KV1360NT datasheet, PDF - EEWORLD Datasheet

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KV1360NT: DescriptionVariable Capacitance Diode, Ultra High Frequency, 92pF C(T), 18V, Silicon, TO-92; CategoryDiscrete semiconductor diode; File Size96KB，1 Pages; ManufacturerAKM [Asahi Kasei Microsystems]

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KV1360NT Overview

Variable Capacitance Diode, Ultra High Frequency, 92pF C(T), 18V, Silicon, TO-92

KV1360NT Parametric

Parameter Name	Attribute value
Is it lead-free?	Contains lead
Is it Rohs certified?	incompatible
Maker	AKM [Asahi Kasei Microsystems]
package instruction	O-PBCY-T3
Reach Compliance Code	unknown
ECCN code	EAR99
Minimum breakdown voltage	18 V
Configuration	COMMON CATHODE, 2 ELEMENTS
Diode Capacitance Tolerance	6.46%
Minimum diode capacitance ratio	4.7
Nominal diode capacitance	92 pF
Diode component materials	SILICON
Diode type	VARIABLE CAPACITANCE DIODE
frequency band	ULTRA HIGH FREQUENCY
JEDEC-95 code	TO-92
JESD-30 code	O-PBCY-T3
Number of components	2
Number of terminals	3
Package body material	PLASTIC/EPOXY
Package shape	ROUND
Package form	CYLINDRICAL
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
Maximum power dissipation	0.1 W
Certification status	Not Qualified
surface mount	NO
Terminal form	THROUGH-HOLE
Terminal location	BOTTOM
Maximum time at peak reflow temperature	NOT SPECIFIED

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KV1360NT Related Products

	KV1360NT	KV1310NT	KV1320N	KV1350NT
Description	Variable Capacitance Diode, Ultra High Frequency, 92pF C(T), 18V, Silicon, TO-92	Variable Capacitance Diode, Ultra High Frequency, 18V, Silicon, TO-92	Variable Capacitance Diode, 30V, Silicon, TO-92	Variable Capacitance Diode, Ultra High Frequency, 62.5pF C(T), 18V, Silicon, TO-92
Is it lead-free?	Contains lead	Contains lead	Contains lead	Contains lead
Is it Rohs certified?	incompatible	incompatible	incompatible	incompatible
Maker	AKM [Asahi Kasei Microsystems]	AKM [Asahi Kasei Microsystems]	AKM [Asahi Kasei Microsystems]	AKM [Asahi Kasei Microsystems]
package instruction	O-PBCY-T3	O-PBCY-T3	O-PBCY-T3	O-PBCY-T3
Reach Compliance Code	unknown	unknown	unknown	unknown
ECCN code	EAR99	EAR99	EAR99	EAR99
Minimum breakdown voltage	18 V	18 V	30 V	18 V
Configuration	COMMON CATHODE, 2 ELEMENTS	COMMON CATHODE, 2 ELEMENTS	COMMON CATHODE, 2 ELEMENTS	COMMON CATHODE, 2 ELEMENTS
Diode Capacitance Tolerance	6.46%	5.66%	7.41%	5.4%
Minimum diode capacitance ratio	4.7	2.2	2.57	4.6
Diode component materials	SILICON	SILICON	SILICON	SILICON
Diode type	VARIABLE CAPACITANCE DIODE	VARIABLE CAPACITANCE DIODE	VARIABLE CAPACITANCE DIODE	VARIABLE CAPACITANCE DIODE
JEDEC-95 code	TO-92	TO-92	TO-92	TO-92
JESD-30 code	O-PBCY-T3	O-PBCY-T3	O-PBCY-T3	O-PBCY-T3
Number of components	2	2	2	2
Number of terminals	3	3	3	3
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
Package shape	ROUND	ROUND	ROUND	ROUND
Package form	CYLINDRICAL	CYLINDRICAL	CYLINDRICAL	CYLINDRICAL
Peak Reflow Temperature (Celsius)	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED
Certification status	Not Qualified	Not Qualified	Not Qualified	Not Qualified
surface mount	NO	NO	NO	NO
Terminal form	THROUGH-HOLE	THROUGH-HOLE	THROUGH-HOLE	THROUGH-HOLE
Terminal location	BOTTOM	BOTTOM	BOTTOM	BOTTOM
Maximum time at peak reflow temperature	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED
frequency band	ULTRA HIGH FREQUENCY	ULTRA HIGH FREQUENCY	-	ULTRA HIGH FREQUENCY
Maximum power dissipation	0.1 W	0.1 W	-	0.1 W

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