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SA6.0AG

Description
Trans Voltage Suppressor Diode, 500W, Unidirectional, 1 Element, Silicon, DO-15, DO-15, 2 PIN
CategoryDiscrete semiconductor    diode   
File Size58KB,4 Pages
ManufacturerFairchild
Websitehttp://www.fairchildsemi.com/
Download Datasheet Parametric View All

SA6.0AG Overview

Trans Voltage Suppressor Diode, 500W, Unidirectional, 1 Element, Silicon, DO-15, DO-15, 2 PIN

SA6.0AG Parametric

Parameter NameAttribute value
MakerFairchild
package instructionO-PALF-W2
Reach Compliance Codeunknown
ECCN codeEAR99
Maximum breakdown voltage7.37 V
Minimum breakdown voltage6.67 V
Shell connectionISOLATED
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeTRANS VOLTAGE SUPPRESSOR DIODE
JEDEC-95 codeDO-15
JESD-30 codeO-PALF-W2
Maximum non-repetitive peak reverse power dissipation500 W
Number of components1
Number of terminals2
Package body materialPLASTIC/EPOXY
Package shapeROUND
Package formLONG FORM
polarityUNIDIRECTIONAL
Maximum power dissipation1 W
surface mountNO
technologyAVALANCHE
Terminal formWIRE
Terminal locationAXIAL

SA6.0AG Preview

SA5.0(C)A - SA170(C)A
Transient Voltage Suppressors
SA5.0(C)A - SA170(C)A
Features
Glass passivated junction.
500W Peak Pulse Power capability on
10/1000
µs
waveform.
Excellent clamping capability.
Low incremental surge resistance.
Fast response time; typically less
than 1.0 ps from 0 volts to BV for
unidirectional and 5.0 ns for
bidirectional.
Typical I
R
less than 1.0
µA
above 10V.
DO-15
COLOR BAND DENOTES CATHODE
ON UNIDIRECTIONAL DEVICES ONLY. NO
COLOR BAND ON BIDIRECTIONAL DEVICES.
DEVICES FOR BIPOLAR APPLICATIONS
- Bidirectional types use CA suffix.
- Electrical Characteristics apply in both directions.
500 Watt Transient Voltage Suppressors
Absolute Maximum Ratings*
Symbol
P
PPM
I
PPM
P
D
I
FSM
T
stg
T
J
T
A
= 25°C unless otherwise noted
Parameter
Peak Pulse Power Dissipation on 10/1000
µs
waveform
Peak Pulse Current on 10/1000
µs
waveform
Power Dissipation
.375 " lead length @ T
A
= 75°C
Non-repetitive Peak Forward Surge Current
superimposed on rated load (JEDEC method)
Storage Temperature Range
Operating Junction Temperature
Value
500
see table
1.0
(Note 1)
Units
W
A
W
A
°C
°C
70
-65 to +175
+ 175
*
These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
Note 1:
Measured on 8.3 ms single half-sine wave or equivalent square wave; Duty cycle = 4 pulses per minute maximum.
2001
Fairchild Semiconductor Corporation
SA5.0(C)A - SA170(C)A, Rev. C
SA5.0(C)A - SA170(C)A
Transient Voltage Suppressors
(continued)
Electrical Characteristics
Uni-directional
Bi-directional (C)
Device
SA5.0(C)A
SA6.0(C)A
SA6.5(C)A
SA7.0(C)A
SA7.5(C)A
SA8.0(C)A
SA8.5(C)A
SA9.0(C)A
SA10(C)A
SA11(C)A
SA12(C)A
SA13(C)A
SA14(C)A
SA15(C)A
SA16(C)A
SA17(C)A
SA18(C)A
SA20(C)A
SA22(C)A
SA24(C)A
SA26(C)A
SA28(C)A
SA30(C)A
SA33(C)A
SA36(C)A
SA40(C)A
SA43(C)A
SA45(C)A
SA48(C)A
SA51(C)A
SA54(C)A
SA58(C)A
SA60(C)A
SA64(C)A
SA70(C)A
SA75(C)A
SA78(C)A
SA85(C)A
SA90(C)A
SA100(C)A
SA110(C)A
SA120(C)A
SA130(C)A
SA150(C)A
SA160(C)A
SA170(C)A
Reverse
Stand-off Voltage
V
RWM
(V)
5.0
6.0
6.5
7.0
7.5
8.0
8.5
9.0
10
11
12
13
14
15
16
17
18
20
22
24
26
28
30
33
36
40
43
45
48
51
54
58
60
64
70
75
78
85
90
100
110
120
130
150
160
170
T
A
= 25°C unless otherwise noted
Breakdown Voltage
V
BR
(V)
min
6.40
6.67
7.22
7.78
8.33
8.89
9.44
10.0
11.1
12.2
13.3
14.4
15.6
16.7
17.8
18.9
20.0
22.2
24.4
26.7
28.9
31.1
33.3
36.7
40.0
44.4
47.8
50.0
53.3
56.7
60.0
64.4
66.7
71.1
77.8
83.3
86.7
94.4
100.0
111.0
122.0
133.0
144.0
167.0
178.0
189.0
max
7.00
7.37
7.98
8.60
9.21
9.83
10.4
11.1
12.3
13.5
14.7
15.9
17.2
18.5
19.7
20.9
22.1
24.5
26.9
29.5
31.9
34.4
36.8
40.6
44.2
49.1
52.8
55.3
58.9
62.7
66.3
71.2
73.7
78.6
86.0
92.1
95.8
104.0
111.0
123.0
135.0
147.0
159.0
185.0
197.0
209.0
Test
Current
I
T
(mA)
10
10
10
10
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
Clamping Voltage Peak Pulse
@I
PPM
Current
V
C
(V)
I
PPM
(A)
9.2
10.3
11.2
12.0
12.9
13.6
14.4
15.4
17.0
18.2
19.9
21.5
23.2
24.4
26.0
27.6
29.2
32.4
35.5
38.9
42.1
45.4
48.4
53.3
58.1
64.5
69.4
72.7
77.4
82.4
87.1
93.6
96.8
103.0
113.0
121.0
126.0
137.0
146.0
162.0
177.0
193.0
209.0
243.0
259.0
275.0
54.3
48.5
44.7
41.7
38.8
36.7
34.7
32.5
29.4
27.4
25.1
23.2
21.5
20.6
19.2
18.1
17.2
15.4
14.1
12.8
11.9
11.0
10.3
9.4
8.6
7.8
7.2
6.9
6.5
6.1
5.7
5.3
5.2
4.9
4.4
4.1
4.0
3.6
3.4
3.1
2.8
2.7
2.4
2.1
1.9
1.8
Reverse
Leakage V
RWM
I
R
(uA)*
600
600
400
150
50
25
10
5
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
* For bidirectional parts with V
RWM
<10V, the I
R
max limit is doubled.
SA5.0(C)A - SA170(C)A, Rev. C
SA5.0(C)A - SA170(C)A
Transient Voltage Suppressors
(continued)
Typical Characteristics
100
100
T
A
= 25
º
C
75
Pulse Power [%]
Pulse Power [kW]
10
50
1
25
0.1
0.0001
0
0.001
0.01
0.1
Pulse Width [ms]
1
10
0
25
50
75
100 125 150
Ambient Temperature [ºC]
175
200
Figure 1. Peak Pulse Power Rating Curve
Figure 2. Pulse Derating Curve
150
tf = 10µsec
µ
Total Capacitance, C
T
[pF]
Peak Pulse Current [%]
100
Peak Value
Ippm
T
A
= 25
º
C
Pulse Width (td) is Defined
as the Point Where the Peak
Current Decays to 50% of Ipp
6000
4000
2000
1000
500
200
100
50
20
4
10
1
Measured at
Stand-Off
Voltage (V mw)
T
A
= 25
º
C
f = 1.0 MHz
Visg = 50m Vp-p
Measured at
Zero Bias
Half Value-Ipp
2
50
10/1000µsec Waveform
µ
as Defined by R.E.A.
td
e-kt
0
0
1
2
Time [ms]
3
5
10
50
Reverse Voltage, V
R
[V]
100
200
Figure 3. Pulse Waveform
Figure 4. Total Capacitance - Unidirectional
Peak Forward Surge Current, I
FSM
[A]
1.6
1.4
Power Dissipation [W]
1.2
1
0.8
0.6
0.4
0.2
0
0
25
50
75
100 125 150
Lead Temperature [ºC]
175
200
100
T
A
= T
A
max
8.3ms Single Half Sine-Wave
JEDEC Method
50
20
10
1
2
Figure 5. Steady State Power Derating Curve
5
10
20
Number of Cycles at 60Hz
50
100
Figure 6. Non-Repetitive Surge Current
SA5.0(C)A - SA170(C)A, Rev. C
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is
not intended to be an exhaustive list of all such trademarks.
ACEx™
Bottomless™
CoolFET™
CROSSVOLT™
DenseTrench™
DOME™
EcoSPARK™
E
2
CMOS
TM
EnSigna
TM
FACT™
FACT Quiet Series™
DISCLAIMER
FAST
®
FASTr™
FRFET™
GlobalOptoisolator™
GTO™
HiSeC™
ISOPLANAR™
LittleFET™
MicroFET™
MicroPak™
MICROWIRE™
OPTOLOGIC™
OPTOPLANAR™
PACMAN™
POP™
Power247™
PowerTrench
®
QFET™
QS™
QT Optoelectronics™
Quiet Series™
SILENT SWITCHER
®
SMART START™
STAR*POWER™
Stealth™
SuperSOT™-3
SuperSOT™-6
SuperSOT™-8
SyncFET™
TinyLogic™
TruTranslation™
UHC™
UltraFET
®
VCX™
STAR*POWER is used under license
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER
NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD
DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT
OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT
RIGHTS, NOR THE RIGHTS OF OTHERS.
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used herein:
1. Life support devices or systems are devices or
2. A critical component is any component of a life
systems which, (a) are intended for surgical implant into
support device or system whose failure to perform can
the body, or (b) support or sustain life, or (c) whose
be reasonably expected to cause the failure of the life
failure to perform when properly used in accordance
support device or system, or to affect its safety or
with instructions for use provided in the labeling, can be
effectiveness.
reasonably expected to result in significant injury to the
user.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Advance Information
Product Status
Formative or
In Design
Definition
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
Preliminary
First Production
No Identification Needed
Full Production
Obsolete
Not In Production
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
Rev. H4
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