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KV1870STR

Description
Variable Capacitance Diode, 70pF C(T), 16V, Silicon, SOT-23, 3 PIN
CategoryDiscrete semiconductor    diode   
File Size127KB,2 Pages
ManufacturerAKM [Asahi Kasei Microsystems]
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KV1870STR Overview

Variable Capacitance Diode, 70pF C(T), 16V, Silicon, SOT-23, 3 PIN

KV1870STR Parametric

Parameter NameAttribute value
Is it lead-free?Contains lead
Is it Rohs certified?incompatible
MakerAKM [Asahi Kasei Microsystems]
Parts packaging codeSOT-23
package instructionR-PDSO-G3
Contacts3
Reach Compliance Codeunknown
ECCN codeEAR99
Minimum breakdown voltage16 V
ConfigurationCOMMON CATHODE, 2 ELEMENTS
Diode Capacitance Tolerance6%
Minimum diode capacitance ratio5
Nominal diode capacitance70 pF
Diode component materialsSILICON
Diode typeVARIABLE CAPACITANCE DIODE
JESD-30 codeR-PDSO-G3
Number of components2
Number of terminals3
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Maximum power dissipation0.1 W
Certification statusNot Qualified
surface mountYES
Terminal formGULL WING
Terminal locationDUAL
Maximum time at peak reflow temperatureNOT SPECIFIED

KV1870STR Preview

Variable capacitance diode for communications equipment
通信機器用電圧可変容量ダイオード
KV1870R/S
FEATURES
Very Low Operating Voltage: V
OP
=1.0 to 4.5V
Excellent Linearity of The CV Curve
Extra Large Capacitance Ratio: A=5.00 to
Extra Low Series Resitancce: R
S
=0.43Ω(typ.)
½電圧動½:
V
OP
=1.0 to 4.5V
CV特性の優れた直線性
極めて大きな容量変化比:
A=5.00~
極めて½い直列抵抗:
R
S
=0.43Ω(typ.)
CLASSIFICATION
Rank
C
C1
MIN
MAX
1
65.80
69.25
2
68.27
71.72
3
70.74
74.20
PACKAGE OUTLINE
Part name
KV1870R
KV1870S
Package
SOT23C-3
SOT23-3
Marking Pin configulation
C7
C7
ORDERING INFORMATION
KV1870RTR…Storage direction: TL(Left type)
KV1870STR…Storage direction: TL(Left type)
* Part name + Storage direction
ABSOLUTE MAXIMUM RATINGS
Parameter
Reverse Voltage
Forward Current
Power Dissipation
Storage Temperature Range
Operating Temperature Range
項目
Symbol
記号
V
R
逆方向電圧
I
F
順方向電流
P
D
許容消費電力
T
STG
保存温度範囲
T
OP
動½温度範囲
Rating
定格
18
50
100
-55 to 150
-55 to +85
Unit
単½
Remarks
備考
V
mA
mW
°C
°C
ELECTRICAL CHARCTERISTICS
Parameter
Symbol
Units
Value
規格
項目
記号
単½
MIN
TYP
MAX
V
R
16
V
Reverse Voltage
逆方向電圧
I
R
50.0
nA
Reverse Current
逆方向電流
C
1
65.80
70.00
74.20
pF
Diode Capacitance
容量値
C
4.5
12.00
13.40
14.80
pF
R
S
0.43
0.50
Series Resistance
直列抵抗
A
5.00
Capacitance Ratio
容量変化比
* Capacitance measured in parallel connections.
容量値は、Back
to Back Typeの2つのダイオードの平均値です。
* Diode Capactance measured with Agilent 4279A or equivalent instruments ( at OSC level 20±5mVrms )
容量測定器は、Agilent
4279A又は相½品。OSCレベル 20±5mVrms。
* Resistance meter is Agilent 4291B or equivalent instruments.
直列抵抗測定器は、Agilent
4291B又は相½品。
T
A
=25°C
Conditions
条件
I
R
=10µA
V
R
=10V
V
R
=1V, f=1MHz
V
R
=4.5V, f=1MHz
V
R
=1.5V, f=100MHz
C
1
/C
5
2003 FALL
KV1870R/S
SEMICONDUCTOR SELECTION GUIDE
DISCRETE DEVICES
半導½セレクションガイド
個別半導½
TYPICAL PREFORAMNCE CHARACTERISTICS
Capacitance versus Reverse Voltage
逆方向電圧対容量
f=1MHz, T
A
=25°C
200
Reverse Current versus Reverse Voltage
逆方向電圧対逆電流
T
A
=+25 / +55 / +85°C
100p
T
A
=+85°C
I
R
, Reverse Current(A)
C, Capacitance(pF)
10p
T
A
=+55°C
1p
T
A
=+25°C
10
0.0
1.0
2.0
3.0
4.0
V
R
, Reverse Voltage(V)
5.0
100f
0.0
2.0
4.0 6.0 8.0 10.0 12.0 14.0 16.0
V
R
, Reverse Voltage(V)
Q versus Reverse Voltage
逆方向電圧対Q
1000
f=50MHz
T
A
=25°C
f=70MHz
f=100MHz
Series Resistance versus Frequency
周波数対直列抵抗
V
R
=1.5V, T
A
=25°C
0.7
100
V
R
, Reverse Voltage(V)
0.1
50M
Q
10
0.0
1.0
2.0
3.0
4.0
V
R
, Reverse Voltage(V)
5.0
f, Frequency(Hz)
500M
C(T
A
)/C(25°C) versus Reverse Voltage
逆方向電圧対C(T
A
)/C(25°C)
f=1MHz T
A
=-55 to +85°C
1.08
1.06
1.04
C(T
A
)/C(25°C)
1.02
1.00
T
A
=+85°C
T
A
=+55°C
T
A
=+25°C
T
A
=-15°C
T
A
=-55°C
Capacitance Temperature Coefficient versus Reverse Voltage
f=1MHz, T
A
=25°C
逆方向電圧対温度係数
∆C/∆T
A
, Temperature Coefficient(ppm/°C)
1000
0.98
0.96
0.94
0.92
0.0
1.0
2.0
3.0
4.0
V
R
, Reverse Voltage(V)
5.0
100
0.0
1.0
2.0
3.0
4.0
V
R
, Reverse Voltage(V)
5.0
2003 FALL

