EEWORLDEEWORLDEEWORLD

Part Number

Search

NAND02GW3B3BN6F

Description
256MX8 FLASH 3V PROM, 35ns, PDSO48, 12 X 20 MM, ROHS COMPLIANT, PLASTIC, TSOP-48
Categorystorage    storage   
File Size1MB,59 Pages
ManufacturerSTMicroelectronics
Websitehttp://www.st.com/
Environmental Compliance
Download Datasheet Parametric View All

NAND02GW3B3BN6F Overview

256MX8 FLASH 3V PROM, 35ns, PDSO48, 12 X 20 MM, ROHS COMPLIANT, PLASTIC, TSOP-48

NAND02GW3B3BN6F Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerSTMicroelectronics
Parts packaging codeTSOP
package instructionTSOP1,
Contacts48
Reach Compliance Codecompliant
ECCN code3A991.B.1.A
Maximum access time35 ns
JESD-30 codeR-PDSO-G48
JESD-609 codee3
length18.4 mm
memory density2147483648 bit
Memory IC TypeFLASH
memory width8
Number of functions1
Number of terminals48
word count268435456 words
character code256000000
Operating modeASYNCHRONOUS
Maximum operating temperature85 °C
Minimum operating temperature-40 °C
organize256MX8
Package body materialPLASTIC/EPOXY
encapsulated codeTSOP1
Package shapeRECTANGULAR
Package formSMALL OUTLINE, THIN PROFILE
Parallel/SerialPARALLEL
Peak Reflow Temperature (Celsius)260
Programming voltage3 V
Certification statusNot Qualified
Maximum seat height1.2 mm
Maximum supply voltage (Vsup)3.6 V
Minimum supply voltage (Vsup)2.7 V
Nominal supply voltage (Vsup)3 V
surface mountYES
technologyCMOS
Temperature levelINDUSTRIAL
Terminal surfaceTin (Sn)
Terminal formGULL WING
Terminal pitch0.5 mm
Terminal locationDUAL
Maximum time at peak reflow temperatureNOT SPECIFIED
width12 mm
NAND512-B, NAND01G-B NAND02G-B
NAND04G-B NAND08G-B
512 Mbit, 1 Gbit, 2 Gbit, 4 Gbit, 8 Gbit
2112 Byte/1056 Word Page, 1.8V/3V, NAND Flash Memory
PRELIMINARY DATA
FEATURES SUMMARY
HIGH DENSITY NAND FLASH MEMORIES
– Up to 8 Gbit memory array
– Up to 64Mbit spare area
– Cost effective solutions for mass storage
applications
NAND INTERFACE
– x8 or x16 bus width
– Multiplexed Address/ Data
– Pinout compatibility for all densities
SUPPLY VOLTAGE
– 1.8V device: V
DD
= 1.7 to 1.95V
– 3.0V device: V
DD
= 2.7 to 3.6V
PAGE SIZE
– x8 device: (2048 + 64 spare) Bytes
– x16 device: (1024 + 32 spare) Words
BLOCK SIZE
– x8 device: (128K + 4K spare) Bytes
– x16 device: (64K + 2K spare) Words
PAGE READ / PROGRAM
– Random access: 25µs (max)
– Sequential access: 50ns (min)
– Page program time: 300µs (typ)
COPY BACK PROGRAM MODE
– Fast page copy without external buffering
CACHE PROGRAM AND CACHE READ
MODES
– Internal Cache Register to improve the
program and read throughputs
FAST BLOCK ERASE
– Block erase time: 2ms (typ)
STATUS REGISTER
ELECTRONIC SIGNATURE
CHIP ENABLE ‘DON’T CARE’
– for simple interface with microcontroller
AUTOMATIC PAGE 0 READ AT POWER-UP
– Boot from NAND support
SERIAL NUMBER OPTION
Figure 1. Packages
TSOP48 12 x 20mm
USOP48 12 x 17 x 0.65mm
FBGA
VFBGA63 9.5 x 12 x 1mm
TFBGA63 9.5 x 12 x 1.2mm
LFBGA63 9.5 x 12 x 1.4mm
DATA PROTECTION
– Hardware and Software Block Locking
– Hardware Program/Erase locked during
Power transitions
DATA INTEGRITY
– 100,000 Program/Erase cycles
– 10 years Data Retention
RoHS COMPLIANCE
– Lead-Free Components are Compliant
with the RoHS Directive
DEVELOPMENT TOOLS
– Error Correction Code software and
hardware models
– Bad Blocks Management and Wear
Leveling algorithms
– PC Demo board with simulation software
– File System OS Native reference software
– Hardware simulation models
1/59
February 2005
This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to change without notice.
【With simple image recognition】Beauty Spot the Difference Cheater
[i=s]This post was last edited by lzwml on 2016-3-1 15:34[/i] This is a toy I made many years ago. As the name suggests, it is a cheating tool for the spot the difference game. To put it simply, it ta...
lzwml Linux and Android
Some methods of debugging CCS 5 programs
When using CCS 5 for single-step debugging, how can I jump out directly when I encounter __delay_cycles(782000);? This does not seem to be a function? ? ? How can I jump out if it is a for loop statem...
s364147694 Microcontroller MCU
How to delete these lines in AD15
[i=s] This post was last edited by 14101603 on 2018-9-13 12:42 [/i] How to delete these lines in AD15? The drawing shortcut key is used to pass through the hole. Is it an error operation? I can't dele...
14101603 PCB Design
LPC11U14 implements SD card USB disk
This experiment was successfully verified on the LPC1114/LPC1343/LPC11U14 development board designed by me: Let me show you the pictures first. Here are three types of chips and three types of develop...
zhaojun_xf NXP MCU
Some important industry exhibitions and seminars held in Beijing in October 2012
China International Optoelectronics Industry Expo and the 17th China International Laser, Optoelectronics and Optical Display Products Exhibition Venue: China International Exhibition Center, No. 6, S...
jameswangsynnex Industrial Control Electronics
82 AD conversion design experience summary!
I saw a blog post about the basic issues in AD conversion design, so I reposted it to share with you to understand data converter errors and parameters.1. How to select signal conditioning devices bef...
ohahaha Analog electronics

EEWorld
subscription
account

EEWorld
service
account

Automotive
development
circle

Robot
development
community

Index Files: 1888  815  2917  810  626  39  17  59  13  11 
Datasheet   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
Room 1530, 15th Floor, Building B, No. 18 Zhongguancun Street, Haidian District, Beijing Telephone: (010) 82350740 Postal Code: 100190
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved 京ICP证060456号 京ICP备10001474号-1 电信业务审批[2006]字第258号函 京公网安备 11010802033920号