KSV2114A datasheet, PDF - EEWORLD Datasheet

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KSV2114A: DescriptionVariable Capacitance Diode, 82pF C(T), 30V, Silicon, Abrupt, DO-7, GLASS PACKAGE-2; CategoryDiscrete semiconductor diode; File Size7KB，1 Pages; ManufacturerCobham PLC

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KSV2114A Overview

Variable Capacitance Diode, 82pF C(T), 30V, Silicon, Abrupt, DO-7, GLASS PACKAGE-2

KSV2114A Parametric

Parameter Name	Attribute value
Maker	Cobham PLC
package instruction	GLASS PACKAGE-2
Reach Compliance Code	unknown
ECCN code	EAR99
Minimum breakdown voltage	30 V
Shell connection	ISOLATED
Configuration	SINGLE
Diode Capacitance Tolerance	5%
Minimum diode capacitance ratio	2.6
Nominal diode capacitance	82 pF
Diode component materials	SILICON
Diode type	VARIABLE CAPACITANCE DIODE
JEDEC-95 code	DO-7
JESD-30 code	O-LALF-W2
JESD-609 code	e0
Number of components	1
Number of terminals	2
Package body material	GLASS
Package shape	ROUND
Package form	LONG FORM
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
Maximum power dissipation	0.4 W
Certification status	Not Qualified
minimum quality factor	100
Maximum repetitive peak reverse voltage	30 V
surface mount	NO
Terminal surface	TIN LEAD
Terminal form	WIRE
Terminal location	AXIAL
Maximum time at peak reflow temperature	NOT SPECIFIED
Varactor Diode Classification	ABRUPT

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K

NOX

S

EMICONDUCTOR,

I

NC.

GLASS - LEADED

GENERAL PURPOSE ABRUPT VARACTOR DIODES

KSV2101 - KSV2115

TYPE

NUMBER

KSV2101

KSV2102

KSV2103

KSV2104

KSV2105

KSV2106

KSV2107

KSV2108

KSV2109

KSV2110

KSV2111

KSV2112

KSV2113

KSV2114

KSV2115

CAPACITANCE

@ - 4 Vdc

f = 1 MHz (pF)

6.8

8.2

10.0

12.0

15.0

18.0

22.0

27.0

33.0

39.0

47.0

56.0

68.0

82.0

100.0

MIN QUALITY FACTOR

Q @ - 4 Vdc

f = 50 MHz

450

400

350

300

200

150

100

CAPACITANCE RATIO

f = 1 MHz C•2V / C•30V

MIN

MAX

2.5

3.2

2.5

3.2

2.5

3.2

2.5

3.2

2.5

3.2

2.5

3.2

2.5

3.2

2.5

3.2

2.5

3.2

2.5

3.2

2.5

3.2

2.6

3.3

2.6

3.3

2.6

3.3

2.6

3.3

Package Style

DC Power Dissipation

Reverse Breakdown Voltage

Max Reverse Current (I

R

)

Operating Temperature (Topr)

Storage Temperature (Tstg)

Capacitance Tolerance:

@ Ta = 25°C

@ 10µA

@ Ta = 25° C

Standard Device

Suffix A

DO-7

400 mW

30 V Min

0.1 µA @ 25 Vdc

-65 to + 175° C

-65 to + 200° C

±10%

±5%

P.O. BOX 609 • ROCKPORT, MAINE 04856

• 207•236•6076

•

FAX 207•236•9558

-10-

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