IS63WV1024BLL-12HI datasheet, PDF

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IS63WV1024BLL-12HI: DescriptionStandard SRAM, 128KX8, 12ns, CMOS, PDSO32, 8 X 13.40 MM, PLASTIC, STSOP1-32; Categorystorage storage; File Size125KB，17 Pages; ManufacturerIntegrated Silicon Solution ( ISSI )

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IS63WV1024BLL-12HI Overview

Standard SRAM, 128KX8, 12ns, CMOS, PDSO32, 8 X 13.40 MM, PLASTIC, STSOP1-32

IS63WV1024BLL-12HI Parametric

Parameter Name	Attribute value
Is it lead-free?	Contains lead
Is it Rohs certified?	incompatible
Maker	Integrated Silicon Solution ( ISSI )
Parts packaging code	TSOP1
package instruction	8 X 13.40 MM, PLASTIC, STSOP1-32
Contacts	32
Reach Compliance Code	compliant
ECCN code	3A991.B.2.B
Maximum access time	12 ns
I/O type	COMMON
JESD-30 code	R-PDSO-G32
JESD-609 code	e0
length	11.8 mm
memory density	1048576 bit
Memory IC Type	STANDARD SRAM
memory width	8
Humidity sensitivity level	3
Number of functions	1
Number of terminals	32
word count	131072 words
character code	128000
Operating mode	ASYNCHRONOUS
Maximum operating temperature	85 °C
Minimum operating temperature	-40 °C
organize	128KX8
Output characteristics	3-STATE
Package body material	PLASTIC/EPOXY
encapsulated code	LSSOP
Encapsulate equivalent code	TSSOP32,.56,20
Package shape	RECTANGULAR
Package form	SMALL OUTLINE, LOW PROFILE, SHRINK PITCH
Parallel/Serial	PARALLEL
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
power supply	3.3 V
Certification status	Not Qualified
Maximum seat height	1.25 mm
Maximum standby current	0.00005 A
Minimum standby current	1.8 V
Maximum slew rate	0.045 mA
Maximum supply voltage (Vsup)	3.63 V
Minimum supply voltage (Vsup)	2.97 V
Nominal supply voltage (Vsup)	3.3 V
surface mount	YES
technology	CMOS
Temperature level	INDUSTRIAL
Terminal surface	Tin/Lead (Sn/Pb)
Terminal form	GULL WING
Terminal pitch	0.5 mm
Terminal location	DUAL
Maximum time at peak reflow temperature	NOT SPECIFIED
width	8 mm

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IS63WV1024BLL

IS64WV1024BLL

128K x 8 HIGH-SPEED CMOS STATIC RAM

ISSI

DECEMBER 2005

FEATURES

• High-speed access time:

12 ns: 3.3V + 10%

15 ns: 2.5V – 3.6V

• High-performance, low-power CMOS process

• CMOS Low Power Operation

50 mW (typical) operating current

W (typical) standby current

• Multiple center power and ground pins for

greater noise immunity

• Easy memory expansion with

and

options

•

power-down

• Fully static operation: no clock or refresh

required

• TTL compatible inputs and outputs

• Packages available:

– 32-pin TSOP (Type II)

– 32-pin sTSOP (Type I)

– 36-Ball miniBGA (6mm x 8mm)

– 32-pin 300-mil SOJ

• Lead-free available

DESCRIPTION

The

ISSI

IS63/64WV1024BLL is a very high-speed, low

power, 131,072-word by 8-bit CMOS static RAM. The

IS63/64WV1024BLL is fabricated using

ISSI

high-performance CMOS technology. This highly reliable

process coupled with innovative circuit design

techniques, yields higher performance and low power

consumption devices.

When

is HIGH (deselected), the device assumes a

standby mode at which the power dissipation can be

reduced down to 25 µW (typical) with CMOS input levels.

The IS63/64WV1024BLL operates from a single V

power supply. The IS63/64WV1024BLL is available in

32-pin TSOP (Type II), 32-pin sTSOP (Type I), 36-Ball

miniBGA (6mm x 8mm), and 32-pin SOJ (300-mil)

packages.

