UZTX458 datasheet, PDF - EEWORLD Datasheet

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UZTX458: DescriptionSmall Signal Bipolar Transistor, 0.3A I(C), 400V V(BR)CEO, 1-Element, NPN, Silicon, TO-92 COMPATIBLE, E-LINE PACKAGE-3; CategoryDiscrete semiconductor The transistor; File Size75KB，2 Pages; ManufacturerZetex Semiconductors; Websitehttp://www.zetex.com/; Environmental Compliance

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UZTX458 Overview

Small Signal Bipolar Transistor, 0.3A I(C), 400V V(BR)CEO, 1-Element, NPN, Silicon, TO-92 COMPATIBLE, E-LINE PACKAGE-3

UZTX458 Parametric

Parameter Name	Attribute value
Is it Rohs certified?	conform to
Maker	Zetex Semiconductors
package instruction	CYLINDRICAL, O-PBCY-W3
Reach Compliance Code	not_compliant
ECCN code	EAR99
Maximum collector current (IC)	0.3 A
Collector-emitter maximum voltage	400 V
Configuration	SINGLE
Minimum DC current gain (hFE)	100
JESD-30 code	O-PBCY-W3
JESD-609 code	e3
Humidity sensitivity level	1
Number of components	1
Number of terminals	3
Maximum operating temperature	200 °C
Package body material	PLASTIC/EPOXY
Package shape	ROUND
Package form	CYLINDRICAL
Peak Reflow Temperature (Celsius)	260
Polarity/channel type	NPN
Certification status	Not Qualified
surface mount	NO
Terminal surface	Matte Tin (Sn)
Terminal form	WIRE
Terminal location	BOTTOM
Maximum time at peak reflow temperature	40
transistor applications	SWITCHING
Transistor component materials	SILICON
Nominal transition frequency (fT)	50 MHz
VCEsat-Max	0.5 V

UZTX458 Preview

NPN SILICON PLANAR MEDIUM POWER

HIGH VOLTAGE TRANSISTOR

ISSUE 2 MARCH 1994

FEATURES

* 400 Volt V

CEO

* 0.5 Amp continuous current

* P

tot

= 1 Watt

ZTX458

ABSOLUTE MAXIMUM RATINGS.

PARAMETER

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Continuous Collector Current

Power Dissipation at T

amb

=25°C

Operating and Storage Temperature Range

PARAMETER

SYMBOL

(BR)CBO

CEO(sus)

(BR)EBO

CBO

CES

EBO

CE(sat)

BE(sat)

BE(on)

obo

100

MIN.

SYMBOL

CBO

CEO

EBO

tot

stg

TYP.

MAX.

E-Line

TO92 Compatible

VALUE

400

300

-55 to +200

UNIT

100

0.2

0.5

0.9

300

MHz

CONDITIONS.

=100

=10mA*

=100

=320V

VCE=320V

=4V

=20mA, I

=2mA

=50mA, I

=6mA

=50mA, I

=5mA

IC=50mA, V

=10V

=1mA, V

=10V

=50mA, V

=10V

=100mA, V

=10V*

=10mA, V

=20V

f=20MHz

=20V, f=1MHz

UNIT

°C

ELECTRICAL CHARACTERISTICS (at T

amb

= 25°C).

Collector-Base

Breakdown Voltage

Collector-Emitter

Breakdown Voltage

Emitter-Base

Breakdown Voltage

Collector Cut-Off

Current

Collector Cut-Off

Current

Emitter Cut-Off Current

Collector-Emitter

Saturation Voltage

Base-Emitter

Saturation Voltage

Base-Emitter

Turn On Voltage

Static Forward Current

Transfer Ratio

Transition Frequency

Collector-Base

Breakdown Voltage

400

3-182

ZTX458

TYPICAL CHARACTERISTICS

=10

=20

=50

amb

=25°C

-55°C

+25°C

+100°C

+175°C

1.6

=10

1.6

CE(sat)

- (Volts)

1.2

1.0

0.8

0.6

0.4

0.2

0.001

0.01

0.1

10 20

CE(sat)

- (Volts)

1.4

1.2

1.0

0.8

0.6

0.4

0.2

0.001

0.01

0.1

10 20

Collector Current (Amps)

CE(sat)

v I

CE(sat)

v I

1.6

- Normalised Gain

1.4

1.2

1.0

0.8

0.6

0.4

0.2

0.001

+100°C

+25°C

-55°C

=10V

300

1.6

1.4

-55°C

+25°C

+100°C

+175°C

=10

BE(sat)

- (Volts)

1.2

1.0

0.8

0.6

0.4

0.2

200

100

0.01

0.1

10 20

0.001

0.01

0.1

10 20

Collector Current (Amps)

v I

1.0

-55°C

+25°C

+100°C

+175°C

BE(sat)

v I

Single Pulse Test at T

amb

=25°C

=10V

1.6

1.4

- Collector Current (Amps)

- (Volts)

1.2

1.0

0.8

0.6

0.4

0.2

0.001

0.01

0.1

10 20

0.1

D.C.

100ms

10ms

1.0ms

0.1ms

0.01

0.001

100

1000

Collector Current (Amps)

Collector Voltage (Volts)

BE(on)

v I

Safe Operating Area

3-183

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