RECTRON
SEMICONDUCTOR
TECHNICAL SPECIFICATION
RS2001M
THRU
RS2007M
SINGLE-PHASE SILICON BRIDGE RECTIFIER
VOLTAGE RANGE 50 to 1000 Volts CURRENT 20 Amperes
FEATURES
*
*
*
*
*
*
Low leakage
Low forward voltage
Mounting position: Any
Surge overload rating: 300 amperes peak
Ideal for printed cikcuit boakds
High forward surge current capability
RS-20M
.189 (4.8)
1.193 (30.3)
1.169 (29.7)
.197 (5)
MECHANICAL DATA
* UL listed the recognized component directory, file #E94233
* Epoxy: Device has UL flammability classification 94V-O
.150 (3.8)
.134 (3.4)
.800 (20.3)
.697 (17.7)
.441 (11.2)
.425 (10.8)
.173 (4.4)
.165 (4.2)
.150 (3.8)
.708 (18.0)
.669 (17.0)
.106 (2.7)
.096 (2.3)
.094 (2.4)
.078 (2.0)
.114 (2.9)
.098 (2.5)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25 C ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
o
.043 (1.1)
.035 (0.9)
.402 (10.2)
.386 (9.8)
.303 (7.7)
.287 (7.3)
.303 (7.7)
.287 (7.3)
.031 (0.8)
.023 (0.6)
Dimensions in inches and (millimeters)
-
MAXIMUM RATINGS
(At T
A
= 25
o
C unless otherwise noted)
RATINGS
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Bridge Input Voltage
Maximum DC Blocking Voltage
Maximum Average Forward Rectified Output Current at Tc = 100
o
C
with heatsink
Peak Forward Surge Current 8.3 ms single half sine-wave
superimposed on rated load
Operating and Storage Temperature Range
T
J,
T
STG
-55 to + 150
0
SYMBOL
V
RRM
V
RMS
V
DC
I
O
I
FSM
RS2001M RS2002M RS2003M RS2004M RS2005M RS2006M RS2007M UNITS
50
35
50
100
70
100
200
140
200
400
280
400
20
300
600
420
600
800
560
800
1000
700
1000
Volts
Volts
Volts
Amps
Amps
C
ELECTRICAL CHARACTERISTICS
(At T
A
= 25 C unless otherwise noted)
CHARACTERISTICS
Maximum Forward Voltage Drop per element at 10A DC
Maximum Reverse Current at Rated
DC Blocking Voltage per element
o
@T
A
= 25 C
o
SYMBOL
V
F
I
R
RS2001M RS2002M RS2003M RS2004M RS2005M RS2006M RS2007M UNITS
1.1
10
0.2
Volts
uAmps
mAmps
2001-5
@T
C
= 100 C
o
f.134 (3.1)
.122 (3.1)
RATING AND CHARACTERISTIC CURVES (RS2001M THRU RS2007M)
TYPICAL INSTANTANEOUS FORWARD
CHARACTERISTICS
INSTANTANEOUS FORWARD CURRENT, (A)
POWER DISSIPATION
60
sine wave
Tj=150
30
20
10
5
2
1
0.5
0.2
0.1
0.2
0.4
0.6
0.8
1
pulse test
per one diode
TC = 150 (TYP)
POWER DISSIPATION P
F
(W)
50
40
T
C
= 25 (TYP)
30
20
10
0
1.2
1.4
1.6
0
4
8
12
16
20
24
INSTANTANEOUS FORWARD VOLTAGE, (V)
SURGE FORWARD CURRENT CAPABILITY
PEAK FORWARD SURGE CURRENT, (A)
AVERAGE RECTIFIED FORWARD CURRENT, Io (A)
TYPICAL FORWARD CURRENT
DERATING CURVE
4
AVERAGE FORWARD CURRENT, (A)
on glass-epoxi substrate
300
sine wave
0
I
FSM
8.3ms 8.3ms
3
250
1 cycle
non-repetitive
Tj=25
P.C.B
soldering land 5mmf
sine wave
R-load
free in air
2
200
1
150
1
2
5
10
20
50
100
0
0
40
80
120
)
160
NUMBER OF CYCLE
TYPICAL FORWARD CURRENT
DERATING CURVE
22
AVERAGE FORWARD CURRENT, (A)
AMBIENT TEMPERATURE, (
CONTACT THERMAL RESISTANCE fcf
1
with thermal compound
heatsink
Tc
Tc
/W)
20
0.9
18
sine wave
R-load
on heatsink
THERMAL RESISTANCE (
0.8
0.7
16
0.6
14
0.5
0.4
12
80
90
100 110 120 130 140
CASE TEMPERATURE, (
)
150 160
2
3
4
5
6
7
8
MOUNTING TORQUE (Kg.cm)
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