FUNCTIONAL BLOCK DIAGRAM

A0-A16

DECODER

128K X 8

MEMORY ARRAY

VDD

GND

I/O

DATA

CIRCUIT

I/O0-I/O7

COLUMN I/O

without notice. ISSI assumes no liability arising out of the application or use of any information, products or services described herein. Customers are advised to

obtain the latest version of this device specification before relying on any published information and before placing orders for products.

CONTROL

CIRCUIT

Integrated Silicon Solution, Inc. — www.issi.com —

1-800-379-4774

Rev. A

12/01/05

IS63WV1024BLL-12HI Related Products

	IS63WV1024BLL-12HI	IS64WV1024BLL-15HLA3	IS64WV1024BLL-15TA3	IS63WV1024BLL-12JI	IS64WV1024BLL-15TLA3	IS64WV1024BLL-15HA3	IS63WV1024BLL-12BI
Description	Standard SRAM, 128KX8, 12ns, CMOS, PDSO32, 8 X 13.40 MM, PLASTIC, STSOP1-32	Standard SRAM, 128KX8, 15ns, CMOS, PDSO32, 8 X 13.40 MM, LEAD FREE, PLASTIC, STSOP1-32	128KX8 STANDARD SRAM, 15ns, PDSO32, PLASTIC, TSOP2-32	Standard SRAM, 128KX8, 12ns, CMOS, PDSO32, 0.300 INCH, PLASTIC, SOJ-32	Standard SRAM, 128KX8, 15ns, CMOS, PDSO32, LEAD FREE, PLASTIC, TSOP2-32	Standard SRAM, 128KX8, 15ns, CMOS, PDSO32, 8 X 13.40 MM, PLASTIC, STSOP1-32	Standard SRAM, 128KX8, 12ns, CMOS, PBGA48, 6 X 8 MM, MINI, BGA-48
Is it lead-free?	Contains lead	Lead free	Contains lead	Contains lead	Lead free	Contains lead	Contains lead
Is it Rohs certified?	incompatible	conform to	incompatible	incompatible	conform to	incompatible	incompatible
Parts packaging code	TSOP1	TSOP1	TSOP2	SOJ	TSOP2	TSOP1	BGA
package instruction	8 X 13.40 MM, PLASTIC, STSOP1-32	LSSOP, TSSOP32,.56,20	PLASTIC, TSOP2-32	0.300 INCH, PLASTIC, SOJ-32	TSOP2, TSOP32,.46	8 X 13.40 MM, PLASTIC, STSOP1-32	TFBGA, BGA48,6X8,30
Contacts	32	32	32	32	32	32	48
Reach Compliance Code	compliant	compliant	compliant	compliant	compliant	compli	compli
ECCN code	3A991.B.2.B	3A991.B.2.B	3A991.B.2.B	3A991.B.2.B	3A991.B.2.B	3A991.B.2.B	3A991.B.2.B
Maximum access time	12 ns	15 ns	15 ns	12 ns	15 ns	15 ns	12 ns
I/O type	COMMON	COMMON	COMMON	COMMON	COMMON	COMMON	COMMON
JESD-30 code	R-PDSO-G32	R-PDSO-G32	R-PDSO-G32	R-PDSO-J32	R-PDSO-G32	R-PDSO-G32	R-PBGA-B48
JESD-609 code	e0	e3	e0	e0	e3	e0	e0
length	11.8 mm	11.8 mm	20.95 mm	20.955 mm	20.95 mm	11.8 mm	8 mm
memory density	1048576 bit	1048576 bit	1048576 bit	1048576 bit	1048576 bit	1048576 bi	1048576 bi
Memory IC Type	STANDARD SRAM	STANDARD SRAM	STANDARD SRAM	STANDARD SRAM	STANDARD SRAM	STANDARD SRAM	STANDARD SRAM
memory width	8	8	8	8	8	8	8
Humidity sensitivity level	3	3	3	3	3	3	3
Number of functions	1	1	1	1	1	1	1
Number of terminals	32	32	32	32	32	32	48
word count	131072 words	131072 words	131072 words	131072 words	131072 words	131072 words	131072 words
character code	128000	128000	128000	128000	128000	128000	128000
