AS58C1001DCJ-25/883C datasheet, PDF

Datasheet> All Categories > storage> storage> AS58C1001DCJ-25/883C

AS58C1001DCJ-25/883C: DescriptionEEPROM, 128KX8, 250ns, Parallel, CMOS, CDSO32, SOJ-32; Categorystorage storage; File Size243KB，19 Pages; ManufacturerMicross; Websitehttps://www.micross.com

Download Datasheet Parametric Compare View All

AS58C1001DCJ-25/883C Overview

EEPROM, 128KX8, 250ns, Parallel, CMOS, CDSO32, SOJ-32

AS58C1001DCJ-25/883C Parametric

Parameter Name	Attribute value
Maker	Micross
package instruction	SOJ,
Reach Compliance Code	compliant
Maximum access time	250 ns
JESD-30 code	R-CDSO-J32
length	20.955 mm
memory density	1048576 bit
Memory IC Type	EEPROM
memory width	8
Number of functions	1
Number of terminals	32
word count	131072 words
character code	128000
Operating mode	ASYNCHRONOUS
Maximum operating temperature	125 °C
Minimum operating temperature	-55 °C
organize	128KX8
Package body material	CERAMIC, METAL-SEALED COFIRED
encapsulated code	SOJ
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Parallel/Serial	PARALLEL
Programming voltage	5 V
Filter level	MIL-PRF-38535
Maximum seat height	3.6068 mm
Maximum supply voltage (Vsup)	5.5 V
Minimum supply voltage (Vsup)	4.5 V
Nominal supply voltage (Vsup)	5 V
surface mount	YES
technology	CMOS
Temperature level	MILITARY
Terminal form	J BEND
Terminal pitch	1.27 mm
Terminal location	DUAL
width	11.049 mm
Maximum write cycle time (tWC)	10 ms

Preview

Download Datasheet

View All

EEPROM

Austin Semiconductor, Inc.

128K x 8 EEPROM

EEPROM Memory

AVAILABLE AS MILITARY

SPECIFICATIONS

SMD 5962-38267

MIL-STD-883

AS58C1001

PIN ASSIGNMENT

(Top View)

32-Pin CFP (F & SF), 32-Pin CSOJ (DCJ)

RDY/BUSY\

A16

A14

A12

I/O 0

I/O 1

I/O 2

Vss

Vcc

A15

RES\

WE\

A13

A11

OE\

A10

CE\

I/O 7

I/O 6

I/O 5

I/O 4

I/O 3

FEATURES

High speed: 150, 200, and 250ns

Data Retention: 10 Years

Low power dissipation, active current (20mW/MHz (TYP)),

standby current (100µW(MAX))

Single +5V (+10%) power supply

Data Polling and Ready/Busy Signals

Erase/Write Endurance (10,000 cycles in a page mode)

Software Data protection Algorithm

Data Protection Circuitry during power on/off

Hardware Data Protection with RES pin

Automatic Programming:

Automatic Page Write: 10ms (MAX)

128 Byte page size

GENERAL DESCRIPTION

The Austin Semiconductor, Inc. AS58C1001 is a 1 Megabit CMOS

Electrically Erasable Programmable Read Only Memory (EEPROM)

organized as 131, 072 x 8 bits. The AS58C1001 is capable or in

system electrical Byte and Page reprogrammability.

The AS58C1001 achieves high speed access, low power consump-

tion, and a high level of reliability by employing advanced MNOS

memory technology and CMOS process and circuitry technology and

CMOS process and circuitry technology.

This device has a 128-Byte Page Programming function to make its

erase and write operations faster. The AS58C1001 features Data

Polling and a Ready/Busy signal to indicate completion of erase and

programming operations.

This EEPROM provides several levels of data protection. Hard-

ware data protection is provided with the RES pin, in addition to noise

protection on the WE signal and write inhibit during power on and off.

Software data protection is implemented using JEDEC Optional Stan-

dard algorithm.

The AS58C1001 is designed for high reliability in the most de-

manding applications. Data retention is specified for 10 years and

erase/write endurance is guaranteed to a minimum of 10,000 cycles in

the Page Mode.

OPTIONS

MARKINGS

Timing

150ns access

-15

200ns access

-20

250ns access

-25

Packages

Ceramic Flat Pack

Radiation Shielded Ceramic FP* SF

Ceramic SOJ

DCJ

Operating Temperature Ranges

-Military (-55

C to +125

-Industrial (-40

C to +85

No. 306

No. 305

No. 508

*NOTE: Package lid is connected to ground (Vss).

PIN NAME

A0 to A16

I/O0 to I/O7

OE\

CE\

WE\

Vcc

Vss

RDY/Busy\

RES\

AS58C1001

Rev. 4.0 3/01

FUNCTION

Address input

Data input/output

Output enable

Chip enable

Write enable

Power supply

Ground

Ready busy

Reset

For more products and information

please visit our web site at

www.austinsemiconductor.com

Austin Semiconductor, Inc. reserves the right to change products or specifications without notice.

AS58C1001DCJ-25/883C Related Products

	AS58C1001DCJ-25/883C	AS58C1001F-25/IT	AS58C1001F-25/XT	AS58C1001SF-25/883C	AS58C1001SF-25/XT	AS58C1001DCJ-20/883C	AS58C1001F-15/XT
Description	EEPROM, 128KX8, 250ns, Parallel, CMOS, CDSO32, SOJ-32	EEPROM, 128KX8, 250ns, Parallel, CMOS, CDFP32, FP-32	EEPROM, 128KX8, 250ns, Parallel, CMOS, CDFP32, FP-32	EEPROM, 128KX8, 250ns, Parallel, CMOS, CDFP32, DFP-32	EEPROM, 128KX8, 250ns, Parallel, CMOS, CDFP32, FP-32	EEPROM, 128KX8, 200ns, Parallel, CMOS, CDSO32, SOJ-32	EEPROM, 128KX8, 150ns, Parallel, CMOS, CDFP32, FP-32
package instruction	SOJ,	DFP,	DFP,	DFP-32	DFP,	SOJ,	DFP,
Reach Compliance Code	compliant	compliant	compliant	compliant	compliant	compliant	compliant
Maximum access time	250 ns	250 ns	250 ns	250 ns	250 ns	200 ns	150 ns
JESD-30 code	R-CDSO-J32	R-CDFP-F32	R-CDFP-F32	R-CDFP-F32	R-CDFP-F32	R-CDSO-J32	R-CDFP-F32
length	20.955 mm	20.828 mm	20.828 mm	20.828 mm	20.828 mm	20.955 mm	20.828 mm
memory density	1048576 bit	1048576 bit	1048576 bit	1048576 bit	1048576 bit	1048576 bit	1048576 bit
Memory IC Type	EEPROM	EEPROM	EEPROM	EEPROM	EEPROM	EEPROM	EEPROM
memory width	8	8	8	8	8	8	8
Number of functions	1	1	1	1	1	1	1
Number of terminals	32	32	32	32	32	32	32
word count	131072 words	131072 words	131072 words	131072 words	131072 words	131072 words	131072 words
character code	128000	128000	128000	128000	128000	128000	128000
Operating mode	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS
Maximum operating temperature	125 °C	85 °C	125 °C	125 °C	125 °C	125 °C	125 °C
Minimum operating temperature	-55 °C	-40 °C	-55 °C	-55 °C	-55 °C	-55 °C	-55 °C
organize	128KX8	128KX8	128KX8	128KX8	128KX8	128KX8	128KX8
Package body material	CERAMIC, METAL-SEALED COFIRED	CERAMIC, METAL-SEALED COFIRED	CERAMIC, METAL-SEALED COFIRED	CERAMIC, METAL-SEALED COFIRED	CERAMIC, METAL-SEALED COFIRED	CERAMIC, METAL-SEALED COFIRED	CERAMIC, METAL-SEALED COFIRED
encapsulated code	SOJ	DFP	DFP	DFP	DFP	SOJ	DFP
Package shape	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR
Package form	SMALL OUTLINE	FLATPACK	FLATPACK	FLATPACK	FLATPACK	SMALL OUTLINE	FLATPACK
Parallel/Serial	PARALLEL	PARALLEL	PARALLEL	PARALLEL	PARALLEL	PARALLEL	PARALLEL
Programming voltage	5 V	5 V	5 V	5 V	5 V	5 V	5 V
Maximum seat height	3.6068 mm	3.1242 mm	3.1242 mm	3.81 mm	3.81 mm	3.6068 mm	3.1242 mm
Maximum supply voltage (Vsup)	5.5 V	5.5 V	5.5 V	5.5 V	5.5 V	5.5 V	5.5 V
Minimum supply voltage (Vsup)	4.5 V	4.5 V	4.5 V	4.5 V	4.5 V	4.5 V	4.5 V
Nominal supply voltage (Vsup)	5 V	5 V	5 V	5 V	5 V	5 V	5 V
surface mount	YES	YES	YES	YES	YES	YES	YES
technology	CMOS	CMOS	CMOS	CMOS	CMOS	CMOS	CMOS
Temperature level	MILITARY	INDUSTRIAL	MILITARY	MILITARY	MILITARY	MILITARY	MILITARY
Terminal form	J BEND	FLAT	FLAT	FLAT	FLAT	J BEND	FLAT
Terminal pitch	1.27 mm	1.27 mm	1.27 mm	1.27 mm	1.27 mm	1.27 mm	1.27 mm
Terminal location	DUAL	DUAL	DUAL	DUAL	DUAL	DUAL	DUAL
width	11.049 mm	11.049 mm	11.049 mm	11.05 mm	11.049 mm	11.049 mm	11.049 mm
Maximum write cycle time (tWC)	10 ms	10 ms	10 ms	10 ms	10 ms	10 ms	10 ms
Filter level	MIL-PRF-38535	-	MIL-PRF-38535	MIL-STD-883 Class C	MIL-PRF-38535	MIL-PRF-38535	MIL-PRF-38535
Parts packaging code	-	DFP	DFP	DFP	DFP	SOJ	DFP
Contacts	-	32	32	32	32	32	32
Is Samacsys	-	N	N	N	N	-	-
Base Number Matches	-	1	1	1	1	1	-

Recommended Resources

Current amplifier circuit structure diagram

Improved circuit diagram of old power supply

Power supply phase loss alarm circuit

Overheating protection circuit for power transistors

Agricultural insecticidal light controlled black light circuit

Thought actuation function tester

How large a fifo capacity can ep4ce6 achieve?: How large a fifo capacity can ep4ce6 achieve?...; nmgbtzyf Test/Measurement

Can connect to target board, but cannot enter debug mode: Hey guys, can you help me explain why I can't find the yellow debugging arrow after starting Debugging?...; masai1986 Microchip MCU

A student who loves electronics asked: About the measurement of triangle waves: I want to design a circuit to measure the amplitude, frequency, and slope of a triangle wave. I think for the amplitude, I can use digital-to-analog conversion to output different values at different ...; yanfang2003 Embedded System

Buying Photoelectric Conversion Device: Looking to buy a photoelectric conversion device: the device is required to output a voltage (or current) signal proportional to the light flux. This signal can be recognized by a common single-chip m...; zany.peng Embedded System

Can 74HC14 inverters be used in parallel?: Due to a design error, two 74HC14 inverters were connected in parallel. I saw relevant information that 74HC14 is a CMOS device with push-pull output, so it should not be used in parallel. Although I ...; adam_zhang41 Discrete Device

Introduction to the causes of TPS79633KTTR voltage instability: [align=center][b][img]https://e2echina.ti.com/resized-image/__size/1230x0/__key/communityserver-discussions-components-files/24/tps79633kttr.png[/img][/b][/align] [align=left]When using TPS79633KTTR, ...; alan000345 TI Technology Forum

Shortcut: L0 L1 L2 L3 L4 L5 L6 L7 L8 L9 LA LB LC LD LE LF LG LH LI LJ LK LL LM LN LO LP LQ LR LS LT LU LV LW LX LY LZ M0 M1 M2 M3 M4 M5 M6 M7 M8 M9 MA MB MC MD ME MF MG MH MI MJ MK ML MM MN MO MP MQ MR MS MT MU MV MW MX MY MZ N0 N1 N2 N3 N4 N5 N6 N7 N8 NA NB NC ND NE NF NG NH NI NJ NK NL NM NN NO NP NQ NR NS NT NU NV NX NZ O0 O1 O2 O3 OA OB OC OD OE OF OG OH OI OJ OK OL OM ON OP OQ OR OS OT OV OX OY OZ P0 P1 P2 P3 P4 P5 P6 P7 P8 P9 PA PB PC PD PE PF PG PH PI PJ PK PL PM PN PO PP PQ PR PS PT PU PV PW PX PY PZ Q1 Q2 Q3 Q4 Q5 Q6 Q8 Q9 QA QB QC QE QF QG QH QK QL QM QP QR QS QT QV QW QX QY R0 R1 R2 R3 R4 R5 R6 R7 R8 R9 RA RB RC RD RE RF RG RH RI RJ RK RL RM RN RO RP RQ RR RS RT RU RV RW RX RY RZ

Popular Components