HM62Y8201H Series
16M High Speed SRAM (2-Mword
×
8-bit)
ADE-203-956 (Z)
Preliminary, Rev. 0.0
Sept. 15, 1998
Description
The HM62Y8201H Series is an asynchronous high speed static RAM organized as 2-Mword
×
8-bit. It has
realized high speed access time by employing the most advanced CMOS process and high speed circuit
designing technology. It is most appropriate for the application which requires high speed, high density
memory and wide bit width configuration, such as cache and buffer memory in system. It is packaged in
44-pin plastic TSOPII.
Features
•
Single 2.5 V supply: 2.5 V
±
0.2 V
•
Access time 12 ns/15 ns (max)
•
Completely static memory
No clock or timing strobe required
•
Equal access and cycle times
•
Operating current: 150 mA/130 mA (max)
•
TTL standby current: 60 mA/50 mA (max)
•
CMOS standby current: 30 mA/10 mA (max)
: 3.0 mA /1.5 mA (max) (L-Version)
•
Data retention current: 3.0 mA /1.5 mA (max) (L-Version)
•
Data retention voltage: 2.0 V (min) (L-Version)
•
Center V
CC
and V
SS
type pinout
Ordering Information
Type No.
HM62Y8201HTT-12
HM62Y8201HTT-15
HM62Y8201HLTT-12
HM62Y8201HLTT-15
Access time
12 ns
15 ns
12 ns
15 ns
Package
400-mil 44-pin plastic TSOPII (TTP-44DE)
HM62Y8201H Series
Operating Table
CS
H
L
L
L
L
Note:
WE
×
H
L
L
H
H: V
IH
, L: V
IL
,
×:
V
IH
or V
IL
OE
×
L
H
L
H
I/O
High-Z
Dout
Din
Din
High-Z
Operation
Standby
Read
Write
Write
Output disable
Absolute Maximum Ratings
Parameter
Power supply voltage relative to V
SS
Terminal voltage on any pin relative to V
SS
Power dissipation
Storage temperature
Storage temperature under bias
Symbol
V
CC
V
T
P
T
Tstg
Tbias
Value
–0.5 to +3.6
–0.5*
1
to V
CC
+0.5*
2
(≤ 3.6 V (max))
1.0
–55 to +125
–10 to +85
Unit
V
V
W
°C
°C
Notes: 1. V
T
(min) = –1.5 V for pulse width (under shoot)
≤
5 ns
2. V
T
(max) = V
CC
+1.5
V for pulse with (over shoot)
≤
5 ns
DC Operating Conditions
Parameter
Supply voltage
Symbol
V
CC
V
SS
Input high voltage
Input low voltage
Ambient temperature
Notes: 1.
2.
3.
4.
V
IH
V
IL
Ta
Min
2.3
0
1.7
–0.3*
1
0
Typ
2.5
0
—
—
—
Max
2.7
0
V
CC
+ 0.3*
2
0.7
70
Unit
V
V
V
V
°C
Notes
3
4
V
IL
(min) = –1.5 V for pulse width (under shoot)
≤
5 ns
V
IH
(max) = V
CC
+ 1.5 V for pulse width (over shoot)
≤
5 ns
The supply voltage with all V
CC
pins must be on the same level.
The supply voltage with all V
SS
pins must be on the same level.
4
HM62Y8201H Series
DC Characteristics
Parameter
Input leakage current
Output leakage current
Operating current
Symbol Min
II
LI
I
II
LO
I
12 ns cycle I
CC
—
—
—
Typ*
1
—
—
—
Max
2
2
150
Unit
µA
µA
mA
Test conditions
Vin = V
SS
to V
CC
Vin = V
SS
to V
CC
Min cycle
CS
= V
IL
, lout = 0 mA
Other inputs = V
IH
/V
IL
15 ns cycle I
CC
Standby current
12 ns cycle I
SB
—
—
—
—
130
60
mA
Min cycle
CS
= V
IH
,
Other inputs = V
IH
/V
IL
15 ns cycle I
SB
12 ns cycle I
SB1
—
—
—
—
50
30
mA
f = 0 MHz
V
CC
≥
CS
≥
V
CC
- 0.2 V,
(1) 0 V
≤
Vin
≤
0.2 V or
(2) V
CC
≥
Vin
≥
V
CC
- 0.2 V
I
SB1
*
2
15 ns cycle I
SB1
I
SB1
*
2
Output high voltage
Output low voltage
V
OH
V
OL
—
—
—
1.7
—
—
—
—
—
—
3.0
10
1.5
—
0.7
V
V
I
OH
= –2 mA
I
OL
= 2 mA
Notes: 1. Typical values are at V
CC
= 2.5 V, Ta = +25°C and not guaranteed.
2. This characteristics is guaranteed only for L-version.
Capacitance
(Ta =
+25°C,
f = 1.0 MHz)
Parameter
Input capacitance
Input/output capacitance
Note:
Symbol
Cin
C
I/O
Min
—
—
Typ
—
—
Max
6
8
Unit
pF
pF
Test conditions Note
Vin = 0 V
V
I/O
= 0 V
1
1
1. This parameter is sampled and not 100% tested.
5
Microcontroller MCU
京公网安备 11010802033920号
EEWORLD