Operating mode	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS
Maximum operating temperature	85 °C	125 °C	125 °C	85 °C	125 °C	125 °C	85 °C
Minimum operating temperature	-40 °C	-40 °C	-40 °C	-40 °C	-40 °C	-40 °C	-40 °C
organize	128KX8	128KX8	128KX8	128KX8	128KX8	128KX8	128KX8
Output characteristics	3-STATE	3-STATE	3-STATE	3-STATE	3-STATE	3-STATE	3-STATE
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
encapsulated code	LSSOP	LSSOP	TSOP2	SOJ	TSOP2	LSSOP	TFBGA
Encapsulate equivalent code	TSSOP32,.56,20	TSSOP32,.56,20	TSOP32,.46	SOJ32,.34	TSOP32,.46	TSSOP32,.56,20	BGA48,6X8,30
Package shape	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR
Package form	SMALL OUTLINE, LOW PROFILE, SHRINK PITCH	SMALL OUTLINE, LOW PROFILE, SHRINK PITCH	SMALL OUTLINE, THIN PROFILE	SMALL OUTLINE	SMALL OUTLINE, THIN PROFILE	SMALL OUTLINE, LOW PROFILE, SHRINK PITCH	GRID ARRAY, THIN PROFILE, FINE PITCH
Parallel/Serial	PARALLEL	PARALLEL	PARALLEL	PARALLEL	PARALLEL	PARALLEL	PARALLEL
Peak Reflow Temperature (Celsius)	NOT SPECIFIED	260	NOT SPECIFIED	NOT SPECIFIED	260	NOT SPECIFIED	NOT SPECIFIED
power supply	3.3 V	2.7/3.3 V	2.7/3.3 V	3.3 V	2.7/3.3 V	2.7/3.3 V	3.3 V
Certification status	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified
Maximum seat height	1.25 mm	1.25 mm	1.2 mm	3.56 mm	1.2 mm	1.25 mm	1.2 mm
Maximum standby current	0.00005 A	0.000075 A	0.000075 A	0.00005 A	0.000075 A	0.000075 A	0.00005 A
Minimum standby current	1.8 V	1.8 V	1.8 V	1.8 V	1.8 V	1.8 V	1.8 V
Maximum slew rate	0.045 mA	0.05 mA	0.05 mA	0.045 mA	0.05 mA	0.05 mA	0.045 mA
Maximum supply voltage (Vsup)	3.63 V	3.6 V	3.6 V	3.63 V	3.6 V	3.6 V	3.63 V
Minimum supply voltage (Vsup)	2.97 V	2.5 V	2.5 V	2.97 V	2.5 V	2.5 V	2.97 V
surface mount	YES	YES	YES	YES	YES	YES	YES
technology	CMOS	CMOS	CMOS	CMOS	CMOS	CMOS	CMOS
Temperature level	INDUSTRIAL	AUTOMOTIVE	AUTOMOTIVE	INDUSTRIAL	AUTOMOTIVE	AUTOMOTIVE	INDUSTRIAL
Terminal surface	Tin/Lead (Sn/Pb)	Matte Tin (Sn) - annealed	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Matte Tin (Sn) - annealed	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)
Terminal form	GULL WING	GULL WING	GULL WING	J BEND	GULL WING	GULL WING	BALL
Terminal pitch	0.5 mm	0.5 mm	1.27 mm	1.27 mm	1.27 mm	0.5 mm	0.75 mm
Terminal location	DUAL	DUAL	DUAL	DUAL	DUAL	DUAL	BOTTOM
Maximum time at peak reflow temperature	NOT SPECIFIED	40	NOT SPECIFIED	NOT SPECIFIED	40	NOT SPECIFIED	NOT SPECIFIED
width	8 mm	8 mm	10.16 mm	7.62 mm	10.16 mm	8 mm	6 mm
Maker	Integrated Silicon Solution ( ISSI )	-	-	Integrated Silicon Solution ( ISSI )	Integrated Silicon Solution ( ISSI )	Integrated Silicon Solution ( ISSI )	Integrated Silicon Solution ( ISSI )
Filter level	-	AEC-Q100	AEC-Q100	-	AEC-Q100	AEC-Q100	-

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