KV1870STR Related Products

KV1870STR KV1870RTR
Description Variable Capacitance Diode, 70pF C(T), 16V, Silicon, SOT-23, 3 PIN Variable Capacitance Diode, 70pF C(T), 16V, Silicon, SOT-23C, 3 PIN
Is it lead-free? Contains lead Contains lead
Is it Rohs certified? incompatible incompatible
Maker AKM [Asahi Kasei Microsystems] AKM [Asahi Kasei Microsystems]
Parts packaging code SOT-23 SOT-23
package instruction R-PDSO-G3 R-PDSO-G3
Contacts 3 3
Reach Compliance Code unknown unknown
ECCN code EAR99 EAR99
Minimum breakdown voltage 16 V 16 V
Configuration COMMON CATHODE, 2 ELEMENTS COMMON CATHODE, 2 ELEMENTS
Diode Capacitance Tolerance 6% 6%
Minimum diode capacitance ratio 5 5
Nominal diode capacitance 70 pF 70 pF
Diode component materials SILICON SILICON
Diode type VARIABLE CAPACITANCE DIODE VARIABLE CAPACITANCE DIODE
JESD-30 code R-PDSO-G3 R-PDSO-G3
Number of components 2 2
Number of terminals 3 3
Package body material PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR RECTANGULAR
Package form SMALL OUTLINE SMALL OUTLINE
Peak Reflow Temperature (Celsius) NOT SPECIFIED NOT SPECIFIED
Maximum power dissipation 0.1 W 0.1 W
Certification status Not Qualified Not Qualified
surface mount YES YES
Terminal form GULL WING GULL WING
Terminal location DUAL DUAL
Maximum time at peak reflow temperature NOT SPECIFIED NOT SPECIFIED

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