ZXTS1000E6
12V PNP SILICON LOW SATURATION SWITCHING TRANSISTOR
AND SCHOTTKY DIODE
SUMMARY
Transistor: V
CEO
=-12V, I
C
= -1.25A
Schottky Diode: V
R
=40V; I
C
= 0.5A
DESCRIPTION
A PNP transistor and a Schottky Barrier diode contained in a single 6 leaded
SOT23 package.
SOT23-6
FEATURES
•
•
•
•
•
Low Saturation Transistor
High Gain - 300 minimum
Low V
F
, fast switching Schottky
Mobile telecomms, PCMCIA & SCSI
DC-DC Conversion
APPLICATIONS
ORDERING INFORMATION
DEVICE
ZXTS1000E6TA
ZXTS1000E6TC
DEVICE MARKING
1000
REEL SIZE
(inches)
7
13
TAPE WIDTH
(mm)
8mm embossed
8mm embossed
QUANTITY
PER REEL
3000 units
10000 units
Top View
ISSUE 1 - NOVEMBER 2000
1
ZXTS1000E6
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
Transistor
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Continuous Collector Current
Schottky Diode
Continuous Reverse Voltage
Forward Current
Non Repetitive Forward Current t≤100µs
t≤ 10ms
Package
Power Dissipation at T
amb
=25°C
single die “on”
both die “on”
Storage Temperature Range
Junction Temperature
P
D
T
stg
T
j
0.725
0.885
-55 to +150
125
W
W
°C
°C
V
R
I
F
I
FSM
40
0.5
6.75
3
V
A
A
A
V
CBO
V
CEO
V
EBO
I
C
-12
-12
-5
-1.25
V
V
V
A
SYMBOL
VALUE
UNIT
THERMAL RESISTANCE
PARAMETER
Junction to Ambient (a)
single die “on”
both die “on”
SYMBOL
R
θJA
R
θJA
VALUE
138
113
UNIT
°C/W
°C/W
NOTES
(a) For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper,
in still air conditions
ISSUE 1 - NOVEMBER 2000
2
ZXTS1000E6
TRANSISTOR TYPICAL CHARACTERISTICS
0.4
+25°C
0.4
IC/IB=50
V
CE(sat)
- (V)
IC/IB=10
IC/IB=50
IC/IB=100
V
CE(sat)
- (V)
0.3
0.3
-55°C
+25°C
+100°C
+150°C
0.2
0.2
0.1
0.1
0
1m
10m
100m
1
10
0
1m
10m
100m
1
10
I
C
- Collector Current (A)
V
CE(sat)
v I
C
I
C
- Collector Current (A)
V
CE(sat)
v I
C
800
VCE=2V
1.0
0.8
IC/IB=50
h
FE
- Typical Gain
V
BE(sat)
- (V)
600
+100°C
0.6
0.4
0.2
0
-55°C
+25°C
+100°C
+150°C
400
+25°C
200
-55°C
0
1m
10m
100m
1
I
C
- Collector Current (A)
10
1m
10m
100m
1
10
h
FE
v I
C
I
C
- Collector Current (A)
V
BE(sat)
v I
C
1.0
0.8
10
I
C
- Collector Current (A)
V
BE(on)
- (V)
1
DC
1s
100ms
10ms
1ms
100µs
0.6
0.4
0.2
0
-55°C
+25°C
+100°C
+150°C
100m
1m
10m
100m
1
10
10m
100m
1
10
100
I
C
- Collector Current (A)
V
BE(on)
v I
C
V
CE
- Collector Emitter Voltage (V)
Safe Operating Area
ISSUE 1 - NOVEMBER 2000
3
ZXTS1000E6
ELECTRICAL CHARACTERISTICS (at T
amb
= 25°C unless otherwise stated).
PARAMETER
SYMBOL MIN.
TYP.
MAX.
UNIT
CONDITIONS.
TRANSISTOR ELECTRICAL CHARACTERISTICS
Collector-Base Breakdown
Voltage
Collector-Emitter Breakdown
Voltage
Emitter-Base Breakdown Voltage
Collector Cut-Off Current
Emitter Cut-Off Current
Collector Emitter Cut-Off Current
Collector-Emitter Saturation
Voltage
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
I
EBO
I
CES
V
CE(sat)
-25
-55
-110
-160
-185
-990
-850
300
300
200
125
75
30
490
450
340
250
140
80
220
15
50
135
MHz
pF
ns
ns
-12
-12
-5
-10
-10
-10
-40
-100
-175
-215
-240
-1100
-1000
V
V
V
nA
nA
nA
mV
mV
mV
mV
mV
mV
mV
I
C
= -100µA
I
C
= -10mA*
I
E
= -100µA
V
CB
=-10V
V
EB
=-4V
V
CES =-10V
I
C
=
I
C
=
I
C
=
I
C
=
I
C
=
-0.1A, I
B
= -10mA*
-0.25A, I
B
=-10 mA*
-0.5A, I
B
=-10 mA*
-1A, I
B
= -50mA*
-1.25A, I
B
= -100mA*
Base-Emitter Saturation Voltage
Base-Emitter Turn-On Voltage
Static Forward Current Transfer
Ratio
V
BE(sat)
V
BE(on)
h
FE
I
C
= -1.25A, I
B
= -100mA*
I
C
= -1.25A, V
CE
= 2V*
I
C
=
I
C
=
I
C
=
I
C
=
I
C
=
I
C
=
-10mA, V
CE
=-2V*
-0.1A, V
CE
= -2V*
-0.5A, V
CE
= -2V*
-1.25A, V
CE
=-2V*
-2A, V
CE
= -2V*
-3A, V
CE
= -2V*
Transition Frequency
Output Capacitance
Turn-On Time
Turn-Off Time
f
T
C
obo
t
(on)
t
(off)
I
C
= -50mA, V
CE
=-10 V
f= 100MHz
V
CB
= -10V, f=1MHz
V
CC
= -10V, I
C
=-1A
I
B1
=I
B2
=-100mA
SCHOTTKY DIODE ELECTRICAL CHARACTERISTICS
Reverse Breakdown Voltage
Forward Voltage
V
(BR)R
V
F
40
60
270
300
370
425
550
640
810
15
20
10
300
350
460
550
670
780
1050
40
V
mV
mV
mV
mV
mV
mV
mV
µA
pF
ns
I
R
=200µA
I
F
=50mA*
I
F
=100mA*
I
F
=250mA*
I
F
=500mA*
I
F
=750mA*
I
F
=1000mA*
I
F
=1500mA*
V
R
=30V
f=1MHz,V
R
=30V
switched from
I
F
= 500mA to I
R
= 500mA
Measured at I
R
= 50mA
Reverse Current
Diode Capacitance
Reverse Recovery Time
I
R
C
D
t
rr
*Measured under pulsed conditions.
ISSUE 1 - NOVEMBER 2000
4
ZXTS1000E6
DIODE TYPICAL CHARACTERISTICS
ISSUE 1 - NOVEMBER 2000
5
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