U/J/SST308
SERIES
SINGLE N-CHANNEL HIGH
FREQUENCY JFET
FEATURES
Direct Replacement For SILICONIX U/J/SST308 SERIES
OUTSTANDING HIGH FREQUENCY GAIN
LOW HIGH FREQUENCY NOISE
ABSOLUTE MAXIMUM RATINGS
@ 25 °C (unless otherwise stated)
Maximum Temperatures
Storage Temperature
Junction Operating Temperature
Maximum Power Dissipation
Continuous Power Dissipation (J/SST)
Continuous Power Dissipation (U)
Maximum Currents
Gate Current (J/SST)
Gate Current (U)
Maximum Voltages
Gate to Drain
Gate to Source
-25V
-25V
10mA
20mA
5
4
1
G
pg
= 11.5dB
NF = 2.7dB
U SERIES
TOP VIEW
J SERIES
-55 to 150°C
-55 to 150°C
350mW
500mW
SST SERIES
SOT-23
TOP VIEW
D
S
1
3
2
G
COMMON ELECTRICAL CHARACTERISTICS @ 25 °C (unless otherwise stated)
SYMBOL
BV
GSS
V
GS(F)
I
G
r
DS(on)
e
n
NF
G
pg
g
fg
g
og
IGSS
CHARACTERISTIC
Gate to Source Breakdown Voltage
Gate to Source Forward Voltage
Gate Operating Current
Drain to Source On Resistance
Equivalent Noise Voltage
Noise Figure
Power Gain
2
MIN
-25
0.7
TYP
MAX
1.15
UNIT
V
pA
Ω
nV/√Hz
CONDITIONS
I
G
= -1µA, V
DS
= 0V
I
G
= 10mA, V
DS
= 0V
V
DG
= 9V, I
D
= 10mA
V
GS
= 0V, I
D
= 1mA
V
DS
= 10V, I
D
= 10mA,
f
= 100Hz
-15
35
6
f
= 105MHz
f
= 450MHz
f
= 105MHz
f
= 450MHz
f
= 105MHz
f
= 450MHz
f
= 105MHz
f
= 450MHz
1.5
2.7
16
11.5
14
13
0.16
0.55
-1
dB
V
DS
= 10V, I
D
= 10mA
mS
Forward
Transconductance
Output Conductance
Gate Reverse Current
nA
V
GS
= -15V, V
DS
= 0V
Linear Integrated Systems
•
4042 Clipper Court • Fremont, CA 94538 • Tel: 510 490-9160 • Fax: 510 353-0261
1/31/12
Rev#A5 ECN#U/J/SST 308
SPECIFIC ELECTRICAL CHARACTERISTICS @25 °C (unless otherwise stated)
SYM.
V
GS(off)
I
DSS
C
iss
C
rss
g
fs
g
os
CHARACTERISTIC
Gate to Source Cutoff Voltage
Source to Drain Saturation Current
Input Capacitance
Reverse Transfer Capacitance
Forward Transconductance
Output Conductance
3
TYP
J/SST308
MIN
-1
12
MAX
-6.5
75
J/SST309
MIN
-1
12
MAX
-4
30
J/SST310
MIN
-2
24
MAX
-6.5
75
UNIT
V
mA
pF
CONDITIONS
V
DS
= 10V, I
D
= 1nA
V
DS
= 10V, V
GS
= 0V
V
DS
= 10V, V
GS
= -10V
f
= 1MHz
V
DS
= 10V, I
D
= 10mA
f
= 1kHz
4
1.9
14
110
8
250
10
250
8
250
mS
µS
SPECIFIC ELECTRICAL CHARACTERISTICS @25 °C (unless otherwise stated)
SYM.
V
GS(off)
I
DSS
C
iss
C
rss
g
fs
g
os
CHARACTERISTIC
Gate to Source Cutoff Voltage
Source to Drain Saturation Current
Input Capacitance
Reverse Transfer Capacitance
Forward Transconductance
Output Conductance
3
TYP
U308
MIN
-1
12
MAX
-6.5
75
5
2.5
10
250
U309
MIN
-1
12
MAX
-4
30
5
2.5
10
250
U310
MIN
-2.5
24
MAX
-6.5
75
5
2.5
10
250
UNIT
V
mA
pF
mS
µS
CONDITIONS
V
DS
= 10V, I
D
= 1nA
V
DS
= 10V, V
GS
= 0V
V
DS
= 10V, V
GS
= -10V
f
= 1MHz
V
DS
= 10V, I
D
= 10mA
f
= 1kHz
4
1.9
14
110
SOT-23
0.89
1.03
1
0.210
0.170
1.78
2.05
0.37
0.51
3
2.80
3.04
2
1.20
1.40
2.10
2.64
0.085
0.180
0.89
1.12
0.013
0.100
0.55
DIMENSIONS IN
MILLIMETERS
NOTES
1. Absolute maximum ratings are limiting values above which serviceability may be impaired.
2. Measured at optimum input noise match.
3.
Pulse test: PW
≤
300µs, Duty Cycle
≤
3%
4.
Derate 2.8mW/ºC above 25ºC
5.
Derate 4mW/ºC above 25ºC
Information furnished by Linear Integrated Systems is believed to be accurate and reliable. However, no responsibility is assumed for its
use; nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or
otherwise under any patent or patent rights of Linear Integrated Systems.
Linear Integrated Systems (LIS) is a 25-year-old, third-generation precision semiconductor company providing
high-quality discrete components. Expertise brought to LIS is based on processes and products developed at
Amelco, Union Carbide, Intersil and Micro Power Systems by company President John H. Hall. Hall, a protégé
of Silicon Valley legend Dr. Jean Hoerni, was the director of IC Development at Union Carbide, co-founder and
vice president of R&D at Intersil, and founder/president of Micro Power Systems.
Linear Integrated Systems
•
4042 Clipper Court • Fremont, CA 94538 • Tel: 510 490-9160 • Fax: 510 353-0261
1/31/12
Rev#A5 ECN#U/J/SST 308
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