
V
A
A
A
A
W
mW/°C
W
mW/°C
°C
THERMAL RESISTANCE
PARAMETER
Junction to Ambient (a)
Junction to Ambient (b)
SYMBOL
R
θJA
R
θJA
VALUE
113
70
UNIT
°C/W
°C/W
NOTES
(a) For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper,
in still air conditions
(b) For a device surface mounted on FR4 PCB measured at t 10 secs.
(c) Repetitive rating - pulse width limited by maximum junction temperature. Refer to Transient Thermal
Impedance graph.
PROVISIONAL ISSUE A - JULY 1999
130
ZXM64N03X
CHARACTERISTICS
Max Power Dissipation (Watts)
100
Refer Note (a)
2.0
I
D
- Drain Current (A)
1.5
Refer Note (b)
Refer Note (a)
10
1.0
1
DC
1s
100ms
10ms
1ms
100us
0.5
100m
0.1
1
10
100
0
0
20
40
60
80
100
120
140
160
V
DS
- Drain-Source Voltage (V)
T - Temperature (°C)
Safe Operating Area
Ref Note (a)
Derating Curve
Thermal Resistance (°C/W)
80
120
60
Themal Resistance (°C/W)
90
40
D=0.5
60
D=0.5
20
D=0.2
D=0.1
30
D=0.2
D=0.1
Single Pulse
0
0.0001
Single Pulse
0.001
0.01
0.1
1
10
100
0
0.0001 0.001
0.01
0.1
1
10
100
1000
Pulse Width (s)
Pulse Width (s)
Transient Thermal Impedance
Refer Note (b)
Transient Thermal Impedance
Refer Note (a)
PROVISIONAL ISSUE A - JULY 1999
131
ZXM64N03X
ELECTRICAL CHARACTERISTICS (at T
amb
= 25°C unless otherwise stated).
PARAMETER
STATIC
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body Leakage
Gate-Source Threshold Voltage
Static Drain-Source On-State Resistance
(1)
Forward Transconductance (3)
DYNAMIC
(3)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
SWITCHING(2)
(3)
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
Gate-Source Charge
Gate Drain Charge
SOURCE-DRAIN DIODE
Diode Forward Voltage (1)
Reverse Recovery Time (3)
Reverse Recovery Charge(3)
V
SD
t
rr
Q
rr
24.5
19.1
0.95
V
ns
nC
T
j
=25°C, I
S
=3.7A,
V
GS
=0V
T
j
=25°C, I
F
=3.7A,
di/dt= 100A/µs
t
d(on)
t
r
t
d(off)
t
f
Q
g
Q
gs
Q
gd
4.2
4.5
20.5
8
27
5
4.5
ns
ns
ns
ns
nC
nC
nC
V
DS
=24V,V
GS
=10V,
I
D
=3.7A
(Refer to test
circuit)
V
DD
=5V, I
D
=3.7A
R
G
=6.2Ω, R
D
=4.0Ω
(Refer to test
circuit)
C
iss
C
oss
C
rss
950
200
50
pF
pF
pF
V
DS
=25 V, V
GS
=0V,
f=1MHz
V
(BR)DSS
I
DSS
I
GSS
V
GS(th)
R
DS(on)
g
fs
4.3
1.0
0.045
0.060
30
1
100
V
µA
nA
V
Ω
Ω
S
I
D
=250µA, V
GS
=0V
V
DS
=30V, V
GS
=0V
V
GS
=± 20V, V
DS
=0V
I
D
=250µA, V
DS
= V
GS
V
GS
=10V, I
D
=3.7A
V
GS
=4.5V, I
D
=1.9A
V
DS
=10V,I
D
=1.9A
SYMBOL MIN.
TYP.
MAX.
UNIT CONDITIONS.
(1) Measured under pulsed conditions. Width=300µs. Duty cycle
≤2%
.
(2) Switching characteristics are independent of operating junction temperature.
(3) For design aid only, not subject to production testing.
PROVISIONAL ISSUE A - JULY 1999
132
ZXM64N03X
TYPICAL CHARACTERISTICS
100
+25°C
100
+150°C
I
D
- Drain Current (A)
I
D
- Drain Current (A)
10V 6V 5V
4.5V
VGS
4V
10V 6V 5V
VGS
4.5V
4V
3.5V
3V
10
3.5V
10
3V
100m
2.5V
100m
2.5V
2V
10m
0.1
1
10
100
10m
0.1
1
10
100
V
DS
- Drain-Source Voltage (V)
V
DS
- Drain-Source Voltage (V)
Output Characteristics
Output Characteristics
100
1.7
Normalised R
DS(on)
and V
GS(th)
VDS=10V
RDS(on)
I
D
- Drain Current (A)
1.5
1.3
1.1
0.9
0.7
0.5
-100
VGS(th)
VGS=10V
ID=3.7A
T=150°C
10
T=25°C
VGS=VDS
ID=250uA
0.1
2.5
3
V
GS
-
3.5
4
4.5
5
5.5
0
100
200
Gate-Source Voltage (V)
T
j
- Junction Temperature (°C)
Transfer Characteristics
Normalised R
DS(on)
and V
GS(th)
v Temperature
I
SD
- Reverse Drain Current (A)
100
RDS(on) - Drain-Source On-Resistance (
Ω)
100
VGS=3V
VGS=4.5V
VGS=10V
10
10
1
T=150°C
T=25°C
0.1
0.1
1
10
100
100m
0.3
0.5
0.7
0.9
1.1
1.3
I
D
- Drain Current (A)
V
SD
- Source-Drain Voltage (V)
On-Resistance v Drain Current
Source-Drain Diode Forward Voltage
PROVISIONAL ISSUE A - JULY 1999
133
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