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PDM41024LA25TSOI

Description
Standard SRAM, 128KX8, 25ns, CMOS, PDSO32
Categorystorage    storage   
File Size385KB,8 Pages
ManufacturerParadigm Technology Inc
Download Datasheet Parametric View All

PDM41024LA25TSOI Overview

Standard SRAM, 128KX8, 25ns, CMOS, PDSO32

PDM41024LA25TSOI Parametric

Parameter NameAttribute value
Is it lead-free?Contains lead
Is it Rohs certified?incompatible
MakerParadigm Technology Inc
package instructionSOJ, SOJ32,.34
Reach Compliance Codeunknown
ECCN codeEAR99
Maximum access time25 ns
I/O typeCOMMON
JESD-30 codeR-PDSO-J32
JESD-609 codee0
memory density1048576 bit
Memory IC TypeSTANDARD SRAM
memory width8
Number of functions1
Number of ports1
Number of terminals32
word count131072 words
character code128000
Operating modeASYNCHRONOUS
Maximum operating temperature85 °C
Minimum operating temperature-40 °C
organize128KX8
Output characteristics3-STATE
ExportableYES
Package body materialPLASTIC/EPOXY
encapsulated codeSOJ
Encapsulate equivalent codeSOJ32,.34
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Parallel/SerialPARALLEL
Peak Reflow Temperature (Celsius)NOT SPECIFIED
power supply5 V
Certification statusNot Qualified
Maximum standby current0.0005 A
Minimum standby current2 V
Maximum slew rate0.145 mA
Maximum supply voltage (Vsup)5.5 V
Minimum supply voltage (Vsup)4.5 V
Nominal supply voltage (Vsup)5 V
surface mountYES
technologyCMOS
Temperature levelINDUSTRIAL
Terminal surfaceTin/Lead (Sn/Pb)
Terminal formJ BEND
Terminal pitch1.27 mm
Terminal locationDUAL
Maximum time at peak reflow temperatureNOT SPECIFIED
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