LSU310(TO-18) datasheet, PDF - EEWORLD Datasheet

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LSU310(TO-18): DescriptionTransistor; CategoryDiscrete semiconductor The transistor; File Size291KB，1 Pages; ManufacturerMicross; Websitehttps://www.micross.com

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LSU310(TO-18) Overview

Transistor

LSU310(TO-18) Parametric

Parameter Name	Attribute value
Maker	Micross
package instruction	,
Reach Compliance Code	compliant

LSU310(TO-18) Preview

U310

N-CHANNEL JFET

Linear Systems replaces discontinued Siliconix U310

The LSU310 is a high frequency n-channel JFET

offering a wide range and low noise performance. The

hermetically sealed TO-18 package is well suited for

high reliability and harsh environment applications.

(See Packaging Information).

FEATURES

DIRECT REPLACEMENT FOR SILICONIX LSU310

OUTSTANDING HIGH FREQUENCY GAIN

LOW HIGH FREQUENCY NOISE

ABSOLUTE MAXIMUM RATINGS @ 25°C

1

G

pg

= 11.5dB

NF = 2.7dB

Maximum Temperatures

Storage Temperature

‐55°C to +150°C

High Power Low Noise gain

Operating Junction Temperature

‐55°C to +135°C

Dynamic Range greater than 100dB

Maximum Power Dissipation

Easily matched to 75Ω input

Continuous Power Dissipation

500mW

LSU310 Applications:

MAXIMUM CURRENT

Gate Current

10mA

UHV / VHF Amplifiers

MAXIMUM VOLTAGES

Mixers

Gate to Drain Voltage or Gate to Source Voltage

‐25V

Oscillators

LSU310 ELECTRICAL CHARACTERISTICS @ 25°C (unless otherwise noted)

SYMBOL

CHARACTERISTIC

MIN

TYP.

MAX

UNIT

CONDITIONS

BV

GSS

Gate to Source Breakdown Voltage

‐25

‐‐

V

DS

= 0V, I

G

= ‐1µA

V

GS(F)

Gate to Source Forward Voltage

0.7

‐‐

1

V

DS

= 0V, I

G

= 10mA

V

GS(off)

Gate to Source Cutoff Voltage

‐2

‐‐

‐6.5

V

DS

= 10V, I

D

= 1nA

2

I

DSS

Drain to Source Saturation Current

24

‐‐

60

mA

V

DS

= 10V, V

GS

= 0V

I

G

Gate Operating Current (Note 3)

‐‐

‐15

‐‐

pA

V

DG

= 9V, I

D

= 10mA

r

DS(on)

Drain to Source On Resistance

‐‐

35

‐‐

Ω

V

GS

= 0V, I

D

= 1mA

LSU310 DYNAMIC ELECTRICAL CHARACTERISTICS @ 25°C (unless otherwise noted)

SYMBOL

CHARACTERISTIC

MIN

TYP.

MAX

UNIT

CONDITIONS

g

fs

Forward Transconductance

8

14

‐‐

mS

V

DS

= 10V, I

D

= 10mA , f = 1kHz

g

os

Output Conductance

‐‐

110

250

µS

C

iss

Input Capacitance

‐‐

4

5

pF

V

DS

= 10V, V

GS

= ‐10V , f = 1MHz

C

rss

Reverse Transfer Capacitance

‐‐

1.9

2.5

e

n

Equivalent Noise Voltage

6

‐‐

nV/√Hz

V

DS

= 10V, I

D

= 10mA , f = 100Hz

LSU310 HIGH FREQUENCY CHARACTERISTICS @ 25°C (unless otherwise noted)

SYMBOL

CHARACTERISTIC

MIN

TYP

MAX

UNIT

CONDITIONS

LSU310 Benefits:

Click To Buy

Noise Figure

Power Gain

3

Forward Transconductance

Output Conductance

f = 105MHz

f = 450MHz

f = 105MHz

f = 450MHz

f = 105MHz

f = 450MHz

f = 105MHz

f = 450MHz

‐‐

1.5

2.7

16

11.5

14

13

0.16

0.55

‐‐

dB

mS

Available Packages:

LSU310 in TO-18

LSU310 in bare die.

TO-18 (Bottom View)

NF

G

pg

g

fg

g

og

V

DS

= 10V, I

D

= 10mA

Note 1 ‐ Absolute maximum ratings are limiting values above which LSU310 serviceability may be impaired.

Note 2 ‐ Pulse test : PW ≤ 300µs, Duty Cycle ≤ 3%

Note 3 ‐ Measured at optimum input noise match

Micross Components

Europe

Tel: +44 1603 788967

Email:

chipcomponents@micross.com

Web:

http://www.micross.com/distribution

Please contact Micross for full

package and die dimensions

Information furnished by Linear Integrated Systems and Micross Components is believed to be accurate and reliable. However, no responsibility is assumed for its use; nor for any infringement of patents or

other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Linear Integrated Systems.

Micross Components Ltd, United Kingdom, Tel: +44 1603 788967, Fax: +44 1603788920, Email:

chipcomponents@micross.com

Web:

www.micross.com/distribution.aspx